DE2447867A1 - Halbleiteranordnung - Google Patents
HalbleiteranordnungInfo
- Publication number
- DE2447867A1 DE2447867A1 DE19742447867 DE2447867A DE2447867A1 DE 2447867 A1 DE2447867 A1 DE 2447867A1 DE 19742447867 DE19742447867 DE 19742447867 DE 2447867 A DE2447867 A DE 2447867A DE 2447867 A1 DE2447867 A1 DE 2447867A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- base
- collector
- resistance
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000000926 separation method Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- 102100026459 POU domain, class 3, transcription factor 2 Human genes 0.000 description 1
- 101710133394 POU domain, class 3, transcription factor 2 Proteins 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7314466A NL7314466A (nl) | 1973-10-20 | 1973-10-20 | Halfgeleiderinrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2447867A1 true DE2447867A1 (de) | 1975-04-30 |
Family
ID=19819856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19742447867 Withdrawn DE2447867A1 (de) | 1973-10-20 | 1974-10-08 | Halbleiteranordnung |
Country Status (6)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2805008A1 (de) * | 1978-02-06 | 1979-08-09 | Siemens Ag | Hochfrequenztransistor |
| DE10044838A1 (de) * | 2000-09-11 | 2002-04-04 | Infineon Technologies Ag | Halbleiterbauelement |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4199775A (en) * | 1974-09-03 | 1980-04-22 | Bell Telephone Laboratories, Incorporated | Integrated circuit and method for fabrication thereof |
| DE10250204B8 (de) * | 2002-10-28 | 2008-09-11 | Infineon Technologies Ag | Verfahren zur Herstellung von Kollektorbereichen einer Transistorstruktur |
| CN107249772B (zh) | 2015-01-26 | 2019-06-14 | 新日铁住金株式会社 | 面形状不良产生或原因区域推断方法、装置及记录介质 |
-
1973
- 1973-10-20 NL NL7314466A patent/NL7314466A/xx unknown
-
1974
- 1974-10-08 DE DE19742447867 patent/DE2447867A1/de not_active Withdrawn
- 1974-10-17 CH CH1394674A patent/CH573664A5/xx not_active IP Right Cessation
- 1974-10-17 GB GB45075/74A patent/GB1480050A/en not_active Expired
- 1974-10-19 JP JP11991374A patent/JPS5513427B2/ja not_active Expired
- 1974-10-21 FR FR7435271A patent/FR2248615B1/fr not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2805008A1 (de) * | 1978-02-06 | 1979-08-09 | Siemens Ag | Hochfrequenztransistor |
| DE10044838A1 (de) * | 2000-09-11 | 2002-04-04 | Infineon Technologies Ag | Halbleiterbauelement |
| DE10044838C2 (de) * | 2000-09-11 | 2002-08-08 | Infineon Technologies Ag | Halbleiterbauelement und Verfahren zur Herstellung eines solchen |
| US6806555B2 (en) | 2000-09-11 | 2004-10-19 | Infineon Technologies Ag | Semiconductor component and method for fabricating it |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5513427B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-04-09 |
| GB1480050A (en) | 1977-07-20 |
| FR2248615B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-02-16 |
| CH573664A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-03-15 |
| FR2248615A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-05-16 |
| NL7314466A (nl) | 1975-04-22 |
| JPS5068783A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2266040C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE1944793C3 (de) | Verfahren zur Herstellung einer integrierten Halbleiteranordnung | |
| DE1284517B (de) | Integrierte Halbleiterschaltung | |
| DE1260029B (de) | Verfahren zum Herstellen von Halbleiterbauelementen auf einem Halbleitereinkristallgrundplaettchen | |
| DE2245063A1 (de) | Schaltungseinheit mit einem feldeffekttransistor und einem bipolaren transistor | |
| DE2016760A1 (de) | Halbleiteranordnung | |
| DE3214893A1 (de) | Halbleiteranordnung | |
| DE69320033T2 (de) | Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors | |
| DE1514855C3 (de) | Halbleitervorrichtung | |
| DE3526826A1 (de) | Statischer induktionstransistor und denselben enthaltenden integrierte schaltung | |
| DE1564218A1 (de) | Verfahren zur Herstellung von Transistoren | |
| DE2730373A1 (de) | Integrierte halbleiter-logikschaltung | |
| DE1764570B2 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung mit zueinander komplementären NPN- und PNP-Transistoren | |
| DE2913536C2 (de) | Halbleiteranordnung | |
| DE2833068A1 (de) | Integrierte halbleitervorrichtung | |
| DE3044444A1 (de) | "monolithisch integrierte gleichrichter-brueckenschaltung" | |
| DE2615553C3 (de) | Schwellenschaltung mit Hysterese | |
| DE2406807B2 (de) | Integrierte Halbleiterschaltung | |
| DE2953394T1 (de) | Dielectrically-isolated integrated circuit complementary transistors for high voltage use | |
| DE2447867A1 (de) | Halbleiteranordnung | |
| DE3709124C2 (de) | NPN-äquivalente Struktur mit erhöhter Durchschlagspannung | |
| DE69031610T2 (de) | Monolitisch integrierte Halbleitervorrichtung, die eine Kontrollschaltung und einen Leistungsteil mit vertikalem Stromfluss umfasst, und Verfahren zu ihrer Herstellung | |
| DE3005367C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE2101279C2 (de) | Integrierter, lateraler Transistor | |
| DE1764829B1 (de) | Planartransistor mit einem scheibenfoermigen halbleiter koerper |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8130 | Withdrawal |