DE2253411C3 - Verfahren zum Herstellen von aus Halbleitermaterial bestehenden, direkt beheizbaren Hohlkörpern für Diffusionszwecke - Google Patents
Verfahren zum Herstellen von aus Halbleitermaterial bestehenden, direkt beheizbaren Hohlkörpern für DiffusionszweckeInfo
- Publication number
- DE2253411C3 DE2253411C3 DE2253411A DE2253411A DE2253411C3 DE 2253411 C3 DE2253411 C3 DE 2253411C3 DE 2253411 A DE2253411 A DE 2253411A DE 2253411 A DE2253411 A DE 2253411A DE 2253411 C3 DE2253411 C3 DE 2253411C3
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor material
- diffusion
- tube
- carrier body
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 239000000463 material Substances 0.000 title claims description 40
- 238000009792 diffusion process Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 9
- 238000000151 deposition Methods 0.000 claims description 11
- 229910002804 graphite Inorganic materials 0.000 description 18
- 239000010439 graphite Substances 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 17
- 239000010453 quartz Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000251730 Chondrichthyes Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- RTCGUJFWSLMVSH-UHFFFAOYSA-N chloroform;silicon Chemical compound [Si].ClC(Cl)Cl RTCGUJFWSLMVSH-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/073—Hollow body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S264/00—Plastic and nonmetallic article shaping or treating: processes
- Y10S264/57—Processes of forming layered products
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2253411A DE2253411C3 (de) | 1972-10-31 | 1972-10-31 | Verfahren zum Herstellen von aus Halbleitermaterial bestehenden, direkt beheizbaren Hohlkörpern für Diffusionszwecke |
| NL7311932A NL7311932A (enExample) | 1972-10-31 | 1973-08-30 | |
| GB4720673A GB1406956A (en) | 1972-10-31 | 1973-10-10 | Production of electrically directly heatable hollow bodies of semiconductor material |
| JP48116714A JPS5135829B2 (enExample) | 1972-10-31 | 1973-10-17 | |
| FR7337547A FR2204459B1 (enExample) | 1972-10-31 | 1973-10-22 | |
| IT30619/73A IT998996B (it) | 1972-10-31 | 1973-10-26 | Procedimento per fabbricare oggetti cavi costituiti di materiale semi conduttore riscaldabili direttamente per scopi di diffusione |
| US410758A US3899557A (en) | 1972-10-31 | 1973-10-29 | Hollow semiconductor bodies and method of producing the same |
| SE7314837A SE396700B (sv) | 1972-10-31 | 1973-10-31 | Sett att framstella av halvledarmaterial bestaende direkt upphettbara halkroppar for diffusionsendamal |
| BE137329A BE806822A (fr) | 1972-10-31 | 1973-10-31 | Procede de fabrication de corps creux en matiere semi-conductrice a chauffage direct utilises a des fins de diffusion |
| US05/530,667 US3962670A (en) | 1972-10-31 | 1974-12-09 | Heatable hollow semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2253411A DE2253411C3 (de) | 1972-10-31 | 1972-10-31 | Verfahren zum Herstellen von aus Halbleitermaterial bestehenden, direkt beheizbaren Hohlkörpern für Diffusionszwecke |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2253411A1 DE2253411A1 (de) | 1974-05-02 |
| DE2253411B2 DE2253411B2 (de) | 1977-10-06 |
| DE2253411C3 true DE2253411C3 (de) | 1978-06-08 |
Family
ID=5860540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2253411A Expired DE2253411C3 (de) | 1972-10-31 | 1972-10-31 | Verfahren zum Herstellen von aus Halbleitermaterial bestehenden, direkt beheizbaren Hohlkörpern für Diffusionszwecke |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3899557A (enExample) |
| JP (1) | JPS5135829B2 (enExample) |
| BE (1) | BE806822A (enExample) |
| DE (1) | DE2253411C3 (enExample) |
| FR (1) | FR2204459B1 (enExample) |
| GB (1) | GB1406956A (enExample) |
| IT (1) | IT998996B (enExample) |
| NL (1) | NL7311932A (enExample) |
| SE (1) | SE396700B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2554399C3 (de) * | 1975-12-03 | 1979-09-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von aus Silicium oder Siliciumcarbid bestehenden, direkt-beheizbaren Rohren |
| DE2618398C3 (de) * | 1976-04-27 | 1978-10-19 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur kontinuierlichen Herstellung von Siliciumstäben oder -rohren |
| US4253863A (en) * | 1977-06-07 | 1981-03-03 | International Telephone And Telegraph Corporation | Apparatus for mass producing fiber optic preforms and optic fibers |
| US4276072A (en) * | 1977-06-07 | 1981-06-30 | International Telephone And Telegraph Corporation | Optical fiber fabrication |
| DE2843261C2 (de) * | 1978-10-04 | 1983-07-28 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Verfahren zum Wärmebehandeln von Halbleiterbauelementen |
| JPS5842126B2 (ja) * | 1980-10-31 | 1983-09-17 | 鐘淵化学工業株式会社 | アモルファスシリコンの製造方法 |
| US4981102A (en) * | 1984-04-12 | 1991-01-01 | Ethyl Corporation | Chemical vapor deposition reactor and process |
| DE3544812A1 (de) * | 1985-12-18 | 1987-06-25 | Heraeus Schott Quarzschmelze | Doppelwand-quarzglasrohr fuer die durchfuehrung halbleitertechnologischer prozesse |
| US5466480A (en) * | 1993-11-12 | 1995-11-14 | University Of Florida | Method for making an NMR coil |
| US6464912B1 (en) | 1999-01-06 | 2002-10-15 | Cvd, Incorporated | Method for producing near-net shape free standing articles by chemical vapor deposition |
| DE102007041803A1 (de) * | 2007-08-30 | 2009-03-05 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab |
| DE102016222945A1 (de) * | 2016-11-21 | 2018-05-24 | Volkswagen Aktiengesellschaft | Anordnung von zylinderförmigen Bauteilen in einer Beschichtungskammer zur Beschichtung der Innenflächen der zylinderförmigen Bauteile mittels Gasphasenabscheidung und Verfahren zur Beschichtung der Innenflächen von zylinderförmigen Bauteilen |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3438810A (en) * | 1966-04-04 | 1969-04-15 | Motorola Inc | Method of making silicon |
| DE2117933A1 (de) * | 1971-04-14 | 1972-10-19 | Siemens Ag | Verfahren zum Herstellen von Hohlkörpern aus Halbleitermaterial von beliebiger Länge |
-
1972
- 1972-10-31 DE DE2253411A patent/DE2253411C3/de not_active Expired
-
1973
- 1973-08-30 NL NL7311932A patent/NL7311932A/xx not_active Application Discontinuation
- 1973-10-10 GB GB4720673A patent/GB1406956A/en not_active Expired
- 1973-10-17 JP JP48116714A patent/JPS5135829B2/ja not_active Expired
- 1973-10-22 FR FR7337547A patent/FR2204459B1/fr not_active Expired
- 1973-10-26 IT IT30619/73A patent/IT998996B/it active
- 1973-10-29 US US410758A patent/US3899557A/en not_active Expired - Lifetime
- 1973-10-31 SE SE7314837A patent/SE396700B/xx unknown
- 1973-10-31 BE BE137329A patent/BE806822A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2253411B2 (de) | 1977-10-06 |
| JPS5135829B2 (enExample) | 1976-10-05 |
| FR2204459A1 (enExample) | 1974-05-24 |
| SE396700B (sv) | 1977-10-03 |
| IT998996B (it) | 1976-02-20 |
| FR2204459B1 (enExample) | 1977-03-11 |
| GB1406956A (en) | 1975-10-01 |
| JPS4982275A (enExample) | 1974-08-08 |
| BE806822A (fr) | 1974-02-15 |
| NL7311932A (enExample) | 1974-05-02 |
| DE2253411A1 (de) | 1974-05-02 |
| US3899557A (en) | 1975-08-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |