JPS545937B2 - - Google Patents

Info

Publication number
JPS545937B2
JPS545937B2 JP6547173A JP6547173A JPS545937B2 JP S545937 B2 JPS545937 B2 JP S545937B2 JP 6547173 A JP6547173 A JP 6547173A JP 6547173 A JP6547173 A JP 6547173A JP S545937 B2 JPS545937 B2 JP S545937B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6547173A
Other versions
JPS4959541A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4959541A publication Critical patent/JPS4959541A/ja
Publication of JPS545937B2 publication Critical patent/JPS545937B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
JP6547173A 1972-06-30 1973-06-12 Expired JPS545937B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722232274 DE2232274C2 (de) 1972-06-30 1972-06-30 Statischer Halbleiterspeicher mit Feldeffekttransistoren

Publications (2)

Publication Number Publication Date
JPS4959541A JPS4959541A (ja) 1974-06-10
JPS545937B2 true JPS545937B2 (ja) 1979-03-23

Family

ID=5849362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6547173A Expired JPS545937B2 (ja) 1972-06-30 1973-06-12

Country Status (5)

Country Link
JP (1) JPS545937B2 (ja)
DE (1) DE2232274C2 (ja)
FR (1) FR2241929B1 (ja)
GB (1) GB1431205A (ja)
IT (1) IT981508B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6338514B2 (ja) * 1981-07-15 1988-08-01 Matsushita Electric Works Ltd

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970875A (en) * 1974-11-21 1976-07-20 International Business Machines Corporation LSI chip compensator for process parameter variations
JPS54152845A (en) * 1978-05-24 1979-12-01 Hitachi Ltd High dielectric strength mosfet circuit
DE2855844C2 (de) * 1978-12-22 1984-06-07 Texas Instruments Deutschland Gmbh, 8050 Freising Schaltung für einen Verstärker mit einem Feldeffekttransistor
JPS5672530A (en) * 1979-11-19 1981-06-16 Nec Corp Semiconductor circuit
US4394751A (en) * 1980-10-23 1983-07-19 Standard Microsystems Corporation Low power storage cell
JPS5799765A (en) * 1980-12-12 1982-06-21 Fujitsu Ltd Semiconductor resistance element
US4433252A (en) * 1982-01-18 1984-02-21 International Business Machines Corporation Input signal responsive pulse generating and biasing circuit for integrated circuits
JPH0493997U (ja) * 1990-12-21 1992-08-14
JP3017871B2 (ja) * 1991-01-02 2000-03-13 テキサス インスツルメンツ インコーポレイテツド Ｉｃデバイスに対するチップ上のバラツキ検知回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528660A (en) * 1975-07-09 1977-01-22 Hitachi Ltd Anaerobic digestion of organic waste fluid

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528660A (en) * 1975-07-09 1977-01-22 Hitachi Ltd Anaerobic digestion of organic waste fluid

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6338514B2 (ja) * 1981-07-15 1988-08-01 Matsushita Electric Works Ltd

Also Published As

Publication number Publication date
JPS4959541A (ja) 1974-06-10
DE2232274C2 (de) 1982-05-06
GB1431205A (en) 1976-04-07
DE2232274A1 (de) 1974-01-31
IT981508B (it) 1974-10-10
FR2241929B1 (ja) 1976-06-18
FR2241929A1 (ja) 1975-03-21

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