DE2534187C3 - Substrat aus einem einkristallinen Spinell - Google Patents

Substrat aus einem einkristallinen Spinell

Info

Publication number
DE2534187C3
DE2534187C3 DE2534187A DE2534187A DE2534187C3 DE 2534187 C3 DE2534187 C3 DE 2534187C3 DE 2534187 A DE2534187 A DE 2534187A DE 2534187 A DE2534187 A DE 2534187A DE 2534187 C3 DE2534187 C3 DE 2534187C3
Authority
DE
Germany
Prior art keywords
magnesium
spinel
substrate
molar ratio
aluminate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2534187A
Other languages
German (de)
English (en)
Other versions
DE2534187A1 (de
DE2534187B2 (de
Inventor
Mitsuhiro Kimura
Jun-Ichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Tohoku Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation, Tohoku Metal Industries Ltd filed Critical Semiconductor Research Foundation
Publication of DE2534187A1 publication Critical patent/DE2534187A1/de
Publication of DE2534187B2 publication Critical patent/DE2534187B2/de
Application granted granted Critical
Publication of DE2534187C3 publication Critical patent/DE2534187C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H10P14/2921—
    • H10P14/3411—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE2534187A 1974-08-02 1975-07-31 Substrat aus einem einkristallinen Spinell Expired DE2534187C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49089280A JPS5117663A (en) 1974-08-02 1974-08-02 Handotaikibanyo supineruketsusho

Publications (3)

Publication Number Publication Date
DE2534187A1 DE2534187A1 (de) 1976-02-12
DE2534187B2 DE2534187B2 (de) 1979-08-30
DE2534187C3 true DE2534187C3 (de) 1980-05-29

Family

ID=13966296

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2534187A Expired DE2534187C3 (de) 1974-08-02 1975-07-31 Substrat aus einem einkristallinen Spinell

Country Status (3)

Country Link
US (1) US3990902A (enExample)
JP (1) JPS5117663A (enExample)
DE (1) DE2534187C3 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532021B2 (enExample) * 1974-10-26 1980-08-22
JPS605545B2 (ja) * 1980-03-19 1985-02-12 日本碍子株式会社 低膨脹セラミックスおよびその製法
US5024980A (en) * 1987-05-15 1991-06-18 Alpha Industries Ceramic dielectric alloy
US4942146A (en) * 1987-05-15 1990-07-17 Alpha Industries Dense ceramic alloys and process of making same
US4980246A (en) * 1987-05-15 1990-12-25 Alpha Industries Dense ceramic alloys and process of making same
JPH0695554B2 (ja) * 1987-10-12 1994-11-24 工業技術院長 単結晶マグネシアスピネル膜の形成方法
US5413973A (en) * 1989-06-08 1995-05-09 The United States Of America As Represented By The United States Department Of Energy Method for thermal processing alumina-enriched spinel single crystals
DE4121798A1 (de) * 1991-07-02 1993-01-14 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltene zusammensetzung
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
US6844084B2 (en) * 2002-04-03 2005-01-18 Saint-Gobain Ceramics & Plastics, Inc. Spinel substrate and heteroepitaxial growth of III-V materials thereon
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US20060243197A1 (en) * 2004-05-14 2006-11-02 Eiichi Hanamura Transition metal doped spinel type mgal2o4 fluorescent material and laser apparatus using, and method of making, such fluorescent material
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2436840A (en) * 1948-03-02 Table i
US2691088A (en) * 1949-11-28 1954-10-05 Ungewiss Alfred Ohmic resistance
US3531308A (en) * 1967-10-09 1970-09-29 Corning Glass Works Transparent spinel body
US3713877A (en) * 1969-02-10 1973-01-30 H Kirchner Method of strengthening ceramic bodies and strengthened ceramic bodies produced thereby

Also Published As

Publication number Publication date
JPS5339306B2 (enExample) 1978-10-20
DE2534187A1 (de) 1976-02-12
JPS5117663A (en) 1976-02-12
US3990902A (en) 1976-11-09
DE2534187B2 (de) 1979-08-30

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)