DE2502865A1 - Optoelektronisches halbleiterbauelement - Google Patents
Optoelektronisches halbleiterbauelementInfo
- Publication number
- DE2502865A1 DE2502865A1 DE19752502865 DE2502865A DE2502865A1 DE 2502865 A1 DE2502865 A1 DE 2502865A1 DE 19752502865 DE19752502865 DE 19752502865 DE 2502865 A DE2502865 A DE 2502865A DE 2502865 A1 DE2502865 A1 DE 2502865A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- semiconductor component
- optoelectronic semiconductor
- component according
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 230000005693 optoelectronics Effects 0.000 title claims description 15
- 230000004888 barrier function Effects 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 25
- 230000007704 transition Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 6
- 229910052792 caesium Inorganic materials 0.000 description 5
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 2
- 229910001942 caesium oxide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 210000003041 ligament Anatomy 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000036316 preload Effects 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB407174A GB1450627A (en) | 1974-01-29 | 1974-01-29 | Opto-electronic devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2502865A1 true DE2502865A1 (de) | 1975-07-31 |
Family
ID=9770194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752502865 Pending DE2502865A1 (de) | 1974-01-29 | 1975-01-24 | Optoelektronisches halbleiterbauelement |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2502865A1 (en, 2012) |
| FR (1) | FR2259442B3 (en, 2012) |
| GB (1) | GB1450627A (en, 2012) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4206002A (en) * | 1976-10-19 | 1980-06-03 | University Of Pittsburgh | Graded band gap multi-junction solar energy cell |
| EP0051133A3 (en) * | 1980-11-03 | 1983-03-16 | International Business Machines Corporation | Photon emitters and image converters comprising photon emitters |
| DE3917685A1 (de) * | 1989-05-31 | 1990-12-06 | Telefunken Electronic Gmbh | Halbleiter-bauelement |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3379441D1 (en) * | 1982-09-23 | 1989-04-20 | Secr Defence Brit | Infrared detectors |
| GB2127619B (en) * | 1982-09-23 | 1986-07-02 | Secr Defence | Infrared detectors |
| DE3441922C2 (de) * | 1984-11-16 | 1986-10-02 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Fotokathode für den Infrarotbereich |
| FR2591032B1 (fr) * | 1985-11-29 | 1988-01-08 | Thomson Csf | Photocathode a faible courant d'obscurite |
-
1974
- 1974-01-29 GB GB407174A patent/GB1450627A/en not_active Expired
-
1975
- 1975-01-24 DE DE19752502865 patent/DE2502865A1/de active Pending
- 1975-01-29 FR FR7502689A patent/FR2259442B3/fr not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4206002A (en) * | 1976-10-19 | 1980-06-03 | University Of Pittsburgh | Graded band gap multi-junction solar energy cell |
| EP0051133A3 (en) * | 1980-11-03 | 1983-03-16 | International Business Machines Corporation | Photon emitters and image converters comprising photon emitters |
| DE3917685A1 (de) * | 1989-05-31 | 1990-12-06 | Telefunken Electronic Gmbh | Halbleiter-bauelement |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2259442A1 (en, 2012) | 1975-08-22 |
| GB1450627A (en) | 1976-09-22 |
| FR2259442B3 (en, 2012) | 1977-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2546232C2 (de) | Halbleiter-Photozelle | |
| DE2711562C3 (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE69118052T2 (de) | Verbesserte elektronenübertragung in iii-v-halbleiterphotokathode | |
| DE69128750T2 (de) | Lichtempfindliches Bauelement | |
| DE69120849T2 (de) | Lawinenphotodiode | |
| DE2165006C3 (de) | Halbleiterlaser | |
| DE19740124A1 (de) | Photodiode | |
| DE69131410T2 (de) | Lawinenphotodiode | |
| DE2261527C2 (de) | Halbleiterkörper mit in einer vorgegebenen Richtung abwechselnd aufeinanderfolgenden n- und p-dotierten Zonen, Verfahren zu seiner Herstellung und Verwendungen des Halbleiterkörpers | |
| DE3136528A1 (de) | Halbleiter-lawinenfotodetektor | |
| DE2804568A1 (de) | Schnelles, transistoraehnliches halbleiterbauelement | |
| DE1045566B (de) | Kristallfotozelle | |
| DE3139351C2 (en, 2012) | ||
| DE3446972A1 (de) | Photoelektrischer halbleiter-wandler | |
| DE2803203A1 (de) | Phototransistor | |
| EP0003130B1 (de) | Halbleiter-Diode mit 3-Schichten-Struktur und ihre Verwendung | |
| DE3215083A1 (de) | Majoritaetsladungstraeger-photodetektor | |
| DE69218157T2 (de) | Lawinenfotodiode | |
| DE2456131A1 (de) | Fotosensible vorrichtung | |
| DE2730477A1 (de) | Fotoempfindliche halbleitervorrichtung | |
| DE3222848C2 (en, 2012) | ||
| DE2502865A1 (de) | Optoelektronisches halbleiterbauelement | |
| DE2311646A1 (de) | Elektrolumineszierende halbleiteranordnung | |
| DE2848925A1 (de) | Lawinen-photodiode mit heterouebergang | |
| DE3934998A1 (de) | Elektrisch wellenlaengenabstimmbarer halbleiterlaser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |