FR2280202A1 - Appareil et procede de croissance epitaxiale en phase liquide - Google Patents

Appareil et procede de croissance epitaxiale en phase liquide

Info

Publication number
FR2280202A1
FR2280202A1 FR7506403A FR7506403A FR2280202A1 FR 2280202 A1 FR2280202 A1 FR 2280202A1 FR 7506403 A FR7506403 A FR 7506403A FR 7506403 A FR7506403 A FR 7506403A FR 2280202 A1 FR2280202 A1 FR 2280202A1
Authority
FR
France
Prior art keywords
liquid phase
epitaxial growth
epitaxial
growth
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7506403A
Other languages
English (en)
French (fr)
Other versions
FR2280202B1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2280202A1 publication Critical patent/FR2280202A1/fr
Application granted granted Critical
Publication of FR2280202B1 publication Critical patent/FR2280202B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7506403A 1974-03-01 1975-02-28 Appareil et procede de croissance epitaxiale en phase liquide Granted FR2280202A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49024637A JPS50119566A (https=) 1974-03-01 1974-03-01

Publications (2)

Publication Number Publication Date
FR2280202A1 true FR2280202A1 (fr) 1976-02-20
FR2280202B1 FR2280202B1 (https=) 1978-12-29

Family

ID=12143632

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7506403A Granted FR2280202A1 (fr) 1974-03-01 1975-02-28 Appareil et procede de croissance epitaxiale en phase liquide

Country Status (7)

Country Link
US (1) US3996891A (https=)
JP (1) JPS50119566A (https=)
CA (1) CA1051325A (https=)
DE (1) DE2508121C3 (https=)
FR (1) FR2280202A1 (https=)
GB (1) GB1494254A (https=)
NL (1) NL7502495A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3315794A1 (de) * 1983-04-30 1984-10-31 Telefunken electronic GmbH, 7100 Heilbronn Vorrichtung zur fluessigphasenepitaxie

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500367A (en) * 1983-10-31 1985-02-19 At&T Bell Laboratories LPE Growth on group III-V compound semiconductor substrates containing phosphorus
US4550645A (en) * 1984-04-27 1985-11-05 Sundstrand Corporation Thin valve plate for a hydraulic unit
DE3617404A1 (de) * 1986-05-23 1987-11-26 Telefunken Electronic Gmbh Verfahren zum epitaktischen abscheiden duenner einkristalliner halbleiterschichten aus pseudobinaerem halbleitermaterial auf einem einkristallinen substrat
DE3706512A1 (de) * 1987-02-28 1988-09-08 Philips Patentverwaltung Verfahren und vorrichtung zur herstellung epitaxialer schichten aus schmelzfluessigen loesungen
US5169608A (en) * 1989-09-26 1992-12-08 Mitsubishi Cable Industries, Ltd. Inorganic article for crystal growth and liquid-phase epitaxy apparatus using the same
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5264397A (en) * 1991-02-15 1993-11-23 The Whitaker Corporation Method for activating zinc in semiconductor devices
JP2885268B2 (ja) * 1994-08-30 1999-04-19 信越半導体株式会社 液相成長方法及び装置
CN112002786B (zh) * 2020-06-29 2021-10-08 华灿光电（浙江）有限公司 发光二极管外延片的制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US616821A (en) * 1898-12-27 Process of and apparatus for obtaining crystals
US2414680A (en) * 1944-07-29 1947-01-21 Polaroid Corp Process of crystal formation
US2414679A (en) * 1944-09-14 1947-01-21 Polaroid Corp Process of crystal formation
US2759803A (en) * 1950-05-22 1956-08-21 Gen Electric Co Ltd Methods for use in the growing of crystals
US2810366A (en) * 1954-04-14 1957-10-22 Technicon Int Ltd Receptacle carrier for tissue processing
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
NL6614999A (https=) * 1966-10-22 1968-04-23
US3463680A (en) * 1966-11-25 1969-08-26 Massachusetts Inst Technology Solution growth of epitaxial layers of semiconductor material
JPS53271B1 (https=) * 1971-03-05 1978-01-06
US3765959A (en) * 1971-07-30 1973-10-16 Tokyo Shibaura Electric Co Method for the liquid phase epitaxial growth of semiconductor crystals
JPS5342230B2 (https=) * 1972-10-19 1978-11-09

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3315794A1 (de) * 1983-04-30 1984-10-31 Telefunken electronic GmbH, 7100 Heilbronn Vorrichtung zur fluessigphasenepitaxie

Also Published As

Publication number Publication date
NL7502495A (nl) 1975-09-03
DE2508121C3 (de) 1980-08-14
DE2508121A1 (de) 1975-09-04
US3996891A (en) 1976-12-14
CA1051325A (en) 1979-03-27
DE2508121B2 (de) 1979-12-06
JPS50119566A (https=) 1975-09-19
FR2280202B1 (https=) 1978-12-29
GB1494254A (en) 1977-12-07

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Legal Events

Date Code Title Description
ST Notification of lapse