FR2313820B1 - - Google Patents

Info

Publication number
FR2313820B1
FR2313820B1 FR7616222A FR7616222A FR2313820B1 FR 2313820 B1 FR2313820 B1 FR 2313820B1 FR 7616222 A FR7616222 A FR 7616222A FR 7616222 A FR7616222 A FR 7616222A FR 2313820 B1 FR2313820 B1 FR 2313820B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7616222A
Other languages
French (fr)
Other versions
FR2313820A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2313820A1 publication Critical patent/FR2313820A1/fr
Application granted granted Critical
Publication of FR2313820B1 publication Critical patent/FR2313820B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/12—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using diode rectifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7616222A 1975-06-03 1976-05-28 Element logique Granted FR2313820A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2524579A DE2524579C3 (de) 1975-06-03 1975-06-03 Halbleiter-Logikglied

Publications (2)

Publication Number Publication Date
FR2313820A1 FR2313820A1 (fr) 1976-12-31
FR2313820B1 true FR2313820B1 (enExample) 1982-09-03

Family

ID=5948131

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7616222A Granted FR2313820A1 (fr) 1975-06-03 1976-05-28 Element logique

Country Status (7)

Country Link
AT (1) AT336930B (enExample)
CA (1) CA1060587A (enExample)
CH (1) CH610160A5 (enExample)
DE (1) DE2524579C3 (enExample)
FR (1) FR2313820A1 (enExample)
GB (1) GB1551276A (enExample)
IT (1) IT1079512B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4156246A (en) * 1977-05-25 1979-05-22 Bell Telephone Laboratories, Incorporated Combined ohmic and Schottky output transistors for logic circuit
US4347585A (en) * 1980-06-09 1982-08-31 International Business Machines Corporation Reproduce only storage matrix
US4415817A (en) * 1981-10-08 1983-11-15 Signetics Corporation Bipolar logic gate including circuitry to prevent turn-off and deep saturation of pull-down transistor
NL8300843A (nl) * 1983-03-09 1984-10-01 Philips Nv Geintegreerde logische schakeling.

Also Published As

Publication number Publication date
AT336930B (de) 1977-06-10
FR2313820A1 (fr) 1976-12-31
DE2524579B2 (de) 1980-03-27
GB1551276A (en) 1979-08-30
DE2524579C3 (de) 1980-11-27
CA1060587A (en) 1979-08-14
ATA618375A (de) 1976-09-15
DE2524579A1 (de) 1976-12-23
CH610160A5 (en) 1979-03-30
IT1079512B (it) 1985-05-13

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Legal Events

Date Code Title Description
ST Notification of lapse