DE2224468A1 - Verfahren zum aetzen von vorzugsweise glas- bzw. siliciumdioxydschichten - Google Patents
Verfahren zum aetzen von vorzugsweise glas- bzw. siliciumdioxydschichtenInfo
- Publication number
- DE2224468A1 DE2224468A1 DE19722224468 DE2224468A DE2224468A1 DE 2224468 A1 DE2224468 A1 DE 2224468A1 DE 19722224468 DE19722224468 DE 19722224468 DE 2224468 A DE2224468 A DE 2224468A DE 2224468 A1 DE2224468 A1 DE 2224468A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- glass
- carbon tetrafluoride
- plasma
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 42
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 11
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 title claims description 22
- 238000005530 etching Methods 0.000 title claims description 20
- 238000000576 coating method Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 14
- 210000002381 plasma Anatomy 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- -1 aluminum compound Chemical class 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14475371A | 1971-05-19 | 1971-05-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2224468A1 true DE2224468A1 (de) | 1973-01-18 |
Family
ID=22509973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19722224468 Pending DE2224468A1 (de) | 1971-05-19 | 1972-05-19 | Verfahren zum aetzen von vorzugsweise glas- bzw. siliciumdioxydschichten |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS535637B1 (fr) |
| DE (1) | DE2224468A1 (fr) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2632093A1 (de) * | 1975-09-04 | 1977-03-17 | Ibm | Verfahren zum herstellen von durchgehenden bohrungen |
| DE2946011A1 (de) * | 1978-11-20 | 1980-06-04 | Mitsubishi Metal Corp | Verfahren zur herstellung eines optischen hohlleiters |
| DE3343704A1 (de) * | 1983-12-02 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum aetzen von lochrasterplatten, insbesondere fuer plasma-kathoden-display |
| DE3642073C1 (en) * | 1986-12-10 | 1988-02-04 | Heidenhain Gmbh Dr Johannes | Process for etching alkali glass layers by reactive plasma etching |
| WO2008052528A3 (fr) * | 2006-10-30 | 2008-07-03 | Fhr Anlagenbau Gmbh | Procédé et dispositif de structuration de composants par recours à un matériau à base d'oxyde de silicium |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63129175A (ja) * | 1986-11-19 | 1988-06-01 | Agency Of Ind Science & Technol | 水用ピストンポンプ |
| JPS63126565U (fr) * | 1987-02-10 | 1988-08-18 |
-
1972
- 1972-05-18 JP JP4865872A patent/JPS535637B1/ja active Pending
- 1972-05-19 DE DE19722224468 patent/DE2224468A1/de active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2632093A1 (de) * | 1975-09-04 | 1977-03-17 | Ibm | Verfahren zum herstellen von durchgehenden bohrungen |
| DE2946011A1 (de) * | 1978-11-20 | 1980-06-04 | Mitsubishi Metal Corp | Verfahren zur herstellung eines optischen hohlleiters |
| DE3343704A1 (de) * | 1983-12-02 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum aetzen von lochrasterplatten, insbesondere fuer plasma-kathoden-display |
| DE3642073C1 (en) * | 1986-12-10 | 1988-02-04 | Heidenhain Gmbh Dr Johannes | Process for etching alkali glass layers by reactive plasma etching |
| WO2008052528A3 (fr) * | 2006-10-30 | 2008-07-03 | Fhr Anlagenbau Gmbh | Procédé et dispositif de structuration de composants par recours à un matériau à base d'oxyde de silicium |
| US8652341B2 (en) | 2006-10-30 | 2014-02-18 | Fhr Anlagenbau Gmbh | Method and apparatus for structuring components made of a material composed of silicon oxide |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS535637B1 (fr) | 1978-03-01 |
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