IT1079512B - Elemento logico specie porta bipolare per un circuito lsi - Google Patents

Elemento logico specie porta bipolare per un circuito lsi

Info

Publication number
IT1079512B
IT1079512B IT23666/76A IT2366676A IT1079512B IT 1079512 B IT1079512 B IT 1079512B IT 23666/76 A IT23666/76 A IT 23666/76A IT 2366676 A IT2366676 A IT 2366676A IT 1079512 B IT1079512 B IT 1079512B
Authority
IT
Italy
Prior art keywords
logic element
double pole
lsi circuit
element species
species double
Prior art date
Application number
IT23666/76A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1079512B publication Critical patent/IT1079512B/it

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/12Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using diode rectifiers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
IT23666/76A 1975-06-03 1976-05-26 Elemento logico specie porta bipolare per un circuito lsi IT1079512B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2524579A DE2524579C3 (de) 1975-06-03 1975-06-03 Halbleiter-Logikglied

Publications (1)

Publication Number Publication Date
IT1079512B true IT1079512B (it) 1985-05-13

Family

ID=5948131

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23666/76A IT1079512B (it) 1975-06-03 1976-05-26 Elemento logico specie porta bipolare per un circuito lsi

Country Status (7)

Country Link
AT (1) AT336930B (enExample)
CA (1) CA1060587A (enExample)
CH (1) CH610160A5 (enExample)
DE (1) DE2524579C3 (enExample)
FR (1) FR2313820A1 (enExample)
GB (1) GB1551276A (enExample)
IT (1) IT1079512B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4156246A (en) * 1977-05-25 1979-05-22 Bell Telephone Laboratories, Incorporated Combined ohmic and Schottky output transistors for logic circuit
US4347585A (en) * 1980-06-09 1982-08-31 International Business Machines Corporation Reproduce only storage matrix
US4415817A (en) * 1981-10-08 1983-11-15 Signetics Corporation Bipolar logic gate including circuitry to prevent turn-off and deep saturation of pull-down transistor
NL8300843A (nl) * 1983-03-09 1984-10-01 Philips Nv Geintegreerde logische schakeling.

Also Published As

Publication number Publication date
AT336930B (de) 1977-06-10
FR2313820A1 (fr) 1976-12-31
DE2524579B2 (de) 1980-03-27
FR2313820B1 (enExample) 1982-09-03
GB1551276A (en) 1979-08-30
DE2524579C3 (de) 1980-11-27
CA1060587A (en) 1979-08-14
ATA618375A (de) 1976-09-15
DE2524579A1 (de) 1976-12-23
CH610160A5 (en) 1979-03-30

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