DE2421492A1 - Photoaetzverfahren - Google Patents

Photoaetzverfahren

Info

Publication number
DE2421492A1
DE2421492A1 DE2421492A DE2421492A DE2421492A1 DE 2421492 A1 DE2421492 A1 DE 2421492A1 DE 2421492 A DE2421492 A DE 2421492A DE 2421492 A DE2421492 A DE 2421492A DE 2421492 A1 DE2421492 A1 DE 2421492A1
Authority
DE
Germany
Prior art keywords
layer
etching
organic compound
oxide layer
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2421492A
Other languages
German (de)
English (en)
Inventor
Mikio Ashikawa
Kikuo Douta
Norikazu Hashimoto
Hiroshi Yanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2421492A1 publication Critical patent/DE2421492A1/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
DE2421492A 1973-05-04 1974-05-03 Photoaetzverfahren Pending DE2421492A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48049097A JPS5218098B2 (cg-RX-API-DMAC10.html) 1973-05-04 1973-05-04

Publications (1)

Publication Number Publication Date
DE2421492A1 true DE2421492A1 (de) 1974-11-21

Family

ID=12821580

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2421492A Pending DE2421492A1 (de) 1973-05-04 1974-05-03 Photoaetzverfahren

Country Status (4)

Country Link
US (1) US3942982A (cg-RX-API-DMAC10.html)
JP (1) JPS5218098B2 (cg-RX-API-DMAC10.html)
DE (1) DE2421492A1 (cg-RX-API-DMAC10.html)
NL (1) NL7406079A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0040535A1 (en) * 1980-05-19 1981-11-25 Hitachi, Ltd. Method of forming a microscopic pattern, and a photoresist

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252611A (en) * 1975-10-24 1977-04-27 Keiji Suzuki Magnetic recording and playback apparatus
JPS53147800U (cg-RX-API-DMAC10.html) * 1977-04-26 1978-11-21
US4199649A (en) * 1978-04-12 1980-04-22 Bard Laboratories, Inc. Amorphous monomolecular surface coatings
JPS5779173A (en) * 1980-11-05 1982-05-18 Konishiroku Photo Ind Co Ltd Etching method for chromium film and chromium oxide film
JPS57111687A (en) * 1981-08-05 1982-07-12 Tokyo Shibaura Electric Co Printing dispensing device for ticket
DE3277343D1 (en) * 1982-06-14 1987-10-22 Ibm Deutschland Method of adjusting the edge angle in polysilicon
JPS6130035A (ja) * 1984-07-23 1986-02-12 Oki Electric Ind Co Ltd 半導体装置の製造方法
DE3823765A1 (de) * 1988-07-13 1990-01-18 Wacker Chemitronic Verfahren zur konservierung der oberflaeche von siliciumscheiben
EP0551105A3 (en) * 1992-01-07 1993-09-15 Fujitsu Limited Negative type composition for chemically amplified resist and process and apparatus of chemically amplified resist pattern
WO1998020395A1 (en) * 1996-11-08 1998-05-14 W.L. Gore & Associates, Inc. Method of applying dry film photoresist
JP2975917B2 (ja) * 1998-02-06 1999-11-10 株式会社半導体プロセス研究所 半導体装置の製造方法及び半導体装置の製造装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405017A (en) * 1965-02-26 1968-10-08 Hughes Aircraft Co Use of organosilicon subbing layer in photoresist method for obtaining fine patterns for microcircuitry
US3482977A (en) * 1966-02-11 1969-12-09 Sylvania Electric Prod Method of forming adherent masks on oxide coated semiconductor bodies
US3520683A (en) * 1967-05-19 1970-07-14 Bell Telephone Labor Inc Photoresist method and products produced thereby
US3586554A (en) * 1969-01-15 1971-06-22 Ibm Process for increasing photoresist adhesion to a semiconductor by treating the semiconductor with a disilylamide
US3716390A (en) * 1970-05-27 1973-02-13 Bell Telephone Labor Inc Photoresist method and products produced thereby

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0040535A1 (en) * 1980-05-19 1981-11-25 Hitachi, Ltd. Method of forming a microscopic pattern, and a photoresist

Also Published As

Publication number Publication date
JPS50765A (cg-RX-API-DMAC10.html) 1975-01-07
US3942982A (en) 1976-03-09
JPS5218098B2 (cg-RX-API-DMAC10.html) 1977-05-19
NL7406079A (cg-RX-API-DMAC10.html) 1974-11-06

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