DE2612460A1 - Halbleiteranordnung und verfahren zu ihrer herstellung - Google Patents

Halbleiteranordnung und verfahren zu ihrer herstellung

Info

Publication number
DE2612460A1
DE2612460A1 DE19762612460 DE2612460A DE2612460A1 DE 2612460 A1 DE2612460 A1 DE 2612460A1 DE 19762612460 DE19762612460 DE 19762612460 DE 2612460 A DE2612460 A DE 2612460A DE 2612460 A1 DE2612460 A1 DE 2612460A1
Authority
DE
Germany
Prior art keywords
zone
semiconductor
substrate
main surface
support layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19762612460
Other languages
German (de)
English (en)
Other versions
DE2612460C2 (enrdf_load_stackoverflow
Inventor
Peter Dipl Phys Dr Egelhaaf
Walter Dr Vits
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE19762612460 priority Critical patent/DE2612460A1/de
Publication of DE2612460A1 publication Critical patent/DE2612460A1/de
Application granted granted Critical
Publication of DE2612460C2 publication Critical patent/DE2612460C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)
DE19762612460 1976-03-24 1976-03-24 Halbleiteranordnung und verfahren zu ihrer herstellung Granted DE2612460A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19762612460 DE2612460A1 (de) 1976-03-24 1976-03-24 Halbleiteranordnung und verfahren zu ihrer herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762612460 DE2612460A1 (de) 1976-03-24 1976-03-24 Halbleiteranordnung und verfahren zu ihrer herstellung

Publications (2)

Publication Number Publication Date
DE2612460A1 true DE2612460A1 (de) 1977-10-13
DE2612460C2 DE2612460C2 (enrdf_load_stackoverflow) 1987-06-04

Family

ID=5973303

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762612460 Granted DE2612460A1 (de) 1976-03-24 1976-03-24 Halbleiteranordnung und verfahren zu ihrer herstellung

Country Status (1)

Country Link
DE (1) DE2612460A1 (enrdf_load_stackoverflow)

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Elektrochem. Techn. Bd. 2, (1964) Nr. 3-4, S. 114 u. 115 *
IEEE International Convention Record Part 3: Electron Devices/Microwave Theory and Techniques, New York, März 1963, S. 57-62 *
Radio Mentor, Bd. 10, (1963) S. 851-855 *

Also Published As

Publication number Publication date
DE2612460C2 (enrdf_load_stackoverflow) 1987-06-04

Similar Documents

Publication Publication Date Title
DE1439935A1 (de) Halbleitereinrichtung und Verfahren zu deren Herstellung
DE1764464C3 (de) Verfahren zur Herstellung eines lateralen Transistors
DE2749607C3 (de) Halbleiteranordnung und Verfahren zu deren Herstellung
DE4231310C1 (de) Verfahren zur Herstellung eines Bauelementes mit porösem Silizium
DE68928087T2 (de) Substratsstruktur für zusammengesetztes Halbleiterbauelement
DE2031333C3 (de) Verfahren zum Herstellen eines Halbleiterbauelementes
DE2849373C2 (enrdf_load_stackoverflow)
DE2509585C3 (de) Halbleiterbauelement mit mehreren epitaktischen Halbleiterschichten, insbesondere Halbleiterlaser oder Feldeffektransistor, sowie Verfahren zu dessen Herstellung
DE2133976B2 (de) Monolithisch integrierte Halbleiteranordnung
DE1965406A1 (de) Monolithische integrierte Schaltungen und Verfahren zu ihrer Herstellung
DE3012119C2 (de) Verfahren zum Herstellen eines Halbleiterbauelements
DE2643016A1 (de) Verfahren zur herstellung eines integrierten halbleiterkreises
DE1194062C2 (de) Verfahren zur Herstellung von Halbleiterkoerpern fuer Halbleiterbauelemente, insbesondere von Halbleiterkoerpern mit abgestufter Verunreinigungsverteilung
DE1764570B2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung mit zueinander komplementären NPN- und PNP-Transistoren
DE1814747C2 (de) Verfahren zum Herstellen von Feldefekttransistoren
DE2517252A1 (de) Halbleiterelement
DE2154386A1 (de) Verfahren zum Herstellen einer epitaktischen Schicht auf einem Halbleitersubstrat, bei dem das Selbstdotieren beim Aufwachsen der Schicht auf ein Mindestmaß verringert wird
DE1802849B2 (de) Verfahren zum herstellen einer monolithischen schaltung
DE2019450C3 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE68928913T2 (de) Halbleiterkommutator
DE2064084C2 (de) Planartransistor mit einer Schottky-Sperrschicht-Kontakt bildenden Metallkollektorschicht
DE2612460A1 (de) Halbleiteranordnung und verfahren zu ihrer herstellung
DE10125368A1 (de) Bauelement mit differentiellem negativem Widerstand und Verfahren zu dessen Herstellung
DE2732582C2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE69025916T2 (de) Herstellungsverfahren für eine halbleitervorrichtung

Legal Events

Date Code Title Description
OD Request for examination
8120 Willingness to grant licences paragraph 23
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee