DE2502235A1 - Ladungskopplungs-halbleiteranordnung - Google Patents

Ladungskopplungs-halbleiteranordnung

Info

Publication number
DE2502235A1
DE2502235A1 DE19752502235 DE2502235A DE2502235A1 DE 2502235 A1 DE2502235 A1 DE 2502235A1 DE 19752502235 DE19752502235 DE 19752502235 DE 2502235 A DE2502235 A DE 2502235A DE 2502235 A1 DE2502235 A1 DE 2502235A1
Authority
DE
Germany
Prior art keywords
gate electrodes
layer
implanted
semiconductor substrate
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19752502235
Other languages
German (de)
English (en)
Other versions
DE2502235C2 (US06580902-20030617-M00005.png
Inventor
Gilbert Frank Amelio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23750782&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE2502235(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of DE2502235A1 publication Critical patent/DE2502235A1/de
Application granted granted Critical
Publication of DE2502235C2 publication Critical patent/DE2502235C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19752502235 1974-02-08 1975-01-21 Ladungskopplungs-halbleiteranordnung Granted DE2502235A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/440,930 US3931674A (en) 1974-02-08 1974-02-08 Self aligned CCD element including two levels of electrodes and method of manufacture therefor

Publications (2)

Publication Number Publication Date
DE2502235A1 true DE2502235A1 (de) 1975-08-14
DE2502235C2 DE2502235C2 (US06580902-20030617-M00005.png) 1989-09-14

Family

ID=23750782

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752502235 Granted DE2502235A1 (de) 1974-02-08 1975-01-21 Ladungskopplungs-halbleiteranordnung

Country Status (8)

Country Link
US (1) US3931674A (US06580902-20030617-M00005.png)
JP (1) JPS50115982A (US06580902-20030617-M00005.png)
CA (1) CA1101549A (US06580902-20030617-M00005.png)
DE (1) DE2502235A1 (US06580902-20030617-M00005.png)
FR (1) FR2260870B1 (US06580902-20030617-M00005.png)
GB (1) GB1481364A (US06580902-20030617-M00005.png)
HK (1) HK47580A (US06580902-20030617-M00005.png)
NL (1) NL7501244A (US06580902-20030617-M00005.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2746335A1 (de) * 1976-10-14 1978-04-27 Sony Corp Verfahren zur herstellung einer ladungsuebertragungsvorrichtung
DE2926334A1 (de) * 1978-06-29 1980-01-03 Raytheon Co Verfahren zur herstellung von halbleiterbauelementen, insbesondere von ladungsgekoppelten bauelementen

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027381A (en) * 1975-07-23 1977-06-07 Texas Instruments Incorporated Silicon gate ccd structure
US4035906A (en) * 1975-07-23 1977-07-19 Texas Instruments Incorporated Silicon gate CCD structure
US4024563A (en) * 1975-09-02 1977-05-17 Texas Instruments Incorporated Doped oxide buried channel charge-coupled device
US4040168A (en) * 1975-11-24 1977-08-09 Rca Corporation Fabrication method for a dual gate field-effect transistor
US4167017A (en) * 1976-06-01 1979-09-04 Texas Instruments Incorporated CCD structures with surface potential asymmetry beneath the phase electrodes
US4076557A (en) * 1976-08-19 1978-02-28 Honeywell Inc. Method for providing semiconductor devices
US4097885A (en) * 1976-10-15 1978-06-27 Fairchild Camera And Instrument Corp. Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material
JPS54149476A (en) * 1978-05-16 1979-11-22 Fujitsu Ltd Production of semiconductor device
US4231149A (en) * 1978-10-10 1980-11-04 Texas Instruments Incorporated Narrow band-gap semiconductor CCD imaging device and method of fabrication
US4377904A (en) * 1978-10-10 1983-03-29 Texas Instruments Incorporated Method of fabricating a narrow band-gap semiconductor CCD imaging device
US4692993A (en) * 1978-12-05 1987-09-15 Clark Marion D Schottky barrier charge coupled device (CCD) manufacture
JPS5966169A (ja) * 1982-10-07 1984-04-14 Matsushita Electric Ind Co Ltd Ｃｃｄおよびその製造方法
DD231896A1 (de) * 1984-08-21 1986-01-08 Werk Fernsehelektronik Veb Ladungsgekoppeltes bauelement (ccd)
NL8501339A (nl) * 1985-05-10 1986-12-01 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
FR2583576B1 (fr) * 1985-06-18 1988-09-16 Thomson Csf Dispositif a transfert de charge a grilles couplees
US5229313A (en) * 1989-09-29 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor device having multilayer structure
JPH04155842A (ja) * 1990-10-18 1992-05-28 Matsushita Electron Corp 電荷転送装置の製造方法
JP2642523B2 (ja) * 1991-03-19 1997-08-20 株式会社東芝 電荷結合素子を持つ半導体集積回路装置の製造方法
KR940000953Y1 (ko) * 1991-04-13 1994-02-25 금성일렉트론 주식회사 Ccd의 리셋트 게이트 구조
KR940009601B1 (ko) * 1991-09-14 1994-10-15 금성일렉트론 주식회사 전하전송장치의 제조방법
US5298448A (en) * 1992-12-18 1994-03-29 Eastman Kodak Company Method of making two-phase buried channel planar gate CCD
DE4438318C2 (de) * 1994-10-26 2001-06-13 Gold Star Electronics Zweiphasen-CCD und Verfahren zu dessen Herstellung
US5637891A (en) * 1994-12-08 1997-06-10 Goldstar Electron Co., Ltd. Charge coupled device having different insulators
US5460997A (en) * 1995-01-23 1995-10-24 Eastman Kodak Company Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes
US5556801A (en) * 1995-01-23 1996-09-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes
US5719075A (en) * 1995-07-31 1998-02-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal
US6227723B1 (en) * 1999-06-30 2001-05-08 Kyocera Corporation Substrate for mounting an optical component and optical module provided with the same
US7233350B2 (en) * 2002-01-05 2007-06-19 Candela Microsystems, Inc. Image sensor with interleaved image output
US6795117B2 (en) 2001-11-06 2004-09-21 Candela Microsystems, Inc. CMOS image sensor with noise cancellation
US8054357B2 (en) 2001-11-06 2011-11-08 Candela Microsystems, Inc. Image sensor with time overlapping image output
US20030193594A1 (en) * 2002-04-16 2003-10-16 Tay Hiok Nam Image sensor with processor controlled integration time
US7015960B2 (en) * 2003-03-18 2006-03-21 Candela Microsystems, Inc. Image sensor that uses a temperature sensor to compensate for dark current

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2253702A1 (de) * 1971-11-20 1973-05-24 Philips Nv Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte halbleiteranordnung
US3745647A (en) * 1970-10-07 1973-07-17 Rca Corp Fabrication of semiconductor devices
DE2316612A1 (de) * 1972-04-03 1973-10-18 Hitachi Ltd Ladungsuebertragungs-halbleitervorrichtungen
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
DE2314260A1 (de) * 1972-05-30 1973-12-13 Ibm Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735156A (en) * 1971-06-28 1973-05-22 Bell Telephone Labor Inc Reversible two-phase charge coupled devices
JPS4838982A (US06580902-20030617-M00005.png) * 1971-09-20 1973-06-08
US3796928A (en) * 1971-11-03 1974-03-12 Ibm Semiconductor shift register
US3852799A (en) * 1973-04-27 1974-12-03 Bell Telephone Labor Inc Buried channel charge coupled apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3745647A (en) * 1970-10-07 1973-07-17 Rca Corp Fabrication of semiconductor devices
DE2253702A1 (de) * 1971-11-20 1973-05-24 Philips Nv Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte halbleiteranordnung
DE2316612A1 (de) * 1972-04-03 1973-10-18 Hitachi Ltd Ladungsuebertragungs-halbleitervorrichtungen
DE2314260A1 (de) * 1972-05-30 1973-12-13 Ibm Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE International Electron Device Meeting Technical Digest, Washington DC, Dezember 1973, S. 24-26 *
US-Z.: IBM Techn. Discl. Bull., Bd. 14, 1971, Nr. 4, S. 1234 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2746335A1 (de) * 1976-10-14 1978-04-27 Sony Corp Verfahren zur herstellung einer ladungsuebertragungsvorrichtung
DE2926334A1 (de) * 1978-06-29 1980-01-03 Raytheon Co Verfahren zur herstellung von halbleiterbauelementen, insbesondere von ladungsgekoppelten bauelementen

Also Published As

Publication number Publication date
JPS50115982A (US06580902-20030617-M00005.png) 1975-09-10
DE2502235C2 (US06580902-20030617-M00005.png) 1989-09-14
FR2260870B1 (US06580902-20030617-M00005.png) 1980-11-07
GB1481364A (en) 1977-07-27
FR2260870A1 (US06580902-20030617-M00005.png) 1975-09-05
NL7501244A (nl) 1975-08-12
CA1101549A (en) 1981-05-19
US3931674A (en) 1976-01-13
HK47580A (en) 1980-09-05

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Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition