DE2505574A1 - Schutzschaltung fuer integrierte schaltungen - Google Patents
Schutzschaltung fuer integrierte schaltungenInfo
- Publication number
- DE2505574A1 DE2505574A1 DE19752505574 DE2505574A DE2505574A1 DE 2505574 A1 DE2505574 A1 DE 2505574A1 DE 19752505574 DE19752505574 DE 19752505574 DE 2505574 A DE2505574 A DE 2505574A DE 2505574 A1 DE2505574 A1 DE 2505574A1
- Authority
- DE
- Germany
- Prior art keywords
- area
- diodes
- diode
- junction
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title claims description 15
- 230000000903 blocking effect Effects 0.000 claims description 16
- 230000002441 reversible effect Effects 0.000 claims description 14
- 230000005669 field effect Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 description 21
- 239000000758 substrate Substances 0.000 description 17
- 230000015556 catabolic process Effects 0.000 description 10
- 239000012212 insulator Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44107074A | 1974-02-11 | 1974-02-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2505574A1 true DE2505574A1 (de) | 1975-08-14 |
Family
ID=23751378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752505574 Pending DE2505574A1 (de) | 1974-02-11 | 1975-02-10 | Schutzschaltung fuer integrierte schaltungen |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS50116182A (enrdf_load_stackoverflow) |
| DE (1) | DE2505574A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2260869A1 (enrdf_load_stackoverflow) |
| NL (1) | NL7501240A (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54155344U (enrdf_load_stackoverflow) * | 1978-04-21 | 1979-10-29 | ||
| JPS5531354U (enrdf_load_stackoverflow) * | 1978-08-18 | 1980-02-29 | ||
| JPS5543864A (en) * | 1978-09-25 | 1980-03-27 | Hitachi Ltd | Mis semiconductor device |
| US4626882A (en) * | 1984-07-18 | 1986-12-02 | International Business Machines Corporation | Twin diode overvoltage protection structure |
| JPS61100954A (ja) * | 1984-10-22 | 1986-05-19 | Nec Corp | 半導体装置 |
| FR2628890B1 (fr) * | 1988-03-16 | 1990-08-24 | Bendix Electronics Sa | Dispositif de commande de l'alimentation electrique d'une charge en circuit integre de puissance " intelligent " |
| EP0624906B1 (en) * | 1993-05-13 | 2001-08-08 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Integrated structure circuit for the protection of power devices against overvoltages |
| EP0646964B1 (en) * | 1993-09-30 | 1999-12-15 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof |
| FR2802339B1 (fr) * | 1999-12-09 | 2002-03-01 | St Microelectronics Sa | Transistor mos durcis |
-
1975
- 1975-02-03 NL NL7501240A patent/NL7501240A/xx unknown
- 1975-02-07 FR FR7503827A patent/FR2260869A1/fr not_active Withdrawn
- 1975-02-10 DE DE19752505574 patent/DE2505574A1/de active Pending
- 1975-02-10 JP JP50017334A patent/JPS50116182A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS50116182A (enrdf_load_stackoverflow) | 1975-09-11 |
| NL7501240A (nl) | 1975-08-13 |
| FR2260869A1 (en) | 1975-09-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |