DE2247067C3 - Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen - Google Patents
Verwendung einer Poliersuspension zum schleierfreien Polieren von HalbleiteroberflächenInfo
- Publication number
- DE2247067C3 DE2247067C3 DE2247067A DE2247067A DE2247067C3 DE 2247067 C3 DE2247067 C3 DE 2247067C3 DE 2247067 A DE2247067 A DE 2247067A DE 2247067 A DE2247067 A DE 2247067A DE 2247067 C3 DE2247067 C3 DE 2247067C3
- Authority
- DE
- Germany
- Prior art keywords
- polishing
- semiconductor surfaces
- stain
- free
- suspension
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005498 polishing Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000000725 suspension Substances 0.000 title claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 150000004760 silicates Chemical class 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2247067A DE2247067C3 (de) | 1972-09-26 | 1972-09-26 | Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen |
| US400576A US3874129A (en) | 1972-09-26 | 1973-09-25 | Process for the production of haze-free semiconductor surfaces |
| FR7334267A FR2200772A5 (enExample) | 1972-09-26 | 1973-09-25 | |
| GB4512773A GB1418088A (en) | 1972-09-26 | 1973-09-26 | Polishing semi-conductor surfaces |
| JP10833473A JPS539910B2 (enExample) | 1972-09-26 | 1973-09-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2247067A DE2247067C3 (de) | 1972-09-26 | 1972-09-26 | Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2247067A1 DE2247067A1 (de) | 1974-04-04 |
| DE2247067B2 DE2247067B2 (de) | 1978-11-30 |
| DE2247067C3 true DE2247067C3 (de) | 1979-08-09 |
Family
ID=5857359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2247067A Expired DE2247067C3 (de) | 1972-09-26 | 1972-09-26 | Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3874129A (enExample) |
| JP (1) | JPS539910B2 (enExample) |
| DE (1) | DE2247067C3 (enExample) |
| FR (1) | FR2200772A5 (enExample) |
| GB (1) | GB1418088A (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2531431C3 (de) * | 1975-07-14 | 1979-03-01 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Poliermittel zur Herstellung schleierfreier Halbleiteroberflächen |
| DE2538855A1 (de) * | 1975-09-01 | 1977-03-10 | Wacker Chemitronic | Verfahren zur herstellung von schleierfreien halbleiteroberflaechen, insbesondere schleierfreien oberflaechen von (111)-orientiertem galliumarsenid |
| US4062658A (en) * | 1975-09-03 | 1977-12-13 | Xerox Corporation | Composition and method for repairing selenium photoreceptors |
| US4057939A (en) * | 1975-12-05 | 1977-11-15 | International Business Machines Corporation | Silicon wafer polishing |
| DE2608427C2 (de) * | 1976-03-01 | 1984-07-19 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum Aufkitten von Halbleiterscheiben |
| US4098031A (en) * | 1977-01-26 | 1978-07-04 | Bell Telephone Laboratories, Incorporated | Method for lapping semiconductor material |
| US4169337A (en) * | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
| JPS5597328A (en) * | 1978-12-30 | 1980-07-24 | Fuji Tokushiyu Shigiyou Kk | Device for stacking* opening and feeding bag for automatic filling |
| JPS5989818U (ja) * | 1982-12-07 | 1984-06-18 | 柳井紙工株式会社 | 包装容器 |
| DE3735158A1 (de) * | 1987-10-16 | 1989-05-03 | Wacker Chemitronic | Verfahren zum schleierfreien polieren von halbleiterscheiben |
| DE68920365T2 (de) * | 1988-06-28 | 1995-06-08 | Mitsubishi Material Silicon | Verfahren zur Polierung eines Halbleiter-Plättchens. |
| DE3823765A1 (de) * | 1988-07-13 | 1990-01-18 | Wacker Chemitronic | Verfahren zur konservierung der oberflaeche von siliciumscheiben |
| DE3939661A1 (de) * | 1989-11-30 | 1991-06-13 | Wacker Chemitronic | Verfahren zur steuerung des einbaues von kupfer in siliciumscheiben beim chemomechanischen polieren |
| US5816891A (en) * | 1995-06-06 | 1998-10-06 | Advanced Micro Devices, Inc. | Performing chemical mechanical polishing of oxides and metals using sequential removal on multiple polish platens to increase equipment throughput |
| RU2166423C2 (ru) * | 1998-10-21 | 2001-05-10 | Государственное унитарное предприятие "Научно-производственное предприятие "Пульсар" | Способ полирования пластин из керамических материалов |
| KR100324311B1 (ko) | 1998-10-26 | 2002-05-13 | 김영환 | 반도체소자의화학기계연마공정용슬러리제조방법 |
| JP4428473B2 (ja) * | 1999-01-18 | 2010-03-10 | 株式会社東芝 | 気相法無機酸化物粒子の含水固体状物質及び研磨用スラリーの製造方法 |
| SG108221A1 (en) * | 1999-03-15 | 2005-01-28 | Tokyo Magnetic Printing | Free abrasive slurry compositions and a grinding method using the same |
| DE19958077A1 (de) * | 1999-12-02 | 2001-06-13 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Politur von Halbleiterscheiben |
| DE10004578C1 (de) * | 2000-02-03 | 2001-07-26 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante |
| US20020115386A1 (en) * | 2000-05-25 | 2002-08-22 | Takashi Iijima | Method of grinding optical fiber connector |
| DE10058305A1 (de) | 2000-11-24 | 2002-06-06 | Wacker Siltronic Halbleitermat | Verfahren zur Oberflächenpolitur von Siliciumscheiben |
| US7601643B1 (en) * | 2001-08-30 | 2009-10-13 | Lsi Logic Corporation | Arrangement and method for fabricating a semiconductor wafer |
| US20040132308A1 (en) * | 2001-10-24 | 2004-07-08 | Psiloquest, Inc. | Corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces |
| JP4593064B2 (ja) * | 2002-09-30 | 2010-12-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| US9090799B2 (en) * | 2010-11-08 | 2015-07-28 | Fujimi Incorporated | Composition for polishing and method of polishing semiconductor substrate using same |
| KR102226501B1 (ko) | 2013-02-21 | 2021-03-11 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 연마물 제조 방법 |
| US10351732B2 (en) | 2013-03-19 | 2019-07-16 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and polishing composition preparation kit |
| US10717899B2 (en) | 2013-03-19 | 2020-07-21 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and polishing composition preparation kit |
| JP6292816B2 (ja) * | 2013-10-18 | 2018-03-14 | 東亞合成株式会社 | 半導体用濡れ剤及び研磨用組成物 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2375824A (en) * | 1941-10-16 | 1945-05-15 | Interchem Corp | Polishing composition |
| US2375823A (en) * | 1941-10-16 | 1945-05-15 | Interchem Corp | Polishing composition |
| US2375825A (en) * | 1941-10-16 | 1945-05-15 | Interchem Corp | Polishing compositions |
| US2427799A (en) * | 1946-09-14 | 1947-09-23 | William T Maloney | Zirconium silicate polishing material and process of preparing same |
| US3170273A (en) * | 1963-01-10 | 1965-02-23 | Monsanto Co | Process for polishing semiconductor materials |
| US3715842A (en) * | 1970-07-02 | 1973-02-13 | Tizon Chem Corp | Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces |
-
1972
- 1972-09-26 DE DE2247067A patent/DE2247067C3/de not_active Expired
-
1973
- 1973-09-25 US US400576A patent/US3874129A/en not_active Expired - Lifetime
- 1973-09-25 FR FR7334267A patent/FR2200772A5/fr not_active Expired
- 1973-09-26 GB GB4512773A patent/GB1418088A/en not_active Expired
- 1973-09-26 JP JP10833473A patent/JPS539910B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2200772A5 (enExample) | 1974-04-19 |
| DE2247067A1 (de) | 1974-04-04 |
| GB1418088A (en) | 1975-12-17 |
| JPS4976470A (enExample) | 1974-07-23 |
| JPS539910B2 (enExample) | 1978-04-10 |
| DE2247067B2 (de) | 1978-11-30 |
| US3874129A (en) | 1975-04-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |