GB1519068A - Non-volatile memory device and method of making the same - Google Patents

Non-volatile memory device and method of making the same

Info

Publication number
GB1519068A
GB1519068A GB621876A GB621876A GB1519068A GB 1519068 A GB1519068 A GB 1519068A GB 621876 A GB621876 A GB 621876A GB 621876 A GB621876 A GB 621876A GB 1519068 A GB1519068 A GB 1519068A
Authority
GB
United Kingdom
Prior art keywords
oxide
layer
volatile memory
apertures
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB621876A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1519068A publication Critical patent/GB1519068A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

1519068 Non-volatile memory elements MATSUSHITA ELECTRONICS CORP 17 Feb 1976 [20 Feb 1975] 6218/76 Heading H1K A non-volatile memory element comprises a semiconductor substrate of one conductivity type, with source and drain regions of the opposite type formed in one surface and defining between them a channel over which are disposed superposed layers of different insulating materials constituting a charge storage structure, the source and drain regions consisting of lightly doped portions which are at least partly overlapped by said films and more heavily doped portions which are not. The MNOS structure of Fig. 2 is produced by first diffusing boron from doped oxide through apertures in oxide layer 6, and then through smaller apertures within the first apertures to form P and P+ regions 11, 12 and 13, 14 respectively, then forming aperture 61 in the oxide layer and producing within it a 30- 100Š thick layer 3 of thermal oxide and a much thicker layer 4 of silicon nitride, and finally depositing and patterning an aluminium layer to form source, drain and gate electrodes 8, 9 and 7. Because of the light doping (10<SP>16-17</SP> atoms/cc.) of portions 12 and hence of the overlying oxide through which charging and discharging of the storage structure occur the device exhibits long term stability.
GB621876A 1975-02-20 1976-02-17 Non-volatile memory device and method of making the same Expired GB1519068A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2163675A JPS5532032B2 (en) 1975-02-20 1975-02-20

Publications (1)

Publication Number Publication Date
GB1519068A true GB1519068A (en) 1978-07-26

Family

ID=12060546

Family Applications (1)

Application Number Title Priority Date Filing Date
GB621876A Expired GB1519068A (en) 1975-02-20 1976-02-17 Non-volatile memory device and method of making the same

Country Status (5)

Country Link
JP (1) JPS5532032B2 (en)
CA (1) CA1078517A (en)
DE (1) DE2606743C3 (en)
FR (1) FR2301894A1 (en)
GB (1) GB1519068A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018334A1 (en) * 1979-04-12 1980-10-29 Handelsbolaget Light Regulation Apparatus for transmitting information on an alternating current line

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102545107B1 (en) * 2018-12-03 2023-06-20 현대자동차주식회사 Eco-friendly vehicle and method of hill descent control for the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472712A (en) * 1966-10-27 1969-10-14 Hughes Aircraft Co Field-effect device with insulated gate
US3434021A (en) * 1967-01-13 1969-03-18 Rca Corp Insulated gate field effect transistor
US3534235A (en) * 1967-04-17 1970-10-13 Hughes Aircraft Co Igfet with offset gate and biconductivity channel region
US3631312A (en) * 1969-05-15 1971-12-28 Nat Semiconductor Corp High-voltage mos transistor method and apparatus
GB1289740A (en) * 1969-12-24 1972-09-20
JPS4960876A (en) * 1972-10-16 1974-06-13
JPS5024084A (en) * 1973-07-05 1975-03-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018334A1 (en) * 1979-04-12 1980-10-29 Handelsbolaget Light Regulation Apparatus for transmitting information on an alternating current line

Also Published As

Publication number Publication date
FR2301894A1 (en) 1976-09-17
DE2606743C3 (en) 1983-12-29
CA1078517A (en) 1980-05-27
DE2606743A1 (en) 1976-09-02
JPS5532032B2 (en) 1980-08-22
DE2606743B2 (en) 1981-07-02
FR2301894B1 (en) 1981-10-09
JPS5196289A (en) 1976-08-24

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940217