DE2520764A1 - Verfahren und vorrichtung zum herstellen von bandfoermigen einkristallen aus halbleitermaterial - Google Patents

Verfahren und vorrichtung zum herstellen von bandfoermigen einkristallen aus halbleitermaterial

Info

Publication number
DE2520764A1
DE2520764A1 DE19752520764 DE2520764A DE2520764A1 DE 2520764 A1 DE2520764 A1 DE 2520764A1 DE 19752520764 DE19752520764 DE 19752520764 DE 2520764 A DE2520764 A DE 2520764A DE 2520764 A1 DE2520764 A1 DE 2520764A1
Authority
DE
Germany
Prior art keywords
molten salt
semiconductor material
crystal
diaphragm
molten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19752520764
Other languages
German (de)
English (en)
Inventor
Heinz Dr Henker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19752520764 priority Critical patent/DE2520764A1/de
Priority to JP51039140A priority patent/JPS51136583A/ja
Publication of DE2520764A1 publication Critical patent/DE2520764A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19752520764 1975-05-09 1975-05-09 Verfahren und vorrichtung zum herstellen von bandfoermigen einkristallen aus halbleitermaterial Withdrawn DE2520764A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19752520764 DE2520764A1 (de) 1975-05-09 1975-05-09 Verfahren und vorrichtung zum herstellen von bandfoermigen einkristallen aus halbleitermaterial
JP51039140A JPS51136583A (en) 1975-05-09 1976-04-07 Method and apparatus for making single crystal bands from semiconductor materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752520764 DE2520764A1 (de) 1975-05-09 1975-05-09 Verfahren und vorrichtung zum herstellen von bandfoermigen einkristallen aus halbleitermaterial

Publications (1)

Publication Number Publication Date
DE2520764A1 true DE2520764A1 (de) 1976-11-18

Family

ID=5946201

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752520764 Withdrawn DE2520764A1 (de) 1975-05-09 1975-05-09 Verfahren und vorrichtung zum herstellen von bandfoermigen einkristallen aus halbleitermaterial

Country Status (2)

Country Link
JP (1) JPS51136583A (enExample)
DE (1) DE2520764A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2730162A1 (de) * 1977-01-24 1978-07-27 Mobil Tyco Solar Energy Corp Verfahren und vorrichtung zum ziehen eines monokristallinen koerpers aus einer schmelze
DE3100245A1 (de) * 1980-01-07 1982-01-14 Emanuel M. 02178 Belmont Mass. Sachs Verfahren und vorrichtung zum kontinuierlichen zuechten von kristallinen oder halb-kristallinen bandaehnlichen koerpern aus einer schmelze
EP0115711A1 (fr) * 1983-02-09 1984-08-15 Commissariat à l'Energie Atomique Procédé de préparation de plaques d'un matériau métallique ou semi-métallique par moulage sans contact direct avec les parois du moule
EP4265827A4 (en) * 2020-12-15 2024-12-18 Crystal Systems Corporation THIN PLATE-SHAPED SINGLE CRYSTAL PRODUCTION DEVICE AND THIN PLATE-SHAPED SINGLE CRYSTAL PRODUCTION METHOD

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01105376U (enExample) * 1987-12-28 1989-07-17

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2730162A1 (de) * 1977-01-24 1978-07-27 Mobil Tyco Solar Energy Corp Verfahren und vorrichtung zum ziehen eines monokristallinen koerpers aus einer schmelze
DE3100245A1 (de) * 1980-01-07 1982-01-14 Emanuel M. 02178 Belmont Mass. Sachs Verfahren und vorrichtung zum kontinuierlichen zuechten von kristallinen oder halb-kristallinen bandaehnlichen koerpern aus einer schmelze
EP0115711A1 (fr) * 1983-02-09 1984-08-15 Commissariat à l'Energie Atomique Procédé de préparation de plaques d'un matériau métallique ou semi-métallique par moulage sans contact direct avec les parois du moule
EP4265827A4 (en) * 2020-12-15 2024-12-18 Crystal Systems Corporation THIN PLATE-SHAPED SINGLE CRYSTAL PRODUCTION DEVICE AND THIN PLATE-SHAPED SINGLE CRYSTAL PRODUCTION METHOD

Also Published As

Publication number Publication date
JPS51136583A (en) 1976-11-26
JPS546509B2 (enExample) 1979-03-29

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8136 Disposal/non-payment of the fee for publication/grant