FR2200772A5 - - Google Patents

Info

Publication number
FR2200772A5
FR2200772A5 FR7334267A FR7334267A FR2200772A5 FR 2200772 A5 FR2200772 A5 FR 2200772A5 FR 7334267 A FR7334267 A FR 7334267A FR 7334267 A FR7334267 A FR 7334267A FR 2200772 A5 FR2200772 A5 FR 2200772A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7334267A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Application granted granted Critical
Publication of FR2200772A5 publication Critical patent/FR2200772A5/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
FR7334267A 1972-09-26 1973-09-25 Expired FR2200772A5 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2247067A DE2247067C3 (de) 1972-09-26 1972-09-26 Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen

Publications (1)

Publication Number Publication Date
FR2200772A5 true FR2200772A5 (fr) 1974-04-19

Family

ID=5857359

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7334267A Expired FR2200772A5 (fr) 1972-09-26 1973-09-25

Country Status (5)

Country Link
US (1) US3874129A (fr)
JP (1) JPS539910B2 (fr)
DE (1) DE2247067C3 (fr)
FR (1) FR2200772A5 (fr)
GB (1) GB1418088A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2318499A1 (fr) * 1975-07-14 1977-02-11 Wacker Chemitronic Procede de superfinition des surfaces de semi-conducteurs
FR2322456A1 (fr) * 1975-09-01 1977-03-25 Wacker Chemitronic Procede de superfinition de surfaces de semi-conducteurs, en particulier de surfaces d'arseniure de gallium d'orientation (111)
EP0353518A1 (fr) * 1988-07-13 1990-02-07 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH Procédé de conservation de la surface de plaquettes de silicium

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062658A (en) * 1975-09-03 1977-12-13 Xerox Corporation Composition and method for repairing selenium photoreceptors
US4057939A (en) * 1975-12-05 1977-11-15 International Business Machines Corporation Silicon wafer polishing
DE2608427C2 (de) * 1976-03-01 1984-07-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Aufkitten von Halbleiterscheiben
US4098031A (en) * 1977-01-26 1978-07-04 Bell Telephone Laboratories, Incorporated Method for lapping semiconductor material
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
JPS5597328A (en) * 1978-12-30 1980-07-24 Fuji Tokushiyu Shigiyou Kk Device for stacking* opening and feeding bag for automatic filling
JPS5989818U (ja) * 1982-12-07 1984-06-18 柳井紙工株式会社 包装容器
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
DE68920365T2 (de) * 1988-06-28 1995-06-08 Mitsubishi Material Silicon Verfahren zur Polierung eines Halbleiter-Plättchens.
DE3939661A1 (de) * 1989-11-30 1991-06-13 Wacker Chemitronic Verfahren zur steuerung des einbaues von kupfer in siliciumscheiben beim chemomechanischen polieren
US5816891A (en) * 1995-06-06 1998-10-06 Advanced Micro Devices, Inc. Performing chemical mechanical polishing of oxides and metals using sequential removal on multiple polish platens to increase equipment throughput
KR100324311B1 (ko) 1998-10-26 2002-05-13 김영환 반도체소자의화학기계연마공정용슬러리제조방법
JP4428473B2 (ja) * 1999-01-18 2010-03-10 株式会社東芝 気相法無機酸化物粒子の含水固体状物質及び研磨用スラリーの製造方法
SG108221A1 (en) * 1999-03-15 2005-01-28 Tokyo Magnetic Printing Free abrasive slurry compositions and a grinding method using the same
DE19958077A1 (de) * 1999-12-02 2001-06-13 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Politur von Halbleiterscheiben
DE10004578C1 (de) * 2000-02-03 2001-07-26 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante
CA2348296A1 (fr) * 2000-05-25 2001-11-25 Narita Takehiko Methode de meulage de connecteur de fibres optiques
DE10058305A1 (de) * 2000-11-24 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Oberflächenpolitur von Siliciumscheiben
US7601643B1 (en) * 2001-08-30 2009-10-13 Lsi Logic Corporation Arrangement and method for fabricating a semiconductor wafer
US20040132308A1 (en) * 2001-10-24 2004-07-08 Psiloquest, Inc. Corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces
JP4593064B2 (ja) * 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
SG189534A1 (en) * 2010-11-08 2013-06-28 Fujimi Inc Composition for polishing and method of polishing semiconductor substrate using same
WO2014129408A1 (fr) 2013-02-21 2014-08-28 株式会社フジミインコーポレーテッド Composition de polissage et procédé de fabrication d'article poli
US10717899B2 (en) 2013-03-19 2020-07-21 Fujimi Incorporated Polishing composition, method for producing polishing composition and polishing composition preparation kit
WO2014148399A1 (fr) 2013-03-19 2014-09-25 株式会社フジミインコーポレーテッド Composition de polissage, procédé pour produire une composition de polissage, et kit pour préparer une composition de polissage
JP6292816B2 (ja) * 2013-10-18 2018-03-14 東亞合成株式会社 半導体用濡れ剤及び研磨用組成物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2375824A (en) * 1941-10-16 1945-05-15 Interchem Corp Polishing composition
US2375825A (en) * 1941-10-16 1945-05-15 Interchem Corp Polishing compositions
US2375823A (en) * 1941-10-16 1945-05-15 Interchem Corp Polishing composition
US2427799A (en) * 1946-09-14 1947-09-23 William T Maloney Zirconium silicate polishing material and process of preparing same
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2318499A1 (fr) * 1975-07-14 1977-02-11 Wacker Chemitronic Procede de superfinition des surfaces de semi-conducteurs
FR2322456A1 (fr) * 1975-09-01 1977-03-25 Wacker Chemitronic Procede de superfinition de surfaces de semi-conducteurs, en particulier de surfaces d'arseniure de gallium d'orientation (111)
EP0353518A1 (fr) * 1988-07-13 1990-02-07 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH Procédé de conservation de la surface de plaquettes de silicium

Also Published As

Publication number Publication date
DE2247067C3 (de) 1979-08-09
JPS4976470A (fr) 1974-07-23
US3874129A (en) 1975-04-01
DE2247067B2 (de) 1978-11-30
GB1418088A (en) 1975-12-17
DE2247067A1 (de) 1974-04-04
JPS539910B2 (fr) 1978-04-10

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Legal Events

Date Code Title Description
ST Notification of lapse