DE2232274C2 - Statischer Halbleiterspeicher mit Feldeffekttransistoren - Google Patents
Statischer Halbleiterspeicher mit FeldeffekttransistorenInfo
- Publication number
- DE2232274C2 DE2232274C2 DE2232274A DE2232274A DE2232274C2 DE 2232274 C2 DE2232274 C2 DE 2232274C2 DE 2232274 A DE2232274 A DE 2232274A DE 2232274 A DE2232274 A DE 2232274A DE 2232274 C2 DE2232274 C2 DE 2232274C2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistors
- transistors
- transistor
- threshold voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title claims description 44
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 230000003068 static effect Effects 0.000 title claims description 5
- 230000015654 memory Effects 0.000 claims description 36
- 230000001419 dependent effect Effects 0.000 claims description 12
- 230000006870 function Effects 0.000 claims description 2
- 238000004088 simulation Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Static Random-Access Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Semiconductor Memories (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2232274A DE2232274C2 (de) | 1972-06-30 | 1972-06-30 | Statischer Halbleiterspeicher mit Feldeffekttransistoren |
| IT21886/73A IT981508B (it) | 1972-06-30 | 1973-03-21 | Struttura semiconduttrice a circuito integrato |
| GB2582573A GB1431205A (en) | 1972-06-30 | 1973-05-30 | Monolithic semiconductor circuit arrangement |
| JP6547173A JPS545937B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-06-30 | 1973-06-12 | |
| FR7324276*A FR2241929B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-06-30 | 1973-06-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2232274A DE2232274C2 (de) | 1972-06-30 | 1972-06-30 | Statischer Halbleiterspeicher mit Feldeffekttransistoren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2232274A1 DE2232274A1 (de) | 1974-01-31 |
| DE2232274C2 true DE2232274C2 (de) | 1982-05-06 |
Family
ID=5849362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2232274A Expired DE2232274C2 (de) | 1972-06-30 | 1972-06-30 | Statischer Halbleiterspeicher mit Feldeffekttransistoren |
Country Status (5)
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3970875A (en) * | 1974-11-21 | 1976-07-20 | International Business Machines Corporation | LSI chip compensator for process parameter variations |
| JPS54152845A (en) * | 1978-05-24 | 1979-12-01 | Hitachi Ltd | High dielectric strength mosfet circuit |
| DE2855844C2 (de) * | 1978-12-22 | 1984-06-07 | Texas Instruments Deutschland Gmbh, 8050 Freising | Schaltung für einen Verstärker mit einem Feldeffekttransistor |
| JPS5672530A (en) * | 1979-11-19 | 1981-06-16 | Nec Corp | Semiconductor circuit |
| US4394751A (en) * | 1980-10-23 | 1983-07-19 | Standard Microsystems Corporation | Low power storage cell |
| JPS5799765A (en) * | 1980-12-12 | 1982-06-21 | Fujitsu Ltd | Semiconductor resistance element |
| US4433252A (en) * | 1982-01-18 | 1984-02-21 | International Business Machines Corporation | Input signal responsive pulse generating and biasing circuit for integrated circuits |
| JPH0493997U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1990-12-21 | 1992-08-14 | ||
| JP3017871B2 (ja) * | 1991-01-02 | 2000-03-13 | テキサス インスツルメンツ インコーポレイテツド | Ｉｃデバイスに対するチップ上のバラツキ検知回路 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3508084A (en) * | 1967-10-06 | 1970-04-21 | Texas Instruments Inc | Enhancement-mode mos circuitry |
| JPS528660A (en) * | 1975-07-09 | 1977-01-22 | Hitachi Ltd | Anaerobic digestion of organic waste fluid |
-
1972
- 1972-06-30 DE DE2232274A patent/DE2232274C2/de not_active Expired
-
1973
- 1973-03-21 IT IT21886/73A patent/IT981508B/it active
- 1973-05-30 GB GB2582573A patent/GB1431205A/en not_active Expired
- 1973-06-12 JP JP6547173A patent/JPS545937B2/ja not_active Expired
- 1973-06-26 FR FR7324276*A patent/FR2241929B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2241929B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-06-18 |
| DE2232274A1 (de) | 1974-01-31 |
| IT981508B (it) | 1974-10-10 |
| GB1431205A (en) | 1976-04-07 |
| JPS545937B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-03-23 |
| FR2241929A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-03-21 |
| JPS4959541A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8126 | Change of the secondary classification | ||
| D2 | Grant after examination | ||
| 8339 | Ceased/non-payment of the annual fee |