DE2418662A1 - Verfahren zur bildung eines niederschlags aus der dampfphase auf einer vielzahl flacher substrate - Google Patents
Verfahren zur bildung eines niederschlags aus der dampfphase auf einer vielzahl flacher substrateInfo
- Publication number
- DE2418662A1 DE2418662A1 DE2418662A DE2418662A DE2418662A1 DE 2418662 A1 DE2418662 A1 DE 2418662A1 DE 2418662 A DE2418662 A DE 2418662A DE 2418662 A DE2418662 A DE 2418662A DE 2418662 A1 DE2418662 A1 DE 2418662A1
- Authority
- DE
- Germany
- Prior art keywords
- substrates
- substrate
- space
- gas mixture
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims description 127
- 238000000034 method Methods 0.000 title claims description 19
- 230000015572 biosynthetic process Effects 0.000 title claims description 4
- 238000001556 precipitation Methods 0.000 title description 17
- 238000004326 stimulated echo acquisition mode for imaging Methods 0.000 title 1
- 239000000203 mixture Substances 0.000 claims description 31
- 239000002244 precipitate Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 52
- 238000009792 diffusion process Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7315461A FR2227640B1 (enrdf_load_stackoverflow) | 1973-04-27 | 1973-04-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2418662A1 true DE2418662A1 (de) | 1974-11-21 |
Family
ID=9118616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2418662A Pending DE2418662A1 (de) | 1973-04-27 | 1974-04-18 | Verfahren zur bildung eines niederschlags aus der dampfphase auf einer vielzahl flacher substrate |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3922467A (enrdf_load_stackoverflow) |
| JP (1) | JPS5314464B2 (enrdf_load_stackoverflow) |
| AU (1) | AU6831374A (enrdf_load_stackoverflow) |
| BE (1) | BE814192A (enrdf_load_stackoverflow) |
| DE (1) | DE2418662A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2227640B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1460758A (enrdf_load_stackoverflow) |
| IT (1) | IT1010097B (enrdf_load_stackoverflow) |
| NL (1) | NL7405442A (enrdf_load_stackoverflow) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5242075A (en) * | 1975-09-29 | 1977-04-01 | Nippon Denso Co Ltd | Device for controlling gas atmosphere in semiconductor producing equip ment |
| US4279947A (en) * | 1975-11-25 | 1981-07-21 | Motorola, Inc. | Deposition of silicon nitride |
| SE432162B (sv) * | 1976-04-22 | 1984-03-19 | Fujitsu Ltd | Forfarande for att utifran en anga bringa en tunn film att tillvexa |
| FR2354810A1 (fr) * | 1976-06-14 | 1978-01-13 | Anvar | Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline |
| US4062318A (en) * | 1976-11-19 | 1977-12-13 | Rca Corporation | Apparatus for chemical vapor deposition |
| JPS53126271A (en) * | 1977-04-11 | 1978-11-04 | Kokusai Electric Co Ltd | Reduced pressure gaseous growing method and boarding jig |
| US4225647B1 (en) * | 1977-12-02 | 1995-05-09 | Richard A Parent | Articles having thin, continuous, impervious coatings |
| US4220116A (en) * | 1978-10-30 | 1980-09-02 | Burroughs Corporation | Reactant gas flow structure for a low pressure chemical vapor deposition system |
| NL7812388A (nl) * | 1978-12-21 | 1980-06-24 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
| US4401689A (en) * | 1980-01-31 | 1983-08-30 | Rca Corporation | Radiation heated reactor process for chemical vapor deposition on substrates |
| US4263872A (en) * | 1980-01-31 | 1981-04-28 | Rca Corporation | Radiation heated reactor for chemical vapor deposition on substrates |
| US4355974A (en) * | 1980-11-24 | 1982-10-26 | Asq Boats, Inc. | Wafer boat |
| KR830002904Y1 (ko) * | 1982-06-16 | 1983-12-13 | 채이순 | 차수용(遵水用)매드 |
| US4574093A (en) * | 1983-12-30 | 1986-03-04 | At&T Bell Laboratories | Deposition technique |
| US4640223A (en) * | 1984-07-24 | 1987-02-03 | Dozier Alfred R | Chemical vapor deposition reactor |
| JPS6223983A (ja) * | 1985-07-25 | 1987-01-31 | Anelva Corp | 真空化学反応装置 |
| US4834022A (en) * | 1985-11-08 | 1989-05-30 | Focus Semiconductor Systems, Inc. | CVD reactor and gas injection system |
| FR2604297B1 (fr) * | 1986-09-19 | 1989-03-10 | Pauleau Yves | Reacteur de depot de silicium dope |
| JPS63162862U (enrdf_load_stackoverflow) * | 1988-03-16 | 1988-10-24 | ||
| US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
| TWI322462B (en) * | 2001-09-29 | 2010-03-21 | Cree Inc | Apparatus for inverted multi-wafer mocvd fabrication |
| JP2012004408A (ja) * | 2010-06-18 | 2012-01-05 | Tokyo Electron Ltd | 支持体構造及び処理装置 |
| JP2015145317A (ja) * | 2014-01-31 | 2015-08-13 | ヤマハ株式会社 | カーボンナノチューブの製造装置 |
| JP2015185750A (ja) * | 2014-03-25 | 2015-10-22 | 東京エレクトロン株式会社 | 真空処理装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3409483A (en) * | 1964-05-01 | 1968-11-05 | Texas Instruments Inc | Selective deposition of semiconductor materials |
| US3816166A (en) * | 1970-03-11 | 1974-06-11 | Philips Corp | Vapor depositing method |
| US3678893A (en) * | 1970-05-01 | 1972-07-25 | Stewart Warner Corp | Improved device for supporting semiconductor wafers |
-
1973
- 1973-04-27 FR FR7315461A patent/FR2227640B1/fr not_active Expired
-
1974
- 1974-04-18 DE DE2418662A patent/DE2418662A1/de active Pending
- 1974-04-23 NL NL7405442A patent/NL7405442A/xx not_active Application Discontinuation
- 1974-04-24 GB GB1788974A patent/GB1460758A/en not_active Expired
- 1974-04-24 IT IT21909/74A patent/IT1010097B/it active
- 1974-04-25 BE BE143618A patent/BE814192A/xx unknown
- 1974-04-26 US US464574A patent/US3922467A/en not_active Expired - Lifetime
- 1974-04-26 AU AU68313/74A patent/AU6831374A/en not_active Expired
- 1974-04-26 JP JP4671574A patent/JPS5314464B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5314464B2 (enrdf_load_stackoverflow) | 1978-05-17 |
| US3922467A (en) | 1975-11-25 |
| AU6831374A (en) | 1975-10-30 |
| FR2227640B1 (enrdf_load_stackoverflow) | 1977-12-30 |
| GB1460758A (en) | 1977-01-06 |
| JPS5016476A (enrdf_load_stackoverflow) | 1975-02-21 |
| BE814192A (fr) | 1974-10-25 |
| IT1010097B (it) | 1977-01-10 |
| NL7405442A (enrdf_load_stackoverflow) | 1974-10-29 |
| FR2227640A1 (enrdf_load_stackoverflow) | 1974-11-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHW | Rejection |