DE2412170A1 - Verfahren zum epitaktischen niederschlagen von halbleitermaterial auf einem substrat - Google Patents
Verfahren zum epitaktischen niederschlagen von halbleitermaterial auf einem substratInfo
- Publication number
- DE2412170A1 DE2412170A1 DE2412170A DE2412170A DE2412170A1 DE 2412170 A1 DE2412170 A1 DE 2412170A1 DE 2412170 A DE2412170 A DE 2412170A DE 2412170 A DE2412170 A DE 2412170A DE 2412170 A1 DE2412170 A1 DE 2412170A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- semiconductor material
- epitaxial layer
- solution
- lattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims description 75
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 239000000463 material Substances 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 12
- 230000008021 deposition Effects 0.000 title description 9
- 239000013078 crystal Substances 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 25
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 23
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 10
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 10
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 10
- 229910005540 GaP Inorganic materials 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 238000004943 liquid phase epitaxy Methods 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/138—Roughened surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/964—Roughened surface
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00343911A US3821039A (en) | 1973-03-22 | 1973-03-22 | Method of epitaxially depositing a semiconductor material on a substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2412170A1 true DE2412170A1 (de) | 1974-10-03 |
Family
ID=23348215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2412170A Pending DE2412170A1 (de) | 1973-03-22 | 1974-03-14 | Verfahren zum epitaktischen niederschlagen von halbleitermaterial auf einem substrat |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3821039A (enExample) |
| JP (1) | JPS5339233B2 (enExample) |
| CA (1) | CA1022438A (enExample) |
| DE (1) | DE2412170A1 (enExample) |
| FR (1) | FR2222752B1 (enExample) |
| GB (1) | GB1457962A (enExample) |
| NL (1) | NL7403839A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7306004A (enExample) * | 1973-05-01 | 1974-11-05 | ||
| US3891478A (en) * | 1973-08-16 | 1975-06-24 | Rca Corp | Deposition of epitaxial layer from the liquid phase |
| US4028148A (en) * | 1974-12-20 | 1977-06-07 | Nippon Telegraph And Telephone Public Corporation | Method of epitaxially growing a laminate semiconductor layer in liquid phase |
| JPS5248949B2 (enExample) * | 1974-12-20 | 1977-12-13 | ||
| US4120706A (en) * | 1977-09-16 | 1978-10-17 | Harris Corporation | Heteroepitaxial deposition of gap on silicon substrates |
| US4412502A (en) * | 1981-06-25 | 1983-11-01 | Western Electric Co., Inc. | Apparatus for the elimination of edge growth in liquid phase epitaxy |
| US4390379A (en) * | 1981-06-25 | 1983-06-28 | Western Electric Company, Inc. | Elimination of edge growth in liquid phase epitaxy |
| USH557H (en) * | 1986-11-07 | 1988-12-06 | The United States Of America As Represented By The Department Of Energy | Epitaxial strengthening of crystals |
| US4830984A (en) * | 1987-08-19 | 1989-05-16 | Texas Instruments Incorporated | Method for heteroepitaxial growth using tensioning layer on rear substrate surface |
| US5362680A (en) * | 1992-08-18 | 1994-11-08 | Texas Instruments Incorporated | Technique for enhancing adhesion capability of heat spreaders in molded packages |
| US6399182B1 (en) | 2000-04-12 | 2002-06-04 | Cmc Wireless Components, Inc. | Die attachment utilizing grooved surfaces |
-
1973
- 1973-03-22 US US00343911A patent/US3821039A/en not_active Expired - Lifetime
-
1974
- 1974-03-14 DE DE2412170A patent/DE2412170A1/de active Pending
- 1974-03-18 CA CA195,179A patent/CA1022438A/en not_active Expired
- 1974-03-19 GB GB1203374A patent/GB1457962A/en not_active Expired
- 1974-03-20 FR FR7409469A patent/FR2222752B1/fr not_active Expired
- 1974-03-20 JP JP3214374A patent/JPS5339233B2/ja not_active Expired
- 1974-03-21 NL NL7403839A patent/NL7403839A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL7403839A (enExample) | 1974-09-24 |
| GB1457962A (en) | 1976-12-08 |
| JPS5027474A (enExample) | 1975-03-20 |
| FR2222752B1 (enExample) | 1978-02-10 |
| US3821039A (en) | 1974-06-28 |
| FR2222752A1 (enExample) | 1974-10-18 |
| CA1022438A (en) | 1977-12-13 |
| JPS5339233B2 (enExample) | 1978-10-20 |
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| DE3036364C2 (enExample) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |