DE2546650C2 - Verfahren zur Herstellung von Halbleiterbauelementen mit einem scheibenförmigen Halbleiterkörper - Google Patents

Verfahren zur Herstellung von Halbleiterbauelementen mit einem scheibenförmigen Halbleiterkörper

Info

Publication number
DE2546650C2
DE2546650C2 DE2546650A DE2546650A DE2546650C2 DE 2546650 C2 DE2546650 C2 DE 2546650C2 DE 2546650 A DE2546650 A DE 2546650A DE 2546650 A DE2546650 A DE 2546650A DE 2546650 C2 DE2546650 C2 DE 2546650C2
Authority
DE
Germany
Prior art keywords
disk
semiconductor body
shaped semiconductor
coating
depressions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2546650A
Other languages
German (de)
English (en)
Other versions
DE2546650A1 (de
Inventor
Yoshichika Ibaraki Osaka Kobayashi
Yoshio Takatsuki Osaka Ohkubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP49120912A external-priority patent/JPS5146867A/ja
Priority claimed from JP13413274A external-priority patent/JPS5419130B2/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of DE2546650A1 publication Critical patent/DE2546650A1/de
Application granted granted Critical
Publication of DE2546650C2 publication Critical patent/DE2546650C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials

Landscapes

  • Element Separation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DE2546650A 1974-10-18 1975-10-17 Verfahren zur Herstellung von Halbleiterbauelementen mit einem scheibenförmigen Halbleiterkörper Expired DE2546650C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP49120912A JPS5146867A (en) 1974-10-18 1974-10-18 Handotaisochino seizohoho
JP13413274A JPS5419130B2 (https=) 1974-11-20 1974-11-20

Publications (2)

Publication Number Publication Date
DE2546650A1 DE2546650A1 (de) 1976-04-29
DE2546650C2 true DE2546650C2 (de) 1984-03-29

Family

ID=26458400

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2546650A Expired DE2546650C2 (de) 1974-10-18 1975-10-17 Verfahren zur Herstellung von Halbleiterbauelementen mit einem scheibenförmigen Halbleiterkörper

Country Status (5)

Country Link
US (1) US4046595A (https=)
CA (1) CA1065497A (https=)
DE (1) DE2546650C2 (https=)
FR (1) FR2288393A1 (https=)
GB (1) GB1522630A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4810669A (en) * 1987-07-07 1989-03-07 Oki Electric Industry Co., Ltd. Method of fabricating a semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1564427B2 (de) * 1965-08-09 1971-11-11 Nippon Electric Co. Ltd., Tokio Verfahren zum herstellen eines doppeldiffusions halbleiter elementes
USRE28653E (en) 1968-04-23 1975-12-16 Method of fabricating semiconductor devices
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
US3746587A (en) * 1970-11-04 1973-07-17 Raytheon Co Method of making semiconductor diodes
US3748187A (en) * 1971-08-03 1973-07-24 Hughes Aircraft Co Self-registered doped layer for preventing field inversion in mis circuits
US3808058A (en) * 1972-08-17 1974-04-30 Bell Telephone Labor Inc Fabrication of mesa diode with channel guard

Also Published As

Publication number Publication date
CA1065497A (en) 1979-10-30
US4046595A (en) 1977-09-06
FR2288393B1 (https=) 1979-04-27
GB1522630A (en) 1978-08-23
FR2288393A1 (fr) 1976-05-14
DE2546650A1 (de) 1976-04-29

Similar Documents

Publication Publication Date Title
DE112011105826B4 (de) Halbleitervorrichtung und Verfahren zur Herstellung selbiger
DE2160427C3 (https=)
DE2618733A1 (de) Halbleiterbauelement mit heterouebergang
DE19605633A1 (de) Verfahren zur Herstellung von Dioden mit verbesserter Durchbruchspannungscharakteristik
DE2641752A1 (de) Verfahren zur herstellung eines feldeffekttransistors
DE2449012C2 (de) Verfahren zur Herstellung von dielektrisch isolierten Halbleiterbereichen
DE2040911A1 (de) Verfahren zum Herstellen eines Halbleiterbauelements
DE3402629A1 (de) Verfahren zur herstellung einer halbleitereinrichtung
DE2823967A1 (de) Npn-transistor
DE2617293C3 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE2500775C3 (de) Hochspannungsfestes planeres Halbleiterbauelement
DE2447354A1 (de) Verfahren zur herstellung eines feldeffekttransistors
DE2531003A1 (de) Verfahren zur ionenimplantation durch eine elektrisch isolierende schicht
DE2448478A1 (de) Verfahren zum herstellen von pn-halbleiteruebergaengen
DE3815512A1 (de) Solarzelle mit verminderter effektiver rekombinationsgeschwindigkeit der ladungstraeger
DE2541275B2 (de) Halbleiterbauelement mit hoher Spannungsfestigkeit und Verfahren zu seiner Herstellung
DE2340950A1 (de) Verfahren zur herstellung einer halbleiter-photokathode und nach dem verfahren hergestellte halbleiter-photokathode
DE4112045A1 (de) Halbleitereinrichtung und verfahren zu deren herstellung
DE2546650C2 (de) Verfahren zur Herstellung von Halbleiterbauelementen mit einem scheibenförmigen Halbleiterkörper
DE69025784T2 (de) Nichtflüchtige Speicher-Halbleiteranordnung
DE2162219A1 (de) Verfahren zum Herstellen eines Feldeffekttransistors
DE2752335B2 (de) Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors mit einem vertikalen Kanal
DE2003716A1 (de) Signalplatte fuer Bildaufnahmeroehren
DE1802849B2 (de) Verfahren zum herstellen einer monolithischen schaltung
DE1957335C3 (de) Strahlungsempfindliches Halbleiterbauelement und seine Verwendung in einer Bildaufnahmeröhre

Legal Events

Date Code Title Description
8125 Change of the main classification

Ipc: H01L 21/308

D2 Grant after examination
8363 Opposition against the patent
8328 Change in the person/name/address of the agent

Free format text: SCHWABE, H., DIPL.-ING. SANDMAIR, K., DIPL.-CHEM. DR.JUR. DR.RER.NAT., PAT.-ANW., 8000 MUENCHEN

8365 Fully valid after opposition proceedings
8380 Miscellaneous part iii

Free format text: IN SPALTE 3 BZW. 4 IST IN ZEILE 4 BZW. 67 NACH DEM WORT "SILIZIUMSCHEIBE" BZW. "SEITE" DAS BEZUGSZEICHEN 1 BZW. 321 EINZUFUEGEN.