DE2264067A1 - Speicherschaltung - Google Patents

Speicherschaltung

Info

Publication number
DE2264067A1
DE2264067A1 DE2264067A DE2264067A DE2264067A1 DE 2264067 A1 DE2264067 A1 DE 2264067A1 DE 2264067 A DE2264067 A DE 2264067A DE 2264067 A DE2264067 A DE 2264067A DE 2264067 A1 DE2264067 A1 DE 2264067A1
Authority
DE
Germany
Prior art keywords
fet
mis
memory
column
drain electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE2264067A
Other languages
German (de)
English (en)
Inventor
Tadanori Yamaguchi
Hiroshi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2264067A1 publication Critical patent/DE2264067A1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE2264067A 1971-12-29 1972-12-29 Speicherschaltung Ceased DE2264067A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP133572A JPS568438B2 (enExample) 1971-12-29 1971-12-29

Publications (1)

Publication Number Publication Date
DE2264067A1 true DE2264067A1 (de) 1973-07-05

Family

ID=11498613

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2264067A Ceased DE2264067A1 (de) 1971-12-29 1972-12-29 Speicherschaltung

Country Status (5)

Country Link
JP (1) JPS568438B2 (enExample)
CA (1) CA986223A (enExample)
DE (1) DE2264067A1 (enExample)
GB (1) GB1419970A (enExample)
NL (1) NL7217793A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134739A (enExample) * 1974-04-15 1975-10-25
JPS5443634A (en) * 1977-09-13 1979-04-06 Nippon Telegr & Teleph Corp <Ntt> Memory erasing method
KR100821456B1 (ko) * 2000-08-14 2008-04-11 샌디스크 쓰리디 엘엘씨 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법

Also Published As

Publication number Publication date
JPS568438B2 (enExample) 1981-02-24
GB1419970A (en) 1975-12-31
NL7217793A (enExample) 1973-07-03
JPS4874128A (enExample) 1973-10-05
CA986223A (en) 1976-03-23

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Legal Events

Date Code Title Description
OD Request for examination
8131 Rejection