FR2305855A1 - Transistor mnos a drain-source protege vis-a-vis des radiations - Google Patents

Transistor mnos a drain-source protege vis-a-vis des radiations

Info

Publication number
FR2305855A1
FR2305855A1 FR7604967A FR7604967A FR2305855A1 FR 2305855 A1 FR2305855 A1 FR 2305855A1 FR 7604967 A FR7604967 A FR 7604967A FR 7604967 A FR7604967 A FR 7604967A FR 2305855 A1 FR2305855 A1 FR 2305855A1
Authority
FR
France
Prior art keywords
mnos
transistor
drain
protected against
against radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7604967A
Other languages
English (en)
French (fr)
Other versions
FR2305855B3 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2305855A1 publication Critical patent/FR2305855A1/fr
Application granted granted Critical
Publication of FR2305855B3 publication Critical patent/FR2305855B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
FR7604967A 1975-03-28 1976-02-23 Transistor mnos a drain-source protege vis-a-vis des radiations Granted FR2305855A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56342375A 1975-03-28 1975-03-28

Publications (2)

Publication Number Publication Date
FR2305855A1 true FR2305855A1 (fr) 1976-10-22
FR2305855B3 FR2305855B3 (https=) 1978-11-10

Family

ID=24250436

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7604967A Granted FR2305855A1 (fr) 1975-03-28 1976-02-23 Transistor mnos a drain-source protege vis-a-vis des radiations

Country Status (4)

Country Link
US (1) US4148049A (https=)
JP (1) JPS51121274A (https=)
DE (1) DE2613096A1 (https=)
FR (1) FR2305855A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475780A1 (fr) * 1980-02-12 1981-08-14 Gen Instrument Corp Dispositif semi-conducteur de memoire morte modifiable electriquement, realise par un procede de depot de vapeur chimique a basse pression

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916425B2 (ja) * 1975-12-25 1984-04-16 松下電子工業株式会社 フキハツセイメモリソシ
US4249191A (en) * 1978-04-21 1981-02-03 Mcdonnell Douglas Corporation Stripped nitride structure and process therefor
US4268328A (en) * 1978-04-21 1981-05-19 Mcdonnell Douglas Corporation Stripped nitride MOS/MNOS process
US4903094A (en) * 1986-08-26 1990-02-20 General Electric Company Memory cell structure having radiation hardness
US5781882A (en) * 1995-09-14 1998-07-14 Motorola, Inc. Very low bit rate voice messaging system using asymmetric voice compression processing
US7382043B2 (en) * 2002-09-25 2008-06-03 Maxwell Technologies, Inc. Method and apparatus for shielding an integrated circuit from radiation
US7191516B2 (en) * 2003-07-16 2007-03-20 Maxwell Technologies, Inc. Method for shielding integrated circuit devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836894A (en) * 1974-01-22 1974-09-17 Westinghouse Electric Corp Mnos/sos random access memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475780A1 (fr) * 1980-02-12 1981-08-14 Gen Instrument Corp Dispositif semi-conducteur de memoire morte modifiable electriquement, realise par un procede de depot de vapeur chimique a basse pression

Also Published As

Publication number Publication date
JPS51121274A (en) 1976-10-23
US4148049A (en) 1979-04-03
FR2305855B3 (https=) 1978-11-10
DE2613096A1 (de) 1976-10-14

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Legal Events

Date Code Title Description
ST Notification of lapse