DE2521366C2 - Sonde zum selektiven Detektieren mindestens eines Bestandteils mit polaren Molekülen eines gasförmigen Gemisches - Google Patents
Sonde zum selektiven Detektieren mindestens eines Bestandteils mit polaren Molekülen eines gasförmigen GemischesInfo
- Publication number
- DE2521366C2 DE2521366C2 DE2521366A DE2521366A DE2521366C2 DE 2521366 C2 DE2521366 C2 DE 2521366C2 DE 2521366 A DE2521366 A DE 2521366A DE 2521366 A DE2521366 A DE 2521366A DE 2521366 C2 DE2521366 C2 DE 2521366C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- probe
- resistance
- dielectric
- tetraethoxysilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000523 sample Substances 0.000 title claims description 111
- 238000001514 detection method Methods 0.000 title claims description 16
- 239000000470 constituent Substances 0.000 title description 4
- 239000008246 gaseous mixture Substances 0.000 title description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 22
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 239000011787 zinc oxide Substances 0.000 claims description 14
- -1 polytetrafluoroethylene Polymers 0.000 claims description 13
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 13
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 13
- 239000003989 dielectric material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000012298 atmosphere Substances 0.000 description 22
- 230000035945 sensitivity Effects 0.000 description 17
- 238000000034 method Methods 0.000 description 13
- 238000011282 treatment Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- PBKYWJHTOHRLDS-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni].[Ni] PBKYWJHTOHRLDS-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241000251730 Chondrichthyes Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000000274 adsorptive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/129—Diode type sensors, e.g. gas sensitive Schottky diodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Fire-Detection Mechanisms (AREA)
- Emergency Alarm Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7418213A FR2273275B1 (en, 2012) | 1974-05-27 | 1974-05-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2521366A1 DE2521366A1 (de) | 1975-12-11 |
| DE2521366C2 true DE2521366C2 (de) | 1985-02-21 |
Family
ID=9139271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2521366A Expired DE2521366C2 (de) | 1974-05-27 | 1975-05-14 | Sonde zum selektiven Detektieren mindestens eines Bestandteils mit polaren Molekülen eines gasförmigen Gemisches |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4025892A (en, 2012) |
| JP (1) | JPS512493A (en, 2012) |
| DE (1) | DE2521366C2 (en, 2012) |
| FR (1) | FR2273275B1 (en, 2012) |
| GB (1) | GB1503355A (en, 2012) |
| IT (1) | IT1038444B (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3106385A1 (de) * | 1980-02-21 | 1981-12-17 | Engström Medical AB, Stockholm | Gasdetektor |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2341859A1 (fr) * | 1976-02-18 | 1977-09-16 | Radiotechnique Compelec | Sonde pour la detection selective de vapeurs, notamment pour la detection de la vapeur d'eau |
| US4273636A (en) * | 1977-05-26 | 1981-06-16 | Kiyoo Shimada | Selective chemical sensitive field effect transistor transducers |
| EP0057728B1 (en) * | 1980-07-21 | 1986-05-28 | Hitachi, Ltd. | Moisture-sensitive element, moisture-sensitive material and manufacturing method for same |
| US4298855A (en) * | 1980-08-26 | 1981-11-03 | Honeywell Inc. | Conductive polymer film humidity sensor |
| JPS5834882A (ja) * | 1981-08-25 | 1983-03-01 | Nitto Electric Ind Co Ltd | 両面粘着用粘着テ−プ積層体 |
| DE3313150C1 (de) * | 1983-04-12 | 1984-10-04 | Endress U. Hauser Gmbh U. Co, 7867 Maulburg | Duennschicht-Feuchtsensor zur Messung der absoluten Feuchte und Verfahren zu seiner Herstellung |
| JPS6050446A (ja) * | 1983-08-31 | 1985-03-20 | Nohmi Bosai Kogyo Co Ltd | ガス検出素子とその製造方法 |
| JPS6082954A (ja) * | 1983-10-14 | 1985-05-11 | Nohmi Bosai Kogyo Co Ltd | ガス検出素子とその製造方法 |
| US4795968A (en) * | 1986-06-30 | 1989-01-03 | Sri International | Gas detection method and apparatus using chemisorption and/or physisorption |
| US5367285A (en) * | 1993-02-26 | 1994-11-22 | Lake Shore Cryotronics, Inc. | Metal oxy-nitride resistance films and methods of making the same |
| EP2502058A2 (en) * | 2009-11-17 | 2012-09-26 | Cubic Corporation | Chemical sensor and manufacturing thereof |
| IT1402406B1 (it) * | 2010-10-22 | 2013-09-04 | St Microelectronics Srl | Metodo di fabbricazione di un dispositivo sensore di una sostanza gassosa di interesse. |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3242007A (en) * | 1961-11-15 | 1966-03-22 | Texas Instruments Inc | Pyrolytic deposition of protective coatings of semiconductor surfaces |
| AU5805873A (en) * | 1972-07-25 | 1975-01-16 | Koichi Sugaya | Humidity sensor electrode assembly |
| DE2407110C3 (de) * | 1974-02-14 | 1981-04-23 | Siemens AG, 1000 Berlin und 8000 München | Sensor zum Nachweis einer in einem Gas oder einer Flüssigkeit einthaltenen Substanz |
-
1974
- 1974-05-27 FR FR7418213A patent/FR2273275B1/fr not_active Expired
-
1975
- 1975-05-13 US US05/577,068 patent/US4025892A/en not_active Expired - Lifetime
- 1975-05-14 DE DE2521366A patent/DE2521366C2/de not_active Expired
- 1975-05-22 GB GB22213/75A patent/GB1503355A/en not_active Expired
- 1975-05-23 IT IT23698/75A patent/IT1038444B/it active
- 1975-05-24 JP JP50061506A patent/JPS512493A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3106385A1 (de) * | 1980-02-21 | 1981-12-17 | Engström Medical AB, Stockholm | Gasdetektor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2273275A1 (en, 2012) | 1975-12-26 |
| IT1038444B (it) | 1979-11-20 |
| JPS512493A (en, 2012) | 1976-01-10 |
| GB1503355A (en) | 1978-03-08 |
| FR2273275B1 (en, 2012) | 1977-03-11 |
| US4025892A (en) | 1977-05-24 |
| DE2521366A1 (de) | 1975-12-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2521366C2 (de) | Sonde zum selektiven Detektieren mindestens eines Bestandteils mit polaren Molekülen eines gasförmigen Gemisches | |
| DE19618935C2 (de) | Gassensor und Verfahren zur Herstellung eines Gassensors | |
| DE2521365C2 (de) | Sonde zum Detektieren mindestens eines Bestandteiles eines gasförmigen Gemisches | |
| EP0043001B1 (de) | Feuchtigkeitsfühler und Verfahren zu seiner Herstellung | |
| DE69401347T2 (de) | Sensor | |
| DE2627441C2 (de) | Fühler zur Feststellung von kondensierter Feuchtigkeit | |
| DE2439119A1 (de) | Feuchtigkeitsfuehler und verfahren zu dessen herstellung | |
| EP0046989B1 (de) | Selektiver Dünnschicht-Gassensor hoher Empfindlichkeit und Stabilität zum Nachweis und zur Messung von gasförmigen Kohlenwasserstoff-Verunreinigungen in der Luft auf der Basis von Wolframoxid (WOx)-Halbleitern, sowie ein Verfahren zu seiner Herstellung | |
| DE1598401C3 (de) | Gerät zur Anzeige der Konzentration eines Anteils eines Gasgemisches, beruhend auf der Eigenschwingungsänderung eines piezoelektrischen Kristalls | |
| DE2824609C2 (de) | Vorrichtung zur Feuchtigkeitsmessung durch elektrostatische Kapazitätsänderung | |
| DE69124355T2 (de) | Kathode einer Schichtschaltung und elektrochemische Zelle zum Messen des Sauerstoffgehaltes von Flüssigkeiten | |
| AT508976A1 (de) | Feuchtigkeitssensor | |
| DE3416124C2 (de) | Verfahren zur Herstellung eines Feuchtigkeitssensors | |
| DE3416108C2 (en, 2012) | ||
| DE69504054T2 (de) | Widerstandsgassensor | |
| DE2706070C2 (de) | Sonde zum selektiven Detektieren polarer Moleküle in einem Gasgemisch | |
| DE2952828A1 (de) | Gasspuerelement und verfahren zu seiner herstellung | |
| EP0146720B1 (de) | Verfahren zur Messung des elektrischen Widerstandes von unter dem Einfluss eines Plasmas hergestellten, dünnen, metallischen Schichten während ihrer Herstellung | |
| DE3624217C2 (en, 2012) | ||
| EP0190605A2 (de) | Verfahren zur Änderung der lokalen, atomaren Zusammensetzung von Festkörpern, insbesondere Halbleitern | |
| DE3131927A1 (de) | "verfahren zur herstellung eines festkoerperelektrolytsauerstofffuehlerelementes mit lamellenstruktur, dessen aeussere elektrode aus der dampfphase niedergeschlagen ist." | |
| DE3422823A1 (de) | Halbleiter-gassensor | |
| DE2938434B1 (de) | Kapazitiver Feuchtigkeitsfuehler und Verfahren zur Herstellung des Fuehlers | |
| DE2822691C3 (de) | Vorrichtung zum elektrochemischen Messen der Sauerstoffkonzentration in Verbrennungsgasen | |
| DE68903098T2 (de) | Verfahren zur herstellung eines sensors zur gasaufspuerung und derartig hergestellter sensor. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |