DE2242875A1 - Metallisierungs- und kontaktanordnung bei monolithischen halbleiteranordnungen und verfahren zu deren herstellung - Google Patents
Metallisierungs- und kontaktanordnung bei monolithischen halbleiteranordnungen und verfahren zu deren herstellungInfo
- Publication number
- DE2242875A1 DE2242875A1 DE19722242875 DE2242875A DE2242875A1 DE 2242875 A1 DE2242875 A1 DE 2242875A1 DE 19722242875 DE19722242875 DE 19722242875 DE 2242875 A DE2242875 A DE 2242875A DE 2242875 A1 DE2242875 A1 DE 2242875A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- silicon
- aluminum
- contact holes
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000001465 metallisation Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims description 116
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 51
- 229910052710 silicon Inorganic materials 0.000 claims description 51
- 239000010703 silicon Substances 0.000 claims description 51
- 229910052782 aluminium Inorganic materials 0.000 claims description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 41
- 239000004020 conductor Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims 3
- 239000000344 soap Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- -1 aluminum compound Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000010591 solubility diagram Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18892171A | 1971-10-13 | 1971-10-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2242875A1 true DE2242875A1 (de) | 1973-04-19 |
Family
ID=22695109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19722242875 Pending DE2242875A1 (de) | 1971-10-13 | 1972-08-31 | Metallisierungs- und kontaktanordnung bei monolithischen halbleiteranordnungen und verfahren zu deren herstellung |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5112990B2 (enrdf_load_stackoverflow) |
| DE (1) | DE2242875A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2156406A1 (enrdf_load_stackoverflow) |
| IT (1) | IT967610B (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4980981A (enrdf_load_stackoverflow) * | 1972-12-11 | 1974-08-05 | ||
| JPS5534704B2 (enrdf_load_stackoverflow) * | 1974-08-19 | 1980-09-09 | ||
| JPS53108278A (en) * | 1977-11-14 | 1978-09-20 | Nec Corp | Manufacture of semiconductor device |
| GB1595659A (en) * | 1978-05-25 | 1981-08-12 | Standard Telephones Cables Ltd | Providing conductive tracks on semiconductor devices |
-
1972
- 1972-08-31 DE DE19722242875 patent/DE2242875A1/de active Pending
- 1972-09-19 IT IT2937472A patent/IT967610B/it active
- 1972-09-22 JP JP9467372A patent/JPS5112990B2/ja not_active Expired
- 1972-10-11 FR FR7236787A patent/FR2156406A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| IT967610B (it) | 1974-03-11 |
| FR2156406A1 (en) | 1973-05-25 |
| JPS4847772A (enrdf_load_stackoverflow) | 1973-07-06 |
| FR2156406B1 (enrdf_load_stackoverflow) | 1975-03-28 |
| JPS5112990B2 (enrdf_load_stackoverflow) | 1976-04-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |