GB1519068A - Non-volatile memory device and method of making the same - Google Patents

Non-volatile memory device and method of making the same

Info

Publication number
GB1519068A
GB1519068A GB6218/76A GB621876A GB1519068A GB 1519068 A GB1519068 A GB 1519068A GB 6218/76 A GB6218/76 A GB 6218/76A GB 621876 A GB621876 A GB 621876A GB 1519068 A GB1519068 A GB 1519068A
Authority
GB
United Kingdom
Prior art keywords
oxide
layer
volatile memory
apertures
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6218/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1519068A publication Critical patent/GB1519068A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/601Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/69IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
GB6218/76A 1975-02-20 1976-02-17 Non-volatile memory device and method of making the same Expired GB1519068A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2163675A JPS5532032B2 (enrdf_load_stackoverflow) 1975-02-20 1975-02-20

Publications (1)

Publication Number Publication Date
GB1519068A true GB1519068A (en) 1978-07-26

Family

ID=12060546

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6218/76A Expired GB1519068A (en) 1975-02-20 1976-02-17 Non-volatile memory device and method of making the same

Country Status (5)

Country Link
JP (1) JPS5532032B2 (enrdf_load_stackoverflow)
CA (1) CA1078517A (enrdf_load_stackoverflow)
DE (1) DE2606743C3 (enrdf_load_stackoverflow)
FR (1) FR2301894A1 (enrdf_load_stackoverflow)
GB (1) GB1519068A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018334A1 (en) * 1979-04-12 1980-10-29 Handelsbolaget Light Regulation Apparatus for transmitting information on an alternating current line

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102545107B1 (ko) * 2018-12-03 2023-06-20 현대자동차주식회사 친환경 자동차 및 그를 위한 강판 주행 제어 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472712A (en) * 1966-10-27 1969-10-14 Hughes Aircraft Co Field-effect device with insulated gate
US3434021A (en) * 1967-01-13 1969-03-18 Rca Corp Insulated gate field effect transistor
US3534235A (en) * 1967-04-17 1970-10-13 Hughes Aircraft Co Igfet with offset gate and biconductivity channel region
US3631312A (en) * 1969-05-15 1971-12-28 Nat Semiconductor Corp High-voltage mos transistor method and apparatus
GB1289740A (enrdf_load_stackoverflow) * 1969-12-24 1972-09-20
JPS4960876A (enrdf_load_stackoverflow) * 1972-10-16 1974-06-13
JPS5024084A (enrdf_load_stackoverflow) * 1973-07-05 1975-03-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018334A1 (en) * 1979-04-12 1980-10-29 Handelsbolaget Light Regulation Apparatus for transmitting information on an alternating current line

Also Published As

Publication number Publication date
DE2606743A1 (de) 1976-09-02
CA1078517A (en) 1980-05-27
FR2301894A1 (fr) 1976-09-17
JPS5532032B2 (enrdf_load_stackoverflow) 1980-08-22
JPS5196289A (enrdf_load_stackoverflow) 1976-08-24
FR2301894B1 (enrdf_load_stackoverflow) 1981-10-09
DE2606743C3 (de) 1983-12-29
DE2606743B2 (de) 1981-07-02

Similar Documents

Publication Publication Date Title
US4125933A (en) IGFET Integrated circuit memory cell
US3455020A (en) Method of fabricating insulated-gate field-effect devices
JPS5457875A (en) Semiconductor nonvolatile memory device
GB1377123A (en) Charge coupled circuits
JPS5681968A (en) Manufacture of semiconductor device
US4011576A (en) Nonvolatile semiconductor memory devices
EP0561500A3 (en) Semiconductor device with rf deposited intrinsic buffer layer
GB1429604A (en) Non-volatile semiconductor memory device
GB1443718A (en) Control of -blooming- in charge-coupled image sensing arrays
US3697786A (en) Capacitively driven charge transfer devices
US4323910A (en) MNOS Memory transistor
JPS57109367A (en) Semiconductor memory device
JPS5649570A (en) Semiconductor memory and its manufacturing process
GB1519068A (en) Non-volatile memory device and method of making the same
US5329148A (en) Semiconductor device and preparing method therefor
JPS54156483A (en) Non-volatile semiconductor memory device
EP0166208B1 (en) Charge storage structure for nonvolatile memory
JPS5521102A (en) Semiconductor memory cell
JPS56108271A (en) Floating gate type non volatile semiconductor memory device
JPS5742169A (en) Production of semiconductor device
JPS5492180A (en) Manufacture of semiconductor device
JPS5522885A (en) Insulation gate type field effect semiconductor device
JPS57121271A (en) Field effect transistor
JPS54143076A (en) Semiconductor device and its manufacture
KR930005502B1 (ko) 메모리 셀 제조방법

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940217