DE2516291A1 - Verfahren zum herstellen von mos- schaltungen - Google Patents
Verfahren zum herstellen von mos- schaltungenInfo
- Publication number
- DE2516291A1 DE2516291A1 DE19752516291 DE2516291A DE2516291A1 DE 2516291 A1 DE2516291 A1 DE 2516291A1 DE 19752516291 DE19752516291 DE 19752516291 DE 2516291 A DE2516291 A DE 2516291A DE 2516291 A1 DE2516291 A1 DE 2516291A1
- Authority
- DE
- Germany
- Prior art keywords
- insulating material
- source
- areas
- over
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000011810 insulating material Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052810 boron oxide Inorganic materials 0.000 claims description 13
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000356 contaminant Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 239000012774 insulation material Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 18
- 239000004020 conductor Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46183674A | 1974-04-18 | 1974-04-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2516291A1 true DE2516291A1 (de) | 1975-11-06 |
Family
ID=23834119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752516291 Ceased DE2516291A1 (de) | 1974-04-18 | 1975-04-14 | Verfahren zum herstellen von mos- schaltungen |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5543630B2 (cs) |
| CA (1) | CA1008564A (cs) |
| DE (1) | DE2516291A1 (cs) |
| FR (1) | FR2268356B1 (cs) |
| GB (1) | GB1494569A (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534444A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semiconductor device |
| JPS60138974A (ja) * | 1983-12-27 | 1985-07-23 | Fuji Electric Corp Res & Dev Ltd | 絶縁ゲ−ト型電界効果トランジスタの製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3342650A (en) * | 1964-02-10 | 1967-09-19 | Hitachi Ltd | Method of making semiconductor devices by double masking |
| DE1269738B (de) * | 1964-10-20 | 1968-06-06 | Telefunken Patent | Verfahren zur Stabilisierung von Halbleiterbauelementen |
| US3574010A (en) * | 1968-12-30 | 1971-04-06 | Texas Instruments Inc | Fabrication of metal insulator semiconductor field effect transistors |
| DE1771341A1 (de) * | 1967-05-10 | 1971-12-23 | Ncr Co | Verfahren zum Erzeugen einer Siliziumdioxydschicht auf der Oberflaeche eines Halbleitertraegers fuer die Herstellung eines Halbleiterelements |
-
1975
- 1975-02-27 CA CA220,880A patent/CA1008564A/en not_active Expired
- 1975-03-14 GB GB1076275A patent/GB1494569A/en not_active Expired
- 1975-03-24 JP JP3458975A patent/JPS5543630B2/ja not_active Expired
- 1975-04-14 DE DE19752516291 patent/DE2516291A1/de not_active Ceased
- 1975-04-16 FR FR7511806A patent/FR2268356B1/fr not_active Expired
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3342650A (en) * | 1964-02-10 | 1967-09-19 | Hitachi Ltd | Method of making semiconductor devices by double masking |
| DE1269738B (de) * | 1964-10-20 | 1968-06-06 | Telefunken Patent | Verfahren zur Stabilisierung von Halbleiterbauelementen |
| DE1771341A1 (de) * | 1967-05-10 | 1971-12-23 | Ncr Co | Verfahren zum Erzeugen einer Siliziumdioxydschicht auf der Oberflaeche eines Halbleitertraegers fuer die Herstellung eines Halbleiterelements |
| US3574010A (en) * | 1968-12-30 | 1971-04-06 | Texas Instruments Inc | Fabrication of metal insulator semiconductor field effect transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2268356B1 (cs) | 1982-05-14 |
| FR2268356A1 (cs) | 1975-11-14 |
| JPS50137481A (cs) | 1975-10-31 |
| CA1008564A (en) | 1977-04-12 |
| GB1494569A (en) | 1977-12-07 |
| JPS5543630B2 (cs) | 1980-11-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8131 | Rejection |