FR2288393B1 - - Google Patents
Info
- Publication number
- FR2288393B1 FR2288393B1 FR7531836A FR7531836A FR2288393B1 FR 2288393 B1 FR2288393 B1 FR 2288393B1 FR 7531836 A FR7531836 A FR 7531836A FR 7531836 A FR7531836 A FR 7531836A FR 2288393 B1 FR2288393 B1 FR 2288393B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
- H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49120912A JPS5146867A (en) | 1974-10-18 | 1974-10-18 | Handotaisochino seizohoho |
| JP13413274A JPS5419130B2 (https=) | 1974-11-20 | 1974-11-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2288393A1 FR2288393A1 (fr) | 1976-05-14 |
| FR2288393B1 true FR2288393B1 (https=) | 1979-04-27 |
Family
ID=26458400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7531836A Granted FR2288393A1 (fr) | 1974-10-18 | 1975-10-17 | Procede de fabrication de dispositifs a semi-conducteurs |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4046595A (https=) |
| CA (1) | CA1065497A (https=) |
| DE (1) | DE2546650C2 (https=) |
| FR (1) | FR2288393A1 (https=) |
| GB (1) | GB1522630A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4810669A (en) * | 1987-07-07 | 1989-03-07 | Oki Electric Industry Co., Ltd. | Method of fabricating a semiconductor device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1564427B2 (de) * | 1965-08-09 | 1971-11-11 | Nippon Electric Co. Ltd., Tokio | Verfahren zum herstellen eines doppeldiffusions halbleiter elementes |
| USRE28653E (en) | 1968-04-23 | 1975-12-16 | Method of fabricating semiconductor devices | |
| NL170348C (nl) * | 1970-07-10 | 1982-10-18 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult. |
| US3746587A (en) * | 1970-11-04 | 1973-07-17 | Raytheon Co | Method of making semiconductor diodes |
| US3748187A (en) * | 1971-08-03 | 1973-07-24 | Hughes Aircraft Co | Self-registered doped layer for preventing field inversion in mis circuits |
| US3808058A (en) * | 1972-08-17 | 1974-04-30 | Bell Telephone Labor Inc | Fabrication of mesa diode with channel guard |
-
1975
- 1975-10-14 US US05/621,844 patent/US4046595A/en not_active Expired - Lifetime
- 1975-10-15 GB GB42110/75A patent/GB1522630A/en not_active Expired
- 1975-10-17 DE DE2546650A patent/DE2546650C2/de not_active Expired
- 1975-10-17 FR FR7531836A patent/FR2288393A1/fr active Granted
- 1975-10-17 CA CA237,865A patent/CA1065497A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA1065497A (en) | 1979-10-30 |
| US4046595A (en) | 1977-09-06 |
| GB1522630A (en) | 1978-08-23 |
| DE2546650C2 (de) | 1984-03-29 |
| FR2288393A1 (fr) | 1976-05-14 |
| DE2546650A1 (de) | 1976-04-29 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |