JPS51121274A - Semiconductor device and method of producing same - Google Patents

Semiconductor device and method of producing same

Info

Publication number
JPS51121274A
JPS51121274A JP51033686A JP3368676A JPS51121274A JP S51121274 A JPS51121274 A JP S51121274A JP 51033686 A JP51033686 A JP 51033686A JP 3368676 A JP3368676 A JP 3368676A JP S51121274 A JPS51121274 A JP S51121274A
Authority
JP
Japan
Prior art keywords
semiconductor device
producing same
producing
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51033686A
Other languages
English (en)
Japanese (ja)
Inventor
Ronarudo Kuritsuchi Jieemuzu
Chiyaaruzu Buraha Furankurin
Dagurasu Fuitsutsupato Maikeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS51121274A publication Critical patent/JPS51121274A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
JP51033686A 1975-03-28 1976-03-29 Semiconductor device and method of producing same Pending JPS51121274A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56342375A 1975-03-28 1975-03-28

Publications (1)

Publication Number Publication Date
JPS51121274A true JPS51121274A (en) 1976-10-23

Family

ID=24250436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51033686A Pending JPS51121274A (en) 1975-03-28 1976-03-29 Semiconductor device and method of producing same

Country Status (4)

Country Link
US (1) US4148049A (https=)
JP (1) JPS51121274A (https=)
DE (1) DE2613096A1 (https=)
FR (1) FR2305855A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279670A (en) * 1975-12-25 1977-07-04 Matsushita Electronics Corp Non-volatile memory element

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249191A (en) * 1978-04-21 1981-02-03 Mcdonnell Douglas Corporation Stripped nitride structure and process therefor
US4268328A (en) * 1978-04-21 1981-05-19 Mcdonnell Douglas Corporation Stripped nitride MOS/MNOS process
US4330930A (en) * 1980-02-12 1982-05-25 General Instrument Corp. Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process
US4903094A (en) * 1986-08-26 1990-02-20 General Electric Company Memory cell structure having radiation hardness
US5781882A (en) * 1995-09-14 1998-07-14 Motorola, Inc. Very low bit rate voice messaging system using asymmetric voice compression processing
US7382043B2 (en) * 2002-09-25 2008-06-03 Maxwell Technologies, Inc. Method and apparatus for shielding an integrated circuit from radiation
US7191516B2 (en) * 2003-07-16 2007-03-20 Maxwell Technologies, Inc. Method for shielding integrated circuit devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836894A (en) * 1974-01-22 1974-09-17 Westinghouse Electric Corp Mnos/sos random access memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279670A (en) * 1975-12-25 1977-07-04 Matsushita Electronics Corp Non-volatile memory element

Also Published As

Publication number Publication date
FR2305855A1 (fr) 1976-10-22
US4148049A (en) 1979-04-03
FR2305855B3 (https=) 1978-11-10
DE2613096A1 (de) 1976-10-14

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