FR2301894A1 - Memoire remanente et son procede de fabrication - Google Patents
Memoire remanente et son procede de fabricationInfo
- Publication number
- FR2301894A1 FR2301894A1 FR7604659A FR7604659A FR2301894A1 FR 2301894 A1 FR2301894 A1 FR 2301894A1 FR 7604659 A FR7604659 A FR 7604659A FR 7604659 A FR7604659 A FR 7604659A FR 2301894 A1 FR2301894 A1 FR 2301894A1
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- remanent memory
- remanent
- memory
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having significant overlap between the lightly-doped extensions and the gate electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2163675A JPS5532032B2 (enrdf_load_stackoverflow) | 1975-02-20 | 1975-02-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2301894A1 true FR2301894A1 (fr) | 1976-09-17 |
| FR2301894B1 FR2301894B1 (enrdf_load_stackoverflow) | 1981-10-09 |
Family
ID=12060546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7604659A Granted FR2301894A1 (fr) | 1975-02-20 | 1976-02-19 | Memoire remanente et son procede de fabrication |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5532032B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1078517A (enrdf_load_stackoverflow) |
| DE (1) | DE2606743C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2301894A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1519068A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0018334B1 (en) * | 1979-04-12 | 1983-09-21 | Handelsbolaget Light Regulation | Apparatus for transmitting information on an alternating current line |
| KR102545107B1 (ko) * | 2018-12-03 | 2023-06-20 | 현대자동차주식회사 | 친환경 자동차 및 그를 위한 강판 주행 제어 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3472712A (en) * | 1966-10-27 | 1969-10-14 | Hughes Aircraft Co | Field-effect device with insulated gate |
| US3434021A (en) * | 1967-01-13 | 1969-03-18 | Rca Corp | Insulated gate field effect transistor |
| US3534235A (en) * | 1967-04-17 | 1970-10-13 | Hughes Aircraft Co | Igfet with offset gate and biconductivity channel region |
| US3631312A (en) * | 1969-05-15 | 1971-12-28 | Nat Semiconductor Corp | High-voltage mos transistor method and apparatus |
| GB1289740A (enrdf_load_stackoverflow) * | 1969-12-24 | 1972-09-20 | ||
| JPS4960876A (enrdf_load_stackoverflow) * | 1972-10-16 | 1974-06-13 | ||
| JPS5024084A (enrdf_load_stackoverflow) * | 1973-07-05 | 1975-03-14 |
-
1975
- 1975-02-20 JP JP2163675A patent/JPS5532032B2/ja not_active Expired
-
1976
- 1976-02-17 GB GB6218/76A patent/GB1519068A/en not_active Expired
- 1976-02-17 CA CA245,948A patent/CA1078517A/en not_active Expired
- 1976-02-19 FR FR7604659A patent/FR2301894A1/fr active Granted
- 1976-02-19 DE DE2606743A patent/DE2606743C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2301894B1 (enrdf_load_stackoverflow) | 1981-10-09 |
| GB1519068A (en) | 1978-07-26 |
| DE2606743C3 (de) | 1983-12-29 |
| DE2606743A1 (de) | 1976-09-02 |
| DE2606743B2 (de) | 1981-07-02 |
| CA1078517A (en) | 1980-05-27 |
| JPS5532032B2 (enrdf_load_stackoverflow) | 1980-08-22 |
| JPS5196289A (enrdf_load_stackoverflow) | 1976-08-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |