GB1494254A - Liquid phase epitaxial growth - Google Patents

Liquid phase epitaxial growth

Info

Publication number
GB1494254A
GB1494254A GB8531/75A GB853175A GB1494254A GB 1494254 A GB1494254 A GB 1494254A GB 8531/75 A GB8531/75 A GB 8531/75A GB 853175 A GB853175 A GB 853175A GB 1494254 A GB1494254 A GB 1494254A
Authority
GB
United Kingdom
Prior art keywords
solution
liquid phase
wafers
grown
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8531/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1494254A publication Critical patent/GB1494254A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB8531/75A 1974-03-01 1975-02-28 Liquid phase epitaxial growth Expired GB1494254A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49024637A JPS50119566A (https=) 1974-03-01 1974-03-01

Publications (1)

Publication Number Publication Date
GB1494254A true GB1494254A (en) 1977-12-07

Family

ID=12143632

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8531/75A Expired GB1494254A (en) 1974-03-01 1975-02-28 Liquid phase epitaxial growth

Country Status (7)

Country Link
US (1) US3996891A (https=)
JP (1) JPS50119566A (https=)
CA (1) CA1051325A (https=)
DE (1) DE2508121C3 (https=)
FR (1) FR2280202A1 (https=)
GB (1) GB1494254A (https=)
NL (1) NL7502495A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3315794C2 (de) * 1983-04-30 1985-11-07 Telefunken electronic GmbH, 7100 Heilbronn Vorrichtung zur Flüssigphasenepitaxie
US4500367A (en) * 1983-10-31 1985-02-19 At&T Bell Laboratories LPE Growth on group III-V compound semiconductor substrates containing phosphorus
US4550645A (en) * 1984-04-27 1985-11-05 Sundstrand Corporation Thin valve plate for a hydraulic unit
DE3617404A1 (de) * 1986-05-23 1987-11-26 Telefunken Electronic Gmbh Verfahren zum epitaktischen abscheiden duenner einkristalliner halbleiterschichten aus pseudobinaerem halbleitermaterial auf einem einkristallinen substrat
DE3706512A1 (de) * 1987-02-28 1988-09-08 Philips Patentverwaltung Verfahren und vorrichtung zur herstellung epitaxialer schichten aus schmelzfluessigen loesungen
US5169608A (en) * 1989-09-26 1992-12-08 Mitsubishi Cable Industries, Ltd. Inorganic article for crystal growth and liquid-phase epitaxy apparatus using the same
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5264397A (en) * 1991-02-15 1993-11-23 The Whitaker Corporation Method for activating zinc in semiconductor devices
JP2885268B2 (ja) * 1994-08-30 1999-04-19 信越半導体株式会社 液相成長方法及び装置
CN112002786B (zh) * 2020-06-29 2021-10-08 华灿光电（浙江）有限公司 发光二极管外延片的制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US616821A (en) * 1898-12-27 Process of and apparatus for obtaining crystals
US2414680A (en) * 1944-07-29 1947-01-21 Polaroid Corp Process of crystal formation
US2414679A (en) * 1944-09-14 1947-01-21 Polaroid Corp Process of crystal formation
US2759803A (en) * 1950-05-22 1956-08-21 Gen Electric Co Ltd Methods for use in the growing of crystals
US2810366A (en) * 1954-04-14 1957-10-22 Technicon Int Ltd Receptacle carrier for tissue processing
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
NL6614999A (https=) * 1966-10-22 1968-04-23
US3463680A (en) * 1966-11-25 1969-08-26 Massachusetts Inst Technology Solution growth of epitaxial layers of semiconductor material
JPS53271B1 (https=) * 1971-03-05 1978-01-06
US3765959A (en) * 1971-07-30 1973-10-16 Tokyo Shibaura Electric Co Method for the liquid phase epitaxial growth of semiconductor crystals
JPS5342230B2 (https=) * 1972-10-19 1978-11-09

Also Published As

Publication number Publication date
NL7502495A (nl) 1975-09-03
DE2508121C3 (de) 1980-08-14
DE2508121A1 (de) 1975-09-04
US3996891A (en) 1976-12-14
FR2280202A1 (fr) 1976-02-20
CA1051325A (en) 1979-03-27
DE2508121B2 (de) 1979-12-06
JPS50119566A (https=) 1975-09-19
FR2280202B1 (https=) 1978-12-29

Similar Documents

Publication Publication Date Title
GB1319311A (en) Epitaxial composite and method of making
GB1494254A (en) Liquid phase epitaxial growth
GB1320043A (en) Gallium phosphide electroluminescent light sources
JPS559467A (en) Epitaxial wafer
GB1259897A (en) Method for growing epitaxial films
US3965347A (en) Electroluminescent semiconductor diode with hetero-structure
GB1433161A (en) Epitaxially grown layers
GB1439822A (en) Gallium arsenide photocathodes
GB1334751A (en) Epitaxial solution growth of ternary iii-vb compounds
US3745073A (en) Single-step process for making p-n junctions in zinc selenide
GB1416005A (en) Method of manufacturing a gallium phsophide red-emitting device
GB1149109A (en) Preparation of semiconductor compounds
GB1477941A (en) Epitaxial methods of growing layers of gallium phosphide
GB1363524A (en) Diffusion of impurities into a substrate
GB1319560A (en) Epitaxial composite and method of making
Widmer et al. Liquid phase epitaxy on zinc telluride
GB1468106A (en) Method and apparatus for crystal growth
GB1186206A (en) Improved Sound Recording System.
Linden Injection Electroluminescence from Diffused Gallium‐Aluminum Arsenide Diodes
GB1314149A (en) Epitaxial deposition
KR790000518B1 (en) Method of producing gallium phosphide redlight emission diode
GB1526898A (en) Production of epitaxial layers on monocrystalline substrates
GB1282249A (en) Improvements in or relating to the production of gallium arsenide crystals
JPS5629382A (en) Light emitting device of double hetero structure and manufacture thereof
JAIN Low temperature epitaxially-grown Ge-GaAs and Ge-ZnSe heterojunctions[Ph. D. Thesis]

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee