DE2606743C3 - Als leistungsunabhängige Speichervorrichtung verwendbarer Feldeffekttransistor und Verfahren zu dessen Herstellung - Google Patents
Als leistungsunabhängige Speichervorrichtung verwendbarer Feldeffekttransistor und Verfahren zu dessen HerstellungInfo
- Publication number
- DE2606743C3 DE2606743C3 DE2606743A DE2606743A DE2606743C3 DE 2606743 C3 DE2606743 C3 DE 2606743C3 DE 2606743 A DE2606743 A DE 2606743A DE 2606743 A DE2606743 A DE 2606743A DE 2606743 C3 DE2606743 C3 DE 2606743C3
- Authority
- DE
- Germany
- Prior art keywords
- layer
- source
- impurity concentration
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title claims description 33
- 238000003860 storage Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910005091 Si3N Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 239000000370 acceptor Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 241000251730 Chondrichthyes Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having significant overlap between the lightly-doped extensions and the gate electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2163675A JPS5532032B2 (enrdf_load_stackoverflow) | 1975-02-20 | 1975-02-20 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2606743A1 DE2606743A1 (de) | 1976-09-02 |
| DE2606743B2 DE2606743B2 (de) | 1981-07-02 |
| DE2606743C3 true DE2606743C3 (de) | 1983-12-29 |
Family
ID=12060546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2606743A Expired DE2606743C3 (de) | 1975-02-20 | 1976-02-19 | Als leistungsunabhängige Speichervorrichtung verwendbarer Feldeffekttransistor und Verfahren zu dessen Herstellung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5532032B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1078517A (enrdf_load_stackoverflow) |
| DE (1) | DE2606743C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2301894A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1519068A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3064877D1 (en) * | 1979-04-12 | 1983-10-27 | Light Regulation Handel | Apparatus for transmitting information on an alternating current line |
| KR102545107B1 (ko) * | 2018-12-03 | 2023-06-20 | 현대자동차주식회사 | 친환경 자동차 및 그를 위한 강판 주행 제어 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3472712A (en) * | 1966-10-27 | 1969-10-14 | Hughes Aircraft Co | Field-effect device with insulated gate |
| US3434021A (en) * | 1967-01-13 | 1969-03-18 | Rca Corp | Insulated gate field effect transistor |
| US3534235A (en) * | 1967-04-17 | 1970-10-13 | Hughes Aircraft Co | Igfet with offset gate and biconductivity channel region |
| US3631312A (en) * | 1969-05-15 | 1971-12-28 | Nat Semiconductor Corp | High-voltage mos transistor method and apparatus |
| GB1289740A (enrdf_load_stackoverflow) * | 1969-12-24 | 1972-09-20 | ||
| JPS4960876A (enrdf_load_stackoverflow) * | 1972-10-16 | 1974-06-13 | ||
| JPS5024084A (enrdf_load_stackoverflow) * | 1973-07-05 | 1975-03-14 |
-
1975
- 1975-02-20 JP JP2163675A patent/JPS5532032B2/ja not_active Expired
-
1976
- 1976-02-17 CA CA245,948A patent/CA1078517A/en not_active Expired
- 1976-02-17 GB GB6218/76A patent/GB1519068A/en not_active Expired
- 1976-02-19 FR FR7604659A patent/FR2301894A1/fr active Granted
- 1976-02-19 DE DE2606743A patent/DE2606743C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2606743A1 (de) | 1976-09-02 |
| CA1078517A (en) | 1980-05-27 |
| FR2301894A1 (fr) | 1976-09-17 |
| JPS5532032B2 (enrdf_load_stackoverflow) | 1980-08-22 |
| GB1519068A (en) | 1978-07-26 |
| JPS5196289A (enrdf_load_stackoverflow) | 1976-08-24 |
| FR2301894B1 (enrdf_load_stackoverflow) | 1981-10-09 |
| DE2606743B2 (de) | 1981-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8263 | Opposition against grant of a patent | ||
| C3 | Grant after two publication steps (3rd publication) |