DE2255107A1 - Verfahren zum eindiffundieren von verunreinigungen in ein silizium-halbleitersubstrat - Google Patents
Verfahren zum eindiffundieren von verunreinigungen in ein silizium-halbleitersubstratInfo
- Publication number
- DE2255107A1 DE2255107A1 DE2255107A DE2255107A DE2255107A1 DE 2255107 A1 DE2255107 A1 DE 2255107A1 DE 2255107 A DE2255107 A DE 2255107A DE 2255107 A DE2255107 A DE 2255107A DE 2255107 A1 DE2255107 A1 DE 2255107A1
- Authority
- DE
- Germany
- Prior art keywords
- diffusion
- impurities
- polycrystalline silicon
- silicon
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46089701A JPS4855663A (https=) | 1971-11-10 | 1971-11-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2255107A1 true DE2255107A1 (de) | 1973-05-17 |
Family
ID=13978063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2255107A Pending DE2255107A1 (de) | 1971-11-10 | 1972-11-10 | Verfahren zum eindiffundieren von verunreinigungen in ein silizium-halbleitersubstrat |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4855663A (https=) |
| CH (1) | CH565452A5 (https=) |
| DE (1) | DE2255107A1 (https=) |
| GB (1) | GB1377699A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985004759A1 (en) * | 1984-04-09 | 1985-10-24 | American Telephone & Telegraph Company | Method of transferring impurities between differently doped semiconductor regions |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5728942B2 (https=) * | 1973-12-22 | 1982-06-19 | ||
| JPS50134365A (https=) * | 1974-04-09 | 1975-10-24 | ||
| JPS50159253A (https=) * | 1974-06-12 | 1975-12-23 | ||
| DE2439408A1 (de) * | 1974-08-16 | 1976-02-26 | Siemens Ag | Halbleiterbauelement |
| DE2449688C3 (de) * | 1974-10-18 | 1980-07-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper |
| JPS5153462A (en) * | 1974-11-05 | 1976-05-11 | Fujitsu Ltd | Handotaisochino seizohoho |
| JPS5154365A (en) * | 1974-11-06 | 1976-05-13 | Mitsubishi Electric Corp | Handotaisochino seizohoho |
| JPS5188174A (en) * | 1975-01-31 | 1976-08-02 | Handotaisochino seizohoho | |
| JPS5222887A (en) * | 1975-08-14 | 1977-02-21 | Matsushita Electronics Corp | Semiconductor unit manufacturing system |
| JPS58108767A (ja) * | 1981-12-22 | 1983-06-28 | Nec Corp | 半導体装置の製造方法 |
-
1971
- 1971-11-10 JP JP46089701A patent/JPS4855663A/ja active Pending
-
1972
- 1972-10-31 GB GB5013572A patent/GB1377699A/en not_active Expired
- 1972-11-09 CH CH1630072A patent/CH565452A5/xx not_active IP Right Cessation
- 1972-11-10 DE DE2255107A patent/DE2255107A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985004759A1 (en) * | 1984-04-09 | 1985-10-24 | American Telephone & Telegraph Company | Method of transferring impurities between differently doped semiconductor regions |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1377699A (en) | 1974-12-18 |
| JPS4855663A (https=) | 1973-08-04 |
| CH565452A5 (https=) | 1975-08-15 |
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