DE2524579C3 - Halbleiter-Logikglied - Google Patents
Halbleiter-LogikgliedInfo
- Publication number
- DE2524579C3 DE2524579C3 DE2524579A DE2524579A DE2524579C3 DE 2524579 C3 DE2524579 C3 DE 2524579C3 DE 2524579 A DE2524579 A DE 2524579A DE 2524579 A DE2524579 A DE 2524579A DE 2524579 C3 DE2524579 C3 DE 2524579C3
- Authority
- DE
- Germany
- Prior art keywords
- schottky
- connection
- schottky diode
- diodes
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/12—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using diode rectifiers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2524579A DE2524579C3 (de) | 1975-06-03 | 1975-06-03 | Halbleiter-Logikglied |
| AT618375A AT336930B (de) | 1975-06-03 | 1975-08-08 | Integrierte schaltung |
| CH461076A CH610160A5 (en) | 1975-06-03 | 1976-04-12 | Logic element |
| GB19306/76A GB1551276A (en) | 1975-06-03 | 1976-05-11 | Electrical circuit logic elements |
| IT23666/76A IT1079512B (it) | 1975-06-03 | 1976-05-26 | Elemento logico specie porta bipolare per un circuito lsi |
| FR7616222A FR2313820A1 (fr) | 1975-06-03 | 1976-05-28 | Element logique |
| CA253,926A CA1060587A (en) | 1975-06-03 | 1976-06-02 | Electrical circuit logic elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2524579A DE2524579C3 (de) | 1975-06-03 | 1975-06-03 | Halbleiter-Logikglied |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2524579A1 DE2524579A1 (de) | 1976-12-23 |
| DE2524579B2 DE2524579B2 (de) | 1980-03-27 |
| DE2524579C3 true DE2524579C3 (de) | 1980-11-27 |
Family
ID=5948131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2524579A Expired DE2524579C3 (de) | 1975-06-03 | 1975-06-03 | Halbleiter-Logikglied |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT336930B (enExample) |
| CA (1) | CA1060587A (enExample) |
| CH (1) | CH610160A5 (enExample) |
| DE (1) | DE2524579C3 (enExample) |
| FR (1) | FR2313820A1 (enExample) |
| GB (1) | GB1551276A (enExample) |
| IT (1) | IT1079512B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4156246A (en) * | 1977-05-25 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Combined ohmic and Schottky output transistors for logic circuit |
| US4347585A (en) * | 1980-06-09 | 1982-08-31 | International Business Machines Corporation | Reproduce only storage matrix |
| US4415817A (en) * | 1981-10-08 | 1983-11-15 | Signetics Corporation | Bipolar logic gate including circuitry to prevent turn-off and deep saturation of pull-down transistor |
| NL8300843A (nl) * | 1983-03-09 | 1984-10-01 | Philips Nv | Geintegreerde logische schakeling. |
-
1975
- 1975-06-03 DE DE2524579A patent/DE2524579C3/de not_active Expired
- 1975-08-08 AT AT618375A patent/AT336930B/de not_active IP Right Cessation
-
1976
- 1976-04-12 CH CH461076A patent/CH610160A5/xx not_active IP Right Cessation
- 1976-05-11 GB GB19306/76A patent/GB1551276A/en not_active Expired
- 1976-05-26 IT IT23666/76A patent/IT1079512B/it active
- 1976-05-28 FR FR7616222A patent/FR2313820A1/fr active Granted
- 1976-06-02 CA CA253,926A patent/CA1060587A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AT336930B (de) | 1977-06-10 |
| FR2313820A1 (fr) | 1976-12-31 |
| DE2524579B2 (de) | 1980-03-27 |
| FR2313820B1 (enExample) | 1982-09-03 |
| GB1551276A (en) | 1979-08-30 |
| CA1060587A (en) | 1979-08-14 |
| ATA618375A (de) | 1976-09-15 |
| DE2524579A1 (de) | 1976-12-23 |
| CH610160A5 (en) | 1979-03-30 |
| IT1079512B (it) | 1985-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |