IT981508B - Struttura semiconduttrice a circuito integrato - Google Patents

Struttura semiconduttrice a circuito integrato

Info

Publication number
IT981508B
IT981508B IT2188673A IT2188673A IT981508B IT 981508 B IT981508 B IT 981508B IT 2188673 A IT2188673 A IT 2188673A IT 2188673 A IT2188673 A IT 2188673A IT 981508 B IT981508 B IT 981508B
Authority
IT
Italy
Prior art keywords
integrated circuit
circuit structure
semiconductive integrated
semiconductive
integrated
Prior art date
Application number
IT2188673A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT981508B publication Critical patent/IT981508B/it

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
IT2188673A 1972-06-30 1973-03-21 Struttura semiconduttrice a circuito integrato IT981508B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722232274 DE2232274C2 (de) 1972-06-30 1972-06-30 Statischer Halbleiterspeicher mit Feldeffekttransistoren

Publications (1)

Publication Number Publication Date
IT981508B true IT981508B (it) 1974-10-10

Family

ID=5849362

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2188673A IT981508B (it) 1972-06-30 1973-03-21 Struttura semiconduttrice a circuito integrato

Country Status (5)

Country Link
JP (1) JPS545937B2 (it)
DE (1) DE2232274C2 (it)
FR (1) FR2241929B1 (it)
GB (1) GB1431205A (it)
IT (1) IT981508B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970875A (en) * 1974-11-21 1976-07-20 International Business Machines Corporation LSI chip compensator for process parameter variations
JPS54152845A (en) * 1978-05-24 1979-12-01 Hitachi Ltd High dielectric strength mosfet circuit
DE2855844C2 (de) * 1978-12-22 1984-06-07 Texas Instruments Deutschland Gmbh, 8050 Freising Schaltung für einen Verstärker mit einem Feldeffekttransistor
JPS5672530A (en) * 1979-11-19 1981-06-16 Nec Corp Semiconductor circuit
US4394751A (en) * 1980-10-23 1983-07-19 Standard Microsystems Corporation Low power storage cell
JPS5799765A (en) * 1980-12-12 1982-06-21 Fujitsu Ltd Semiconductor resistance element
JPS5813885A (ja) * 1981-07-15 1983-01-26 松下電工株式会社 木製ドア
US4433252A (en) * 1982-01-18 1984-02-21 International Business Machines Corporation Input signal responsive pulse generating and biasing circuit for integrated circuits
JPH0493997U (it) * 1990-12-21 1992-08-14
JP3017871B2 (ja) * 1991-01-02 2000-03-13 テキサス インスツルメンツ インコーポレイテツド Icデバイスに対するチップ上のバラツキ検知回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
JPS528660A (en) * 1975-07-09 1977-01-22 Hitachi Ltd Anaerobic digestion of organic waste fluid

Also Published As

Publication number Publication date
GB1431205A (en) 1976-04-07
DE2232274A1 (de) 1974-01-31
JPS545937B2 (it) 1979-03-23
FR2241929B1 (it) 1976-06-18
DE2232274C2 (de) 1982-05-06
FR2241929A1 (it) 1975-03-21
JPS4959541A (it) 1974-06-10

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