DE2519360C2 - Mittel zum Eindiffundieren von Aluminium in ein Halbleitersubstrat und dessen Verwendung - Google Patents

Mittel zum Eindiffundieren von Aluminium in ein Halbleitersubstrat und dessen Verwendung

Info

Publication number
DE2519360C2
DE2519360C2 DE2519360A DE2519360A DE2519360C2 DE 2519360 C2 DE2519360 C2 DE 2519360C2 DE 2519360 A DE2519360 A DE 2519360A DE 2519360 A DE2519360 A DE 2519360A DE 2519360 C2 DE2519360 C2 DE 2519360C2
Authority
DE
Germany
Prior art keywords
aluminum
diffusion
semiconductor substrate
substrate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2519360A
Other languages
German (de)
English (en)
Other versions
DE2519360A1 (de
Inventor
Guy Paris Dumas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILEC-SEMI-CONDUCTEURS PARIS FR
Original Assignee
SILEC-SEMI-CONDUCTEURS PARIS FR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILEC-SEMI-CONDUCTEURS PARIS FR filed Critical SILEC-SEMI-CONDUCTEURS PARIS FR
Publication of DE2519360A1 publication Critical patent/DE2519360A1/de
Application granted granted Critical
Publication of DE2519360C2 publication Critical patent/DE2519360C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/19—Diffusion sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins

Landscapes

  • Chemically Coating (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2519360A 1974-08-01 1975-04-30 Mittel zum Eindiffundieren von Aluminium in ein Halbleitersubstrat und dessen Verwendung Expired DE2519360C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7426821A FR2280974A1 (fr) 1974-08-01 1974-08-01 Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus

Publications (2)

Publication Number Publication Date
DE2519360A1 DE2519360A1 (de) 1976-02-12
DE2519360C2 true DE2519360C2 (de) 1983-03-03

Family

ID=9142005

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2519360A Expired DE2519360C2 (de) 1974-08-01 1975-04-30 Mittel zum Eindiffundieren von Aluminium in ein Halbleitersubstrat und dessen Verwendung

Country Status (5)

Country Link
US (1) US4038111A (online.php)
BE (1) BE826703A (online.php)
DE (1) DE2519360C2 (online.php)
FR (1) FR2280974A1 (online.php)
IT (1) IT1038523B (online.php)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099997A (en) * 1976-06-21 1978-07-11 Rca Corporation Method of fabricating a semiconductor device
US4050967A (en) * 1976-12-09 1977-09-27 Rca Corporation Method of selective aluminum diffusion
US4329016A (en) * 1978-06-01 1982-05-11 Hughes Aircraft Company Optical waveguide formed by diffusing metal into substrate
US4206251A (en) * 1978-06-01 1980-06-03 Hughes Aircraft Company Method for diffusing metals into substrates
FR2440083A1 (fr) * 1978-10-26 1980-05-23 Commissariat Energie Atomique Procede de realisation de composants semi-conducteurs presentant des proprietes de conversion opto-electroniques
DE2920673C2 (de) * 1979-05-22 1987-01-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schichtbildende Lösung
US4264383A (en) * 1979-08-23 1981-04-28 Westinghouse Electric Corp. Technique for making asymmetric thyristors
DE3267491D1 (en) * 1981-03-02 1986-01-02 Bbc Brown Boveri & Cie Process for doping semiconductor bodies for the production of semiconductor devices
FR2771239B1 (fr) 1997-11-18 2000-12-08 Thomson Csf Procede de controle de flux d'information numerique
DE102011011200A1 (de) 2011-02-14 2012-08-16 Dechema Gesellschaft Für Chemische Technik Und Biotechnologie E.V. Verfahren zur Erzeugung von Diffusionsschichten ohne Aktivator über Metallfolien
CN116344689B (zh) * 2023-05-26 2023-07-21 中诚华隆计算机技术有限公司 一种具有涂层的发光芯片及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3354005A (en) * 1965-10-23 1967-11-21 Western Electric Co Methods of applying doping compositions to base materials
GB1204544A (en) * 1966-09-02 1970-09-09 Hitachi Ltd Semiconductor device and method of manufacturing the same
US3630793A (en) * 1969-02-24 1971-12-28 Ralph W Christensen Method of making junction-type semiconductor devices
US3615943A (en) * 1969-11-25 1971-10-26 Milton Genser Deposition of doped and undoped silica films on semiconductor surfaces
DE2007753A1 (de) * 1970-02-19 1971-08-26 Siemens Ag Verfahren zum Herstellen von diffun dierten Halbleiterbauelementen unter Ver wendung von festen Dotierstoffquellen
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
US3789023A (en) * 1972-08-09 1974-01-29 Motorola Inc Liquid diffusion dopant source for semiconductors
US3928095A (en) * 1972-11-08 1975-12-23 Suwa Seikosha Kk Semiconductor device and process for manufacturing same

Also Published As

Publication number Publication date
DE2519360A1 (de) 1976-02-12
FR2280974A1 (fr) 1976-02-27
BE826703A (fr) 1975-09-15
US4038111A (en) 1977-07-26
IT1038523B (it) 1979-11-30
FR2280974B1 (online.php) 1978-03-31

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Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8363 Opposition against the patent
8365 Fully valid after opposition proceedings
8339 Ceased/non-payment of the annual fee