DE2507148A1 - Inverser planartransistor - Google Patents
Inverser planartransistorInfo
- Publication number
- DE2507148A1 DE2507148A1 DE19752507148 DE2507148A DE2507148A1 DE 2507148 A1 DE2507148 A1 DE 2507148A1 DE 19752507148 DE19752507148 DE 19752507148 DE 2507148 A DE2507148 A DE 2507148A DE 2507148 A1 DE2507148 A1 DE 2507148A1
- Authority
- DE
- Germany
- Prior art keywords
- base zone
- planar transistor
- zone
- schottky contact
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000003874 inverse correlation nuclear magnetic resonance spectroscopy Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000035515 penetration Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7327—Inverse vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752507148 DE2507148A1 (de) | 1975-02-19 | 1975-02-19 | Inverser planartransistor |
GB51227/75A GB1495864A (en) | 1975-02-19 | 1975-12-15 | Inverse planar transistors |
FR7603632A FR2301924A1 (fr) | 1975-02-19 | 1976-02-10 | Transistor planar inverse |
IT20063/76A IT1055195B (it) | 1975-02-19 | 1976-02-11 | Transistore planare inverso |
JP51016881A JPS51107778A (ja) | 1975-02-19 | 1976-02-18 | |
US05/749,438 US4107719A (en) | 1975-02-19 | 1976-12-10 | Inverse planar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752507148 DE2507148A1 (de) | 1975-02-19 | 1975-02-19 | Inverser planartransistor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2507148A1 true DE2507148A1 (de) | 1976-09-02 |
Family
ID=5939287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19752507148 Ceased DE2507148A1 (de) | 1975-02-19 | 1975-02-19 | Inverser planartransistor |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS51107778A (ja) |
DE (1) | DE2507148A1 (ja) |
FR (1) | FR2301924A1 (ja) |
GB (1) | GB1495864A (ja) |
IT (1) | IT1055195B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5276887A (en) * | 1975-12-22 | 1977-06-28 | Fujitsu Ltd | Semiconductor device |
JPS5267275A (en) * | 1976-10-08 | 1977-06-03 | Sony Corp | Semiconductor unit |
EP2180517A1 (en) * | 2008-10-24 | 2010-04-28 | Epcos Ag | Pnp bipolar transistor with lateral collector and method of production |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2032201A1 (de) * | 1969-06-30 | 1971-01-21 | International Business Machines Corp , Armonk, NY (V St A ) | Integnerbare Planarstruktur eines Transistors, insbesondere fur integrier te Schaltungen verwendbarer Schottky Sperr schicht Transistor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4911659U (ja) * | 1972-05-09 | 1974-01-31 |
-
1975
- 1975-02-19 DE DE19752507148 patent/DE2507148A1/de not_active Ceased
- 1975-12-15 GB GB51227/75A patent/GB1495864A/en not_active Expired
-
1976
- 1976-02-10 FR FR7603632A patent/FR2301924A1/fr active Granted
- 1976-02-11 IT IT20063/76A patent/IT1055195B/it active
- 1976-02-18 JP JP51016881A patent/JPS51107778A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2032201A1 (de) * | 1969-06-30 | 1971-01-21 | International Business Machines Corp , Armonk, NY (V St A ) | Integnerbare Planarstruktur eines Transistors, insbesondere fur integrier te Schaltungen verwendbarer Schottky Sperr schicht Transistor |
Non-Patent Citations (4)
Title |
---|
DE-Z.: Neues an der Technik, Nr. 4, Juli 1969, S. 3 * |
US-Z.: Electronics, Bd. 42, Nr. 15, 1969, S. 74-80 * |
US-Z.: IEEE Transactions on Electron Devices, Bd. 21, 1974, Nr. 4, S. 273-278 * |
US-Z.: Solid State Electronics, Bd. 11, 1968, Nr. 6, S. 613-619 * |
Also Published As
Publication number | Publication date |
---|---|
FR2301924B1 (ja) | 1982-04-23 |
IT1055195B (it) | 1981-12-21 |
JPS51107778A (ja) | 1976-09-24 |
FR2301924A1 (fr) | 1976-09-17 |
GB1495864A (en) | 1977-12-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8131 | Rejection |