DE2361172A1 - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- DE2361172A1 DE2361172A1 DE2361172A DE2361172A DE2361172A1 DE 2361172 A1 DE2361172 A1 DE 2361172A1 DE 2361172 A DE2361172 A DE 2361172A DE 2361172 A DE2361172 A DE 2361172A DE 2361172 A1 DE2361172 A1 DE 2361172A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- semiconductor
- conductivity type
- transistors
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 239000000758 substrate Substances 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 1
- 238000010276 construction Methods 0.000 claims 1
- 230000015654 memory Effects 0.000 description 7
- 230000003321 amplification Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/643—Combinations of non-inverted vertical BJTs and inverted vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Static Random-Access Memory (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47122518A JPS4979793A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-12-08 | 1972-12-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2361172A1 true DE2361172A1 (de) | 1974-06-12 |
Family
ID=14837823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2361172A Pending DE2361172A1 (de) | 1972-12-08 | 1973-12-07 | Halbleitervorrichtung |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4255671A (en) * | 1976-07-31 | 1981-03-10 | Nippon Gakki Seizo Kabushiki Kaisha | IIL Type semiconductor integrated circuit |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5199478A (ja) * | 1975-02-28 | 1976-09-02 | Hitachi Ltd | Handotaishusekikairo |
| JPS60136084A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体集積回路装置 |
| KR950005463B1 (ko) * | 1992-06-29 | 1995-05-24 | 재단법인한국전자통신연구소 | 에미터 커플드 논리 반도체 장치 |
-
1972
- 1972-12-08 JP JP47122518A patent/JPS4979793A/ja active Pending
-
1973
- 1973-10-31 FR FR7338798A patent/FR2210017B1/fr not_active Expired
- 1973-11-30 NL NL7316475A patent/NL7316475A/xx unknown
- 1973-12-07 DE DE2361172A patent/DE2361172A1/de active Pending
- 1973-12-07 GB GB5677073A patent/GB1451084A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4255671A (en) * | 1976-07-31 | 1981-03-10 | Nippon Gakki Seizo Kabushiki Kaisha | IIL Type semiconductor integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2210017B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-01-06 |
| FR2210017A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-07-05 |
| JPS4979793A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-08-01 |
| GB1451084A (en) | 1976-09-29 |
| NL7316475A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |