FR2305855B3 - - Google Patents
Info
- Publication number
- FR2305855B3 FR2305855B3 FR7604967A FR7604967A FR2305855B3 FR 2305855 B3 FR2305855 B3 FR 2305855B3 FR 7604967 A FR7604967 A FR 7604967A FR 7604967 A FR7604967 A FR 7604967A FR 2305855 B3 FR2305855 B3 FR 2305855B3
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56342375A | 1975-03-28 | 1975-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2305855A1 FR2305855A1 (fr) | 1976-10-22 |
| FR2305855B3 true FR2305855B3 (https=) | 1978-11-10 |
Family
ID=24250436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7604967A Granted FR2305855A1 (fr) | 1975-03-28 | 1976-02-23 | Transistor mnos a drain-source protege vis-a-vis des radiations |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4148049A (https=) |
| JP (1) | JPS51121274A (https=) |
| DE (1) | DE2613096A1 (https=) |
| FR (1) | FR2305855A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5916425B2 (ja) * | 1975-12-25 | 1984-04-16 | 松下電子工業株式会社 | フキハツセイメモリソシ |
| US4249191A (en) * | 1978-04-21 | 1981-02-03 | Mcdonnell Douglas Corporation | Stripped nitride structure and process therefor |
| US4268328A (en) * | 1978-04-21 | 1981-05-19 | Mcdonnell Douglas Corporation | Stripped nitride MOS/MNOS process |
| US4330930A (en) * | 1980-02-12 | 1982-05-25 | General Instrument Corp. | Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process |
| US4903094A (en) * | 1986-08-26 | 1990-02-20 | General Electric Company | Memory cell structure having radiation hardness |
| US5781882A (en) * | 1995-09-14 | 1998-07-14 | Motorola, Inc. | Very low bit rate voice messaging system using asymmetric voice compression processing |
| US7382043B2 (en) * | 2002-09-25 | 2008-06-03 | Maxwell Technologies, Inc. | Method and apparatus for shielding an integrated circuit from radiation |
| US7191516B2 (en) * | 2003-07-16 | 2007-03-20 | Maxwell Technologies, Inc. | Method for shielding integrated circuit devices |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3836894A (en) * | 1974-01-22 | 1974-09-17 | Westinghouse Electric Corp | Mnos/sos random access memory |
-
1976
- 1976-02-23 FR FR7604967A patent/FR2305855A1/fr active Granted
- 1976-03-26 DE DE19762613096 patent/DE2613096A1/de active Pending
- 1976-03-29 JP JP51033686A patent/JPS51121274A/ja active Pending
-
1977
- 1977-02-04 US US05/765,484 patent/US4148049A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51121274A (en) | 1976-10-23 |
| FR2305855A1 (fr) | 1976-10-22 |
| US4148049A (en) | 1979-04-03 |
| DE2613096A1 (de) | 1976-10-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |