DE2508121C3 - Verfahren und Vorrichtung zum epitaktischen Abscheiden einer Verbindungshalbleiterschicht aus einer Lösungsschmelze auf einem Halbleiterplättchen - Google Patents

Verfahren und Vorrichtung zum epitaktischen Abscheiden einer Verbindungshalbleiterschicht aus einer Lösungsschmelze auf einem Halbleiterplättchen

Info

Publication number
DE2508121C3
DE2508121C3 DE2508121A DE2508121A DE2508121C3 DE 2508121 C3 DE2508121 C3 DE 2508121C3 DE 2508121 A DE2508121 A DE 2508121A DE 2508121 A DE2508121 A DE 2508121A DE 2508121 C3 DE2508121 C3 DE 2508121C3
Authority
DE
Germany
Prior art keywords
solution
melt
holder
gap
vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2508121A
Other languages
German (de)
English (en)
Other versions
DE2508121A1 (de
DE2508121B2 (de
Inventor
Nobuyuki Sagamihara Isawa
Kazuya Zama Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2508121A1 publication Critical patent/DE2508121A1/de
Publication of DE2508121B2 publication Critical patent/DE2508121B2/de
Application granted granted Critical
Publication of DE2508121C3 publication Critical patent/DE2508121C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2508121A 1974-03-01 1975-02-25 Verfahren und Vorrichtung zum epitaktischen Abscheiden einer Verbindungshalbleiterschicht aus einer Lösungsschmelze auf einem Halbleiterplättchen Expired DE2508121C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49024637A JPS50119566A (https=) 1974-03-01 1974-03-01

Publications (3)

Publication Number Publication Date
DE2508121A1 DE2508121A1 (de) 1975-09-04
DE2508121B2 DE2508121B2 (de) 1979-12-06
DE2508121C3 true DE2508121C3 (de) 1980-08-14

Family

ID=12143632

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2508121A Expired DE2508121C3 (de) 1974-03-01 1975-02-25 Verfahren und Vorrichtung zum epitaktischen Abscheiden einer Verbindungshalbleiterschicht aus einer Lösungsschmelze auf einem Halbleiterplättchen

Country Status (7)

Country Link
US (1) US3996891A (https=)
JP (1) JPS50119566A (https=)
CA (1) CA1051325A (https=)
DE (1) DE2508121C3 (https=)
FR (1) FR2280202A1 (https=)
GB (1) GB1494254A (https=)
NL (1) NL7502495A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3315794C2 (de) * 1983-04-30 1985-11-07 Telefunken electronic GmbH, 7100 Heilbronn Vorrichtung zur Flüssigphasenepitaxie
US4500367A (en) * 1983-10-31 1985-02-19 At&T Bell Laboratories LPE Growth on group III-V compound semiconductor substrates containing phosphorus
US4550645A (en) * 1984-04-27 1985-11-05 Sundstrand Corporation Thin valve plate for a hydraulic unit
DE3617404A1 (de) * 1986-05-23 1987-11-26 Telefunken Electronic Gmbh Verfahren zum epitaktischen abscheiden duenner einkristalliner halbleiterschichten aus pseudobinaerem halbleitermaterial auf einem einkristallinen substrat
DE3706512A1 (de) * 1987-02-28 1988-09-08 Philips Patentverwaltung Verfahren und vorrichtung zur herstellung epitaxialer schichten aus schmelzfluessigen loesungen
US5169608A (en) * 1989-09-26 1992-12-08 Mitsubishi Cable Industries, Ltd. Inorganic article for crystal growth and liquid-phase epitaxy apparatus using the same
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5264397A (en) * 1991-02-15 1993-11-23 The Whitaker Corporation Method for activating zinc in semiconductor devices
JP2885268B2 (ja) * 1994-08-30 1999-04-19 信越半導体株式会社 液相成長方法及び装置
CN112002786B (zh) * 2020-06-29 2021-10-08 华灿光电（浙江）有限公司 发光二极管外延片的制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US616821A (en) * 1898-12-27 Process of and apparatus for obtaining crystals
US2414680A (en) * 1944-07-29 1947-01-21 Polaroid Corp Process of crystal formation
US2414679A (en) * 1944-09-14 1947-01-21 Polaroid Corp Process of crystal formation
US2759803A (en) * 1950-05-22 1956-08-21 Gen Electric Co Ltd Methods for use in the growing of crystals
US2810366A (en) * 1954-04-14 1957-10-22 Technicon Int Ltd Receptacle carrier for tissue processing
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
NL6614999A (https=) * 1966-10-22 1968-04-23
US3463680A (en) * 1966-11-25 1969-08-26 Massachusetts Inst Technology Solution growth of epitaxial layers of semiconductor material
JPS53271B1 (https=) * 1971-03-05 1978-01-06
US3765959A (en) * 1971-07-30 1973-10-16 Tokyo Shibaura Electric Co Method for the liquid phase epitaxial growth of semiconductor crystals
JPS5342230B2 (https=) * 1972-10-19 1978-11-09

Also Published As

Publication number Publication date
NL7502495A (nl) 1975-09-03
DE2508121A1 (de) 1975-09-04
US3996891A (en) 1976-12-14
FR2280202A1 (fr) 1976-02-20
CA1051325A (en) 1979-03-27
DE2508121B2 (de) 1979-12-06
JPS50119566A (https=) 1975-09-19
FR2280202B1 (https=) 1978-12-29
GB1494254A (en) 1977-12-07

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee