GB1377699A - Method of making a semiconductor device and a semiconductor device when made thereby - Google Patents

Method of making a semiconductor device and a semiconductor device when made thereby

Info

Publication number
GB1377699A
GB1377699A GB5013572A GB5013572A GB1377699A GB 1377699 A GB1377699 A GB 1377699A GB 5013572 A GB5013572 A GB 5013572A GB 5013572 A GB5013572 A GB 5013572A GB 1377699 A GB1377699 A GB 1377699A
Authority
GB
United Kingdom
Prior art keywords
layer
substrate
diffusion
semiconductor device
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5013572A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suwa Seikosha KK filed Critical Suwa Seikosha KK
Publication of GB1377699A publication Critical patent/GB1377699A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB5013572A 1971-11-10 1972-10-31 Method of making a semiconductor device and a semiconductor device when made thereby Expired GB1377699A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46089701A JPS4855663A (https=) 1971-11-10 1971-11-10

Publications (1)

Publication Number Publication Date
GB1377699A true GB1377699A (en) 1974-12-18

Family

ID=13978063

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5013572A Expired GB1377699A (en) 1971-11-10 1972-10-31 Method of making a semiconductor device and a semiconductor device when made thereby

Country Status (4)

Country Link
JP (1) JPS4855663A (https=)
CH (1) CH565452A5 (https=)
DE (1) DE2255107A1 (https=)
GB (1) GB1377699A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728942B2 (https=) * 1973-12-22 1982-06-19
JPS50134365A (https=) * 1974-04-09 1975-10-24
JPS50159253A (https=) * 1974-06-12 1975-12-23
DE2439408A1 (de) * 1974-08-16 1976-02-26 Siemens Ag Halbleiterbauelement
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
JPS5153462A (en) * 1974-11-05 1976-05-11 Fujitsu Ltd Handotaisochino seizohoho
JPS5154365A (en) * 1974-11-06 1976-05-13 Mitsubishi Electric Corp Handotaisochino seizohoho
JPS5188174A (en) * 1975-01-31 1976-08-02 Handotaisochino seizohoho
JPS5222887A (en) * 1975-08-14 1977-02-21 Matsushita Electronics Corp Semiconductor unit manufacturing system
JPS58108767A (ja) * 1981-12-22 1983-06-28 Nec Corp 半導体装置の製造方法
US4549914A (en) * 1984-04-09 1985-10-29 At&T Bell Laboratories Integrated circuit contact technique

Also Published As

Publication number Publication date
DE2255107A1 (de) 1973-05-17
JPS4855663A (https=) 1973-08-04
CH565452A5 (https=) 1975-08-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years