FR2156406A1 - Aluminium contact layer formation - on silicon semiconductors, withuout short circuiting the devices - Google Patents
Aluminium contact layer formation - on silicon semiconductors, withuout short circuiting the devicesInfo
- Publication number
- FR2156406A1 FR2156406A1 FR7236787A FR7236787A FR2156406A1 FR 2156406 A1 FR2156406 A1 FR 2156406A1 FR 7236787 A FR7236787 A FR 7236787A FR 7236787 A FR7236787 A FR 7236787A FR 2156406 A1 FR2156406 A1 FR 2156406A1
- Authority
- FR
- France
- Prior art keywords
- short circuiting
- withuout
- devices
- contact layer
- layer formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- 239000004411 aluminium Substances 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18892171A | 1971-10-13 | 1971-10-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2156406A1 true FR2156406A1 (en) | 1973-05-25 |
FR2156406B1 FR2156406B1 (enrdf_load_stackoverflow) | 1975-03-28 |
Family
ID=22695109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7236787A Granted FR2156406A1 (en) | 1971-10-13 | 1972-10-11 | Aluminium contact layer formation - on silicon semiconductors, withuout short circuiting the devices |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5112990B2 (enrdf_load_stackoverflow) |
DE (1) | DE2242875A1 (enrdf_load_stackoverflow) |
FR (1) | FR2156406A1 (enrdf_load_stackoverflow) |
IT (1) | IT967610B (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2426745A1 (fr) * | 1978-05-25 | 1979-12-21 | Itt | Procede de revetement metallique par depot sous forme de vapeurs, pour la formation de trajets conducteurs sur un corps semi-conducteur |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4980981A (enrdf_load_stackoverflow) * | 1972-12-11 | 1974-08-05 | ||
JPS5534704B2 (enrdf_load_stackoverflow) * | 1974-08-19 | 1980-09-09 | ||
JPS53108278A (en) * | 1977-11-14 | 1978-09-20 | Nec Corp | Manufacture of semiconductor device |
-
1972
- 1972-08-31 DE DE19722242875 patent/DE2242875A1/de active Pending
- 1972-09-19 IT IT2937472A patent/IT967610B/it active
- 1972-09-22 JP JP9467372A patent/JPS5112990B2/ja not_active Expired
- 1972-10-11 FR FR7236787A patent/FR2156406A1/fr active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2426745A1 (fr) * | 1978-05-25 | 1979-12-21 | Itt | Procede de revetement metallique par depot sous forme de vapeurs, pour la formation de trajets conducteurs sur un corps semi-conducteur |
Also Published As
Publication number | Publication date |
---|---|
IT967610B (it) | 1974-03-11 |
JPS4847772A (enrdf_load_stackoverflow) | 1973-07-06 |
FR2156406B1 (enrdf_load_stackoverflow) | 1975-03-28 |
DE2242875A1 (de) | 1973-04-19 |
JPS5112990B2 (enrdf_load_stackoverflow) | 1976-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |