NL7501240A - Bescherming van een geintegreerde keten tegen ge spanningen. - Google Patents

Bescherming van een geintegreerde keten tegen ge spanningen.

Info

Publication number
NL7501240A
NL7501240A NL7501240A NL7501240A NL7501240A NL 7501240 A NL7501240 A NL 7501240A NL 7501240 A NL7501240 A NL 7501240A NL 7501240 A NL7501240 A NL 7501240A NL 7501240 A NL7501240 A NL 7501240A
Authority
NL
Netherlands
Prior art keywords
protection
chain against
integrated chain
against tensions
tensions
Prior art date
Application number
NL7501240A
Other languages
English (en)
Dutch (nl)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL7501240A publication Critical patent/NL7501240A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
NL7501240A 1974-02-11 1975-02-03 Bescherming van een geintegreerde keten tegen ge spanningen. NL7501240A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44107074A 1974-02-11 1974-02-11

Publications (1)

Publication Number Publication Date
NL7501240A true NL7501240A (nl) 1975-08-13

Family

ID=23751378

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7501240A NL7501240A (nl) 1974-02-11 1975-02-03 Bescherming van een geintegreerde keten tegen ge spanningen.

Country Status (4)

Country Link
JP (1) JPS50116182A (ja)
DE (1) DE2505574A1 (ja)
FR (1) FR2260869A1 (ja)
NL (1) NL7501240A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155344U (ja) * 1978-04-21 1979-10-29
JPS5531354U (ja) * 1978-08-18 1980-02-29
JPS5543864A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Mis semiconductor device
US4626882A (en) * 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure
JPS61100954A (ja) * 1984-10-22 1986-05-19 Nec Corp 半導体装置
FR2628890B1 (fr) * 1988-03-16 1990-08-24 Bendix Electronics Sa Dispositif de commande de l'alimentation electrique d'une charge en circuit integre de puissance " intelligent "
DE69330556T2 (de) * 1993-05-13 2002-05-16 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Integrierte Schaltungsstruktur für den Schutz von Leistungsvorrichtung gegen Überspannungen
DE69327320T2 (de) * 1993-09-30 2000-05-31 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung
FR2802339B1 (fr) 1999-12-09 2002-03-01 St Microelectronics Sa Transistor mos durcis

Also Published As

Publication number Publication date
JPS50116182A (ja) 1975-09-11
FR2260869A1 (en) 1975-09-05
DE2505574A1 (de) 1975-08-14

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