JPS51136583A - Method and apparatus for making single crystal bands from semiconductor materials - Google Patents

Method and apparatus for making single crystal bands from semiconductor materials

Info

Publication number
JPS51136583A
JPS51136583A JP3914076A JP3914076A JPS51136583A JP S51136583 A JPS51136583 A JP S51136583A JP 3914076 A JP3914076 A JP 3914076A JP 3914076 A JP3914076 A JP 3914076A JP S51136583 A JPS51136583 A JP S51136583A
Authority
JP
Japan
Prior art keywords
single crystal
semiconductor materials
making single
crystal bands
bands
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3914076A
Other languages
Japanese (ja)
Other versions
JPS546509B2 (en
Inventor
Henkeru Haintsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS51136583A publication Critical patent/JPS51136583A/en
Publication of JPS546509B2 publication Critical patent/JPS546509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP3914076A 1975-05-09 1976-04-07 Method and apparatus for making single crystal bands from semiconductor materials Granted JPS51136583A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752520764 DE2520764A1 (en) 1975-05-09 1975-05-09 Single crystal ribbon pulling from fused semiconductor material - through orifice in salt bath to reduce surface tension

Publications (2)

Publication Number Publication Date
JPS51136583A true JPS51136583A (en) 1976-11-26
JPS546509B2 JPS546509B2 (en) 1979-03-29

Family

ID=5946201

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3914076A Granted JPS51136583A (en) 1975-05-09 1976-04-07 Method and apparatus for making single crystal bands from semiconductor materials

Country Status (2)

Country Link
JP (1) JPS51136583A (en)
DE (1) DE2520764A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
DE3366718D1 (en) * 1983-02-09 1986-11-13 Commissariat Energie Atomique Method of producing plates of metallic or semiconducting material by moulding without direct contact with the walls of the mould
JPH01105376U (en) * 1987-12-28 1989-07-17

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group

Also Published As

Publication number Publication date
JPS546509B2 (en) 1979-03-29
DE2520764A1 (en) 1976-11-18

Similar Documents

Publication Publication Date Title
JPS5258080A (en) Continuous semiconductor crystal growth apparatus
JPS5236553A (en) Method of and apparatus for continuously bending long material
HU175045B (en) Process and apparatus for producing celle-culture
JPS5259703A (en) Process and apparatus for treating chippings from bulky material
JPS5245583A (en) Method and apparatus for heatttreating and substanceeexchanging grain materials
ZA763337B (en) Apparatus for cooling bulk material
JPS528681A (en) Apparatus for treating wasted material and method thereof
JPS5240675A (en) Method and apparatus for forming webblike substance
JPS5388664A (en) Method and apparatus for manufacturing fine crystals
JPS51143267A (en) Method and device for conveying material
JPS5250685A (en) Apparatus for dividing wafers
ZA77998B (en) Apparatus and method for mixing material
ZA772962B (en) Method of and apparatus for the treatment of material
JPS528989A (en) Method and apparatus for making single crystal layers
HK16180A (en) Method and apparatus for separating material
JPS525677A (en) Method and apparatus for manufacturing crystal continuously
JPS524422A (en) Method and apparatus for purifying released material
JPS5218463A (en) Method of and apparatus for winding belt shaped material
CA1015135A (en) Method and apparatus for treating particulate material
JPS51136583A (en) Method and apparatus for making single crystal bands from semiconductor materials
GB1537864A (en) Method and apparatus for filtering slurries
JPS5249876A (en) Xxray diffraction method and apparatus for same
JPS52144857A (en) Treating apparatus for band like material
JPS51148598A (en) Method and device for making material piece for package
JPS5224191A (en) Crystal growing process for mercury iodide and its apparatus