DE2552430A1 - Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte halbleiteranordnung - Google Patents
Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte halbleiteranordnungInfo
- Publication number
- DE2552430A1 DE2552430A1 DE19752552430 DE2552430A DE2552430A1 DE 2552430 A1 DE2552430 A1 DE 2552430A1 DE 19752552430 DE19752552430 DE 19752552430 DE 2552430 A DE2552430 A DE 2552430A DE 2552430 A1 DE2552430 A1 DE 2552430A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- auxiliary layer
- parts
- auxiliary
- conductor pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010410 layer Substances 0.000 claims description 140
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 34
- 239000004020 conductor Substances 0.000 claims description 24
- 229910052763 palladium Inorganic materials 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 238000000992 sputter etching Methods 0.000 claims description 9
- 230000000873 masking effect Effects 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000242583 Scyphozoa Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7415841A NL7415841A (nl) | 1974-12-05 | 1974-12-05 | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting, vervaardigd volgens de werkwijze. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2552430A1 true DE2552430A1 (de) | 1976-06-10 |
Family
ID=19822593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752552430 Ceased DE2552430A1 (de) | 1974-12-05 | 1975-11-22 | Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte halbleiteranordnung |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS5182569A (en, 2012) |
| AU (1) | AU499832B2 (en, 2012) |
| CA (1) | CA1042114A (en, 2012) |
| CH (1) | CH595698A5 (en, 2012) |
| DE (1) | DE2552430A1 (en, 2012) |
| FR (1) | FR2293794A1 (en, 2012) |
| GB (1) | GB1525400A (en, 2012) |
| IT (1) | IT1051815B (en, 2012) |
| NL (1) | NL7415841A (en, 2012) |
| SE (1) | SE411813B (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2703473A1 (de) * | 1976-02-06 | 1977-08-11 | Ibm | Schichtstruktur aus isolierendem und leitfaehigem material und verfahren zu ihrer herstellung |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2535525A1 (fr) * | 1982-10-29 | 1984-05-04 | Western Electric Co | Procede de fabrication de circuits integres comportant des couches isolantes minces |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3642528A (en) * | 1968-06-05 | 1972-02-15 | Matsushita Electronics Corp | Semiconductor device and method of making same |
| JPS4918268A (en, 2012) * | 1972-06-09 | 1974-02-18 |
-
1974
- 1974-12-05 NL NL7415841A patent/NL7415841A/xx not_active Application Discontinuation
-
1975
- 1975-11-22 DE DE19752552430 patent/DE2552430A1/de not_active Ceased
- 1975-11-27 CA CA240,755A patent/CA1042114A/en not_active Expired
- 1975-12-02 CH CH1566375A patent/CH595698A5/xx not_active IP Right Cessation
- 1975-12-02 AU AU87152/75A patent/AU499832B2/en not_active Expired
- 1975-12-02 IT IT29937/75A patent/IT1051815B/it active
- 1975-12-02 SE SE7513565A patent/SE411813B/xx unknown
- 1975-12-02 GB GB49418/75A patent/GB1525400A/en not_active Expired
- 1975-12-04 JP JP50143433A patent/JPS5182569A/ja active Pending
- 1975-12-05 FR FR7537270A patent/FR2293794A1/fr active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2703473A1 (de) * | 1976-02-06 | 1977-08-11 | Ibm | Schichtstruktur aus isolierendem und leitfaehigem material und verfahren zu ihrer herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| SE7513565L (sv) | 1976-06-08 |
| NL7415841A (nl) | 1976-06-09 |
| IT1051815B (it) | 1981-05-20 |
| GB1525400A (en) | 1978-09-20 |
| JPS5182569A (en) | 1976-07-20 |
| SE411813B (sv) | 1980-02-04 |
| AU8715275A (en) | 1977-06-09 |
| AU499832B2 (en) | 1979-05-03 |
| CH595698A5 (en, 2012) | 1978-02-28 |
| CA1042114A (en) | 1978-11-07 |
| FR2293794B1 (en, 2012) | 1981-08-07 |
| FR2293794A1 (fr) | 1976-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8131 | Rejection |