JPS5016476A - - Google Patents

Info

Publication number
JPS5016476A
JPS5016476A JP49046715A JP4671574A JPS5016476A JP S5016476 A JPS5016476 A JP S5016476A JP 49046715 A JP49046715 A JP 49046715A JP 4671574 A JP4671574 A JP 4671574A JP S5016476 A JPS5016476 A JP S5016476A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49046715A
Other languages
Japanese (ja)
Other versions
JPS5314464B2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5016476A publication Critical patent/JPS5016476A/ja
Publication of JPS5314464B2 publication Critical patent/JPS5314464B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP4671574A 1973-04-27 1974-04-26 Expired JPS5314464B2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7315461A FR2227640B1 (enrdf_load_stackoverflow) 1973-04-27 1973-04-27

Publications (2)

Publication Number Publication Date
JPS5016476A true JPS5016476A (enrdf_load_stackoverflow) 1975-02-21
JPS5314464B2 JPS5314464B2 (enrdf_load_stackoverflow) 1978-05-17

Family

ID=9118616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4671574A Expired JPS5314464B2 (enrdf_load_stackoverflow) 1973-04-27 1974-04-26

Country Status (9)

Country Link
US (1) US3922467A (enrdf_load_stackoverflow)
JP (1) JPS5314464B2 (enrdf_load_stackoverflow)
AU (1) AU6831374A (enrdf_load_stackoverflow)
BE (1) BE814192A (enrdf_load_stackoverflow)
DE (1) DE2418662A1 (enrdf_load_stackoverflow)
FR (1) FR2227640B1 (enrdf_load_stackoverflow)
GB (1) GB1460758A (enrdf_load_stackoverflow)
IT (1) IT1010097B (enrdf_load_stackoverflow)
NL (1) NL7405442A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126271A (en) * 1977-04-11 1978-11-04 Kokusai Electric Co Ltd Reduced pressure gaseous growing method and boarding jig
JPS5588321A (en) * 1978-12-21 1980-07-04 Philips Nv Method of fabricating semiconductor device
JPS5950722U (ja) * 1982-06-16 1984-04-04 「ちゅ」　利順 遮水用マツト
JPS6223983A (ja) * 1985-07-25 1987-01-31 Anelva Corp 真空化学反応装置
JPS63162862U (enrdf_load_stackoverflow) * 1988-03-16 1988-10-24
JP2015145317A (ja) * 2014-01-31 2015-08-13 ヤマハ株式会社 カーボンナノチューブの製造装置

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
US4279947A (en) * 1975-11-25 1981-07-21 Motorola, Inc. Deposition of silicon nitride
SE432162B (sv) * 1976-04-22 1984-03-19 Fujitsu Ltd Forfarande for att utifran en anga bringa en tunn film att tillvexa
FR2354810A1 (fr) * 1976-06-14 1978-01-13 Anvar Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition
US4225647B1 (en) * 1977-12-02 1995-05-09 Richard A Parent Articles having thin, continuous, impervious coatings
US4220116A (en) * 1978-10-30 1980-09-02 Burroughs Corporation Reactant gas flow structure for a low pressure chemical vapor deposition system
US4401689A (en) * 1980-01-31 1983-08-30 Rca Corporation Radiation heated reactor process for chemical vapor deposition on substrates
US4263872A (en) * 1980-01-31 1981-04-28 Rca Corporation Radiation heated reactor for chemical vapor deposition on substrates
US4355974A (en) * 1980-11-24 1982-10-26 Asq Boats, Inc. Wafer boat
US4574093A (en) * 1983-12-30 1986-03-04 At&T Bell Laboratories Deposition technique
US4640223A (en) * 1984-07-24 1987-02-03 Dozier Alfred R Chemical vapor deposition reactor
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
FR2604297B1 (fr) * 1986-09-19 1989-03-10 Pauleau Yves Reacteur de depot de silicium dope
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
TWI322462B (en) * 2001-09-29 2010-03-21 Cree Inc Apparatus for inverted multi-wafer mocvd fabrication
JP2012004408A (ja) * 2010-06-18 2012-01-05 Tokyo Electron Ltd 支持体構造及び処理装置
JP2015185750A (ja) * 2014-03-25 2015-10-22 東京エレクトロン株式会社 真空処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409483A (en) * 1964-05-01 1968-11-05 Texas Instruments Inc Selective deposition of semiconductor materials
US3816166A (en) * 1970-03-11 1974-06-11 Philips Corp Vapor depositing method
US3678893A (en) * 1970-05-01 1972-07-25 Stewart Warner Corp Improved device for supporting semiconductor wafers

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126271A (en) * 1977-04-11 1978-11-04 Kokusai Electric Co Ltd Reduced pressure gaseous growing method and boarding jig
JPS5588321A (en) * 1978-12-21 1980-07-04 Philips Nv Method of fabricating semiconductor device
JPS5950722U (ja) * 1982-06-16 1984-04-04 「ちゅ」　利順 遮水用マツト
JPS6223983A (ja) * 1985-07-25 1987-01-31 Anelva Corp 真空化学反応装置
JPS63162862U (enrdf_load_stackoverflow) * 1988-03-16 1988-10-24
JP2015145317A (ja) * 2014-01-31 2015-08-13 ヤマハ株式会社 カーボンナノチューブの製造装置

Also Published As

Publication number Publication date
JPS5314464B2 (enrdf_load_stackoverflow) 1978-05-17
DE2418662A1 (de) 1974-11-21
US3922467A (en) 1975-11-25
AU6831374A (en) 1975-10-30
FR2227640B1 (enrdf_load_stackoverflow) 1977-12-30
GB1460758A (en) 1977-01-06
BE814192A (fr) 1974-10-25
IT1010097B (it) 1977-01-10
NL7405442A (enrdf_load_stackoverflow) 1974-10-29
FR2227640A1 (enrdf_load_stackoverflow) 1974-11-22

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