FR2305855A1 - Transistor mnos a drain-source protege vis-a-vis des radiations - Google Patents
Transistor mnos a drain-source protege vis-a-vis des radiationsInfo
- Publication number
- FR2305855A1 FR2305855A1 FR7604967A FR7604967A FR2305855A1 FR 2305855 A1 FR2305855 A1 FR 2305855A1 FR 7604967 A FR7604967 A FR 7604967A FR 7604967 A FR7604967 A FR 7604967A FR 2305855 A1 FR2305855 A1 FR 2305855A1
- Authority
- FR
- France
- Prior art keywords
- mnos
- transistor
- drain
- protected against
- against radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56342375A | 1975-03-28 | 1975-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2305855A1 true FR2305855A1 (fr) | 1976-10-22 |
| FR2305855B3 FR2305855B3 (fr) | 1978-11-10 |
Family
ID=24250436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7604967A Granted FR2305855A1 (fr) | 1975-03-28 | 1976-02-23 | Transistor mnos a drain-source protege vis-a-vis des radiations |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4148049A (fr) |
| JP (1) | JPS51121274A (fr) |
| DE (1) | DE2613096A1 (fr) |
| FR (1) | FR2305855A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2475780A1 (fr) * | 1980-02-12 | 1981-08-14 | Gen Instrument Corp | Dispositif semi-conducteur de memoire morte modifiable electriquement, realise par un procede de depot de vapeur chimique a basse pression |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5916425B2 (ja) * | 1975-12-25 | 1984-04-16 | 松下電子工業株式会社 | フキハツセイメモリソシ |
| US4249191A (en) * | 1978-04-21 | 1981-02-03 | Mcdonnell Douglas Corporation | Stripped nitride structure and process therefor |
| US4268328A (en) * | 1978-04-21 | 1981-05-19 | Mcdonnell Douglas Corporation | Stripped nitride MOS/MNOS process |
| US4903094A (en) * | 1986-08-26 | 1990-02-20 | General Electric Company | Memory cell structure having radiation hardness |
| US5781882A (en) * | 1995-09-14 | 1998-07-14 | Motorola, Inc. | Very low bit rate voice messaging system using asymmetric voice compression processing |
| US7382043B2 (en) * | 2002-09-25 | 2008-06-03 | Maxwell Technologies, Inc. | Method and apparatus for shielding an integrated circuit from radiation |
| US7191516B2 (en) * | 2003-07-16 | 2007-03-20 | Maxwell Technologies, Inc. | Method for shielding integrated circuit devices |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3836894A (en) * | 1974-01-22 | 1974-09-17 | Westinghouse Electric Corp | Mnos/sos random access memory |
-
1976
- 1976-02-23 FR FR7604967A patent/FR2305855A1/fr active Granted
- 1976-03-26 DE DE19762613096 patent/DE2613096A1/de active Pending
- 1976-03-29 JP JP51033686A patent/JPS51121274A/ja active Pending
-
1977
- 1977-02-04 US US05/765,484 patent/US4148049A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2475780A1 (fr) * | 1980-02-12 | 1981-08-14 | Gen Instrument Corp | Dispositif semi-conducteur de memoire morte modifiable electriquement, realise par un procede de depot de vapeur chimique a basse pression |
Also Published As
| Publication number | Publication date |
|---|---|
| US4148049A (en) | 1979-04-03 |
| DE2613096A1 (de) | 1976-10-14 |
| JPS51121274A (en) | 1976-10-23 |
| FR2305855B3 (fr) | 1978-11-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |