DE2248840A1 - Verfahren zum aufdampfen von duennen schichten aus einer fluessigen quelle - Google Patents
Verfahren zum aufdampfen von duennen schichten aus einer fluessigen quelleInfo
- Publication number
- DE2248840A1 DE2248840A1 DE19722248840 DE2248840A DE2248840A1 DE 2248840 A1 DE2248840 A1 DE 2248840A1 DE 19722248840 DE19722248840 DE 19722248840 DE 2248840 A DE2248840 A DE 2248840A DE 2248840 A1 DE2248840 A1 DE 2248840A1
- Authority
- DE
- Germany
- Prior art keywords
- vapor
- source
- chromium
- deposited
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 33
- 239000007788 liquid Substances 0.000 title claims description 19
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 49
- 229910052804 chromium Inorganic materials 0.000 claims description 47
- 239000011651 chromium Substances 0.000 claims description 47
- 238000001704 evaporation Methods 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 41
- 230000008020 evaporation Effects 0.000 claims description 39
- 238000002844 melting Methods 0.000 claims description 28
- 230000008018 melting Effects 0.000 claims description 25
- 238000007740 vapor deposition Methods 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- 229910052726 zirconium Inorganic materials 0.000 claims description 18
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 17
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 10
- 229910052749 magnesium Inorganic materials 0.000 claims description 10
- 239000011777 magnesium Substances 0.000 claims description 10
- 230000008016 vaporization Effects 0.000 claims description 6
- 238000009834 vaporization Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052729 chemical element Inorganic materials 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 16
- 239000012071 phase Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 8
- 239000011148 porous material Substances 0.000 description 8
- 230000005496 eutectics Effects 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010587 phase diagram Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- JUVGUSVNTPYZJL-UHFFFAOYSA-N chromium zirconium Chemical compound [Cr].[Zr] JUVGUSVNTPYZJL-UHFFFAOYSA-N 0.000 description 5
- 229910052845 zircon Inorganic materials 0.000 description 5
- FKSZLDCMQZJMFN-UHFFFAOYSA-N [Mg].[Pb] Chemical compound [Mg].[Pb] FKSZLDCMQZJMFN-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 4
- 229910000978 Pb alloy Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- UMUXBDSQTCDPJZ-UHFFFAOYSA-N chromium titanium Chemical compound [Ti].[Cr] UMUXBDSQTCDPJZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910000743 fusible alloy Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- -1 Zircon Chemical compound 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000009970 fire resistant effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18747871A | 1971-10-07 | 1971-10-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2248840A1 true DE2248840A1 (de) | 1973-04-12 |
Family
ID=22689163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19722248840 Pending DE2248840A1 (de) | 1971-10-07 | 1972-10-05 | Verfahren zum aufdampfen von duennen schichten aus einer fluessigen quelle |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS4848334A (enrdf_load_stackoverflow) |
DE (1) | DE2248840A1 (enrdf_load_stackoverflow) |
FR (1) | FR2156005A1 (enrdf_load_stackoverflow) |
GB (1) | GB1344972A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2496703A1 (fr) * | 1980-12-24 | 1982-06-25 | Labo Electronique Physique | Source d'evaporation de manganese sur substrat dans le vide, notamment sur substrat de couche photosensible dans un tube photo-electrique et procede de fabrication |
US7329436B2 (en) | 2004-11-17 | 2008-02-12 | United Technologies Corporation | Vapor deposition of dissimilar materials |
KR100611673B1 (ko) * | 2005-01-31 | 2006-08-10 | 삼성에스디아이 주식회사 | 박막 형성 방법 및 유기전계발광소자의 제조 방법 |
-
1972
- 1972-09-13 JP JP9135272A patent/JPS4848334A/ja active Pending
- 1972-09-20 GB GB4343172A patent/GB1344972A/en not_active Expired
- 1972-09-27 FR FR7235072A patent/FR2156005A1/fr not_active Withdrawn
- 1972-10-05 DE DE19722248840 patent/DE2248840A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS4848334A (enrdf_load_stackoverflow) | 1973-07-09 |
FR2156005A1 (enrdf_load_stackoverflow) | 1973-05-25 |
GB1344972A (en) | 1974-01-23 |
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