JPS50116182A - - Google Patents

Info

Publication number
JPS50116182A
JPS50116182A JP50017334A JP1733475A JPS50116182A JP S50116182 A JPS50116182 A JP S50116182A JP 50017334 A JP50017334 A JP 50017334A JP 1733475 A JP1733475 A JP 1733475A JP S50116182 A JPS50116182 A JP S50116182A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50017334A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50116182A publication Critical patent/JPS50116182A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP50017334A 1974-02-11 1975-02-10 Pending JPS50116182A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44107074A 1974-02-11 1974-02-11

Publications (1)

Publication Number Publication Date
JPS50116182A true JPS50116182A (ja) 1975-09-11

Family

ID=23751378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50017334A Pending JPS50116182A (ja) 1974-02-11 1975-02-10

Country Status (4)

Country Link
JP (1) JPS50116182A (ja)
DE (1) DE2505574A1 (ja)
FR (1) FR2260869A1 (ja)
NL (1) NL7501240A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155344U (ja) * 1978-04-21 1979-10-29
JPS5531354U (ja) * 1978-08-18 1980-02-29
JPS5543864A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Mis semiconductor device
JPS61100954A (ja) * 1984-10-22 1986-05-19 Nec Corp 半導体装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626882A (en) * 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure
FR2628890B1 (fr) * 1988-03-16 1990-08-24 Bendix Electronics Sa Dispositif de commande de l'alimentation electrique d'une charge en circuit integre de puissance " intelligent "
EP0624906B1 (en) * 1993-05-13 2001-08-08 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrated structure circuit for the protection of power devices against overvoltages
DE69327320T2 (de) * 1993-09-30 2000-05-31 Cons Ric Microelettronica Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung
FR2802339B1 (fr) * 1999-12-09 2002-03-01 St Microelectronics Sa Transistor mos durcis

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155344U (ja) * 1978-04-21 1979-10-29
JPS5531354U (ja) * 1978-08-18 1980-02-29
JPS5543864A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Mis semiconductor device
JPS61100954A (ja) * 1984-10-22 1986-05-19 Nec Corp 半導体装置
JPH0464187B2 (ja) * 1984-10-22 1992-10-14 Nippon Electric Co

Also Published As

Publication number Publication date
DE2505574A1 (de) 1975-08-14
FR2260869A1 (en) 1975-09-05
NL7501240A (nl) 1975-08-13

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