FR2280974A1 - Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus - Google Patents

Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus

Info

Publication number
FR2280974A1
FR2280974A1 FR7426821A FR7426821A FR2280974A1 FR 2280974 A1 FR2280974 A1 FR 2280974A1 FR 7426821 A FR7426821 A FR 7426821A FR 7426821 A FR7426821 A FR 7426821A FR 2280974 A1 FR2280974 A1 FR 2280974A1
Authority
FR
France
Prior art keywords
aluminum
manufacturing process
semiconductor manufacturing
process including
new products
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7426821A
Other languages
English (en)
French (fr)
Other versions
FR2280974B1 (online.php
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7426821A priority Critical patent/FR2280974A1/fr
Priority to BE154347A priority patent/BE826703A/xx
Priority to DE2519360A priority patent/DE2519360C2/de
Priority to US05/595,751 priority patent/US4038111A/en
Priority to IT22750/75A priority patent/IT1038523B/it
Publication of FR2280974A1 publication Critical patent/FR2280974A1/fr
Application granted granted Critical
Publication of FR2280974B1 publication Critical patent/FR2280974B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/19—Diffusion sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
FR7426821A 1974-08-01 1974-08-01 Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus Granted FR2280974A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7426821A FR2280974A1 (fr) 1974-08-01 1974-08-01 Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus
BE154347A BE826703A (fr) 1974-08-01 1975-03-14 Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus
DE2519360A DE2519360C2 (de) 1974-08-01 1975-04-30 Mittel zum Eindiffundieren von Aluminium in ein Halbleitersubstrat und dessen Verwendung
US05/595,751 US4038111A (en) 1974-08-01 1975-07-14 Method for diffusion of aluminium
IT22750/75A IT1038523B (it) 1974-08-01 1975-07-24 Procedimento di fabbricazione di semiconduttori comprendente almeno uno strato drogato all'alluminio

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7426821A FR2280974A1 (fr) 1974-08-01 1974-08-01 Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus

Publications (2)

Publication Number Publication Date
FR2280974A1 true FR2280974A1 (fr) 1976-02-27
FR2280974B1 FR2280974B1 (online.php) 1978-03-31

Family

ID=9142005

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7426821A Granted FR2280974A1 (fr) 1974-08-01 1974-08-01 Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus

Country Status (5)

Country Link
US (1) US4038111A (online.php)
BE (1) BE826703A (online.php)
DE (1) DE2519360C2 (online.php)
FR (1) FR2280974A1 (online.php)
IT (1) IT1038523B (online.php)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2356272A1 (fr) * 1976-06-21 1978-01-20 Rca Corp Procede de fabrication d'un dispositif semi-conducteur
FR2373877A1 (fr) * 1976-12-09 1978-07-07 Rca Corp Procede de diffusion selective d'aluminium
EP0061787A1 (de) * 1981-03-02 1982-10-06 BBC Aktiengesellschaft Brown, Boveri & Cie. Verfahren zum Dotieren von Trägern aus Silicium für die Halbleiterfertigung

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4329016A (en) * 1978-06-01 1982-05-11 Hughes Aircraft Company Optical waveguide formed by diffusing metal into substrate
US4206251A (en) * 1978-06-01 1980-06-03 Hughes Aircraft Company Method for diffusing metals into substrates
FR2440083A1 (fr) * 1978-10-26 1980-05-23 Commissariat Energie Atomique Procede de realisation de composants semi-conducteurs presentant des proprietes de conversion opto-electroniques
DE2920673C2 (de) * 1979-05-22 1987-01-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schichtbildende Lösung
US4264383A (en) * 1979-08-23 1981-04-28 Westinghouse Electric Corp. Technique for making asymmetric thyristors
FR2771239B1 (fr) 1997-11-18 2000-12-08 Thomson Csf Procede de controle de flux d'information numerique
DE102011011200A1 (de) 2011-02-14 2012-08-16 Dechema Gesellschaft Für Chemische Technik Und Biotechnologie E.V. Verfahren zur Erzeugung von Diffusionsschichten ohne Aktivator über Metallfolien
CN116344689B (zh) * 2023-05-26 2023-07-21 中诚华隆计算机技术有限公司 一种具有涂层的发光芯片及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3354005A (en) * 1965-10-23 1967-11-21 Western Electric Co Methods of applying doping compositions to base materials
GB1204544A (en) * 1966-09-02 1970-09-09 Hitachi Ltd Semiconductor device and method of manufacturing the same
US3630793A (en) * 1969-02-24 1971-12-28 Ralph W Christensen Method of making junction-type semiconductor devices
US3615943A (en) * 1969-11-25 1971-10-26 Milton Genser Deposition of doped and undoped silica films on semiconductor surfaces
DE2007753A1 (de) * 1970-02-19 1971-08-26 Siemens Ag Verfahren zum Herstellen von diffun dierten Halbleiterbauelementen unter Ver wendung von festen Dotierstoffquellen
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
US3789023A (en) * 1972-08-09 1974-01-29 Motorola Inc Liquid diffusion dopant source for semiconductors
US3928095A (en) * 1972-11-08 1975-12-23 Suwa Seikosha Kk Semiconductor device and process for manufacturing same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2356272A1 (fr) * 1976-06-21 1978-01-20 Rca Corp Procede de fabrication d'un dispositif semi-conducteur
FR2373877A1 (fr) * 1976-12-09 1978-07-07 Rca Corp Procede de diffusion selective d'aluminium
EP0061787A1 (de) * 1981-03-02 1982-10-06 BBC Aktiengesellschaft Brown, Boveri & Cie. Verfahren zum Dotieren von Trägern aus Silicium für die Halbleiterfertigung

Also Published As

Publication number Publication date
DE2519360A1 (de) 1976-02-12
DE2519360C2 (de) 1983-03-03
BE826703A (fr) 1975-09-15
US4038111A (en) 1977-07-26
IT1038523B (it) 1979-11-30
FR2280974B1 (online.php) 1978-03-31

Similar Documents

Publication Publication Date Title
BE824238A (fr) Procede de fabrication de l'acier
BE826703A (fr) Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus
FR2273650A1 (fr) Procede et tete d'extrusion pour la fabrication d'une main-courante, et main-courante ainsi obtenue
BE835666A (fr) Procede de fabrication d'une tole d'acier a haute resistance reduite a froid
IT948245B (it) Processo per fabbricare oggetti con la metallurgia delle polveri
BE778509A (fr) Procede de coulee d'aluminium en continu
BE876676Q (fr) Perfectionnements apportes et/ou relatifs a un procede de fabrication de torons de cables metalliques, et cables metalliques ainsi obtenus
FR2279859A1 (fr) Articles en acier revetus d'une couche plombee
FR1318800A (fr) Procédé de fabrication de produits à base de verre et d'aluminium, ou d'alliage d'aluminium
BE779109A (fr) Procede de fabrication de fluorure d'aluminium
FR2278785A1 (fr) Procede de renforcement des caracteristiques mecaniques d'alliages d'aluminium a traitement thermique et produits ainsi obtenus
CH555410A (fr) Procede de production continue d'aluminium.
BE827261R (fr) Procede de fabrication de chlorohydroxydes d'aluminium
FR1315056A (fr) Procédé et installation pour la production d'éléments de construction sans fin en verre, à section profilée, par soudage de bandes planes ou profilées
CH523210A (fr) Procédé et appareil pour la fabrication d'un vitrage isolant
CH453713A (fr) Procédé de fabrication d'aluminium métallique purifié
FR2293798A1 (fr) Procede pour la fabrication de diamants semi-conducteurs perfectionnes, et diamants ainsi obtenus
BE840615A (fr) Procede pour la fabrication d'elements textiles frises par fibrillation de films et produits obtenus
BE886931Q (fr) Procede pour la realisation d'objets de verre de quartz par etirage et objets ainsi obtenus
BE762979A (fr) Procede de fabrication de couronnes d'orientation et produits ainsi obtenus
FR1391659A (fr) Procédé de fabrication d'articles d'épaisseur relativement faible en acier à haute teneur en aluminium ou analogue
BE843934A (fr) Procede de fabrication d'hydroxychlorures d'aluminium
BE774488A (fr) Procede de fabrication de fils d'aluminium doubles de cuivre
FR2295805A1 (fr) Procede de fabrication de feuilles d'aluminium a grain fin
BE771294A (fr) Procede de production de fluorure d'aluminium

Legal Events

Date Code Title Description
ST Notification of lapse